KR100717277B1 - 이미지 센서 및 그 형성 방법 - Google Patents

이미지 센서 및 그 형성 방법 Download PDF

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Publication number
KR100717277B1
KR100717277B1 KR1020050018763A KR20050018763A KR100717277B1 KR 100717277 B1 KR100717277 B1 KR 100717277B1 KR 1020050018763 A KR1020050018763 A KR 1020050018763A KR 20050018763 A KR20050018763 A KR 20050018763A KR 100717277 B1 KR100717277 B1 KR 100717277B1
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KR
South Korea
Prior art keywords
insulating layer
layer
upper mold
mold insulating
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050018763A
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English (en)
Korean (ko)
Other versions
KR20060097878A (ko
Inventor
홍종욱
이준택
Original Assignee
삼성전자주식회사
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Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050018763A priority Critical patent/KR100717277B1/ko
Priority to JP2006060320A priority patent/JP2006253680A/ja
Priority to US11/369,474 priority patent/US20060199295A1/en
Publication of KR20060097878A publication Critical patent/KR20060097878A/ko
Application granted granted Critical
Publication of KR100717277B1 publication Critical patent/KR100717277B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J27/00—Cooking-vessels
    • A47J27/002—Construction of cooking-vessels; Methods or processes of manufacturing specially adapted for cooking-vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J36/00—Parts, details or accessories of cooking-vessels
    • A47J36/02—Selection of specific materials, e.g. heavy bottoms with copper inlay or with insulating inlay
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/12—Cooking devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S220/00—Receptacles
    • Y10S220/912—Cookware, i.e. pots and pans

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Food Science & Technology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020050018763A 2005-03-07 2005-03-07 이미지 센서 및 그 형성 방법 Expired - Fee Related KR100717277B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020050018763A KR100717277B1 (ko) 2005-03-07 2005-03-07 이미지 센서 및 그 형성 방법
JP2006060320A JP2006253680A (ja) 2005-03-07 2006-03-06 イメージセンサー及びその形成方法
US11/369,474 US20060199295A1 (en) 2005-03-07 2006-03-07 Image sensor and methods of forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050018763A KR100717277B1 (ko) 2005-03-07 2005-03-07 이미지 센서 및 그 형성 방법

Publications (2)

Publication Number Publication Date
KR20060097878A KR20060097878A (ko) 2006-09-18
KR100717277B1 true KR100717277B1 (ko) 2007-05-15

Family

ID=36944585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050018763A Expired - Fee Related KR100717277B1 (ko) 2005-03-07 2005-03-07 이미지 센서 및 그 형성 방법

Country Status (3)

Country Link
US (1) US20060199295A1 (enExample)
JP (1) JP2006253680A (enExample)
KR (1) KR100717277B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5092379B2 (ja) * 2006-12-07 2012-12-05 ソニー株式会社 固体撮像装置及びその製造方法並びに撮像装置
KR100913326B1 (ko) * 2007-11-19 2009-08-20 주식회사 동부하이텍 이미지 센서 및 그의 제조 방법
KR100935757B1 (ko) * 2007-12-24 2010-01-06 주식회사 동부하이텍 씨모스 이미지 센서 소자의 제조 방법
KR101463609B1 (ko) 2008-02-15 2014-11-21 삼성전자 주식회사 이미지 센서 및 그 제조 방법
US8018014B2 (en) * 2008-05-29 2011-09-13 Oki Semiconductor Co., Ltd. Semiconductor device
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
US20100163759A1 (en) * 2008-12-31 2010-07-01 Stmicroelectronics S.R.L. Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
US9287308B2 (en) 2013-04-08 2016-03-15 Omnivision Technologies, Inc. Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
EP3506356B1 (en) * 2017-12-28 2023-07-12 IMEC vzw Method for producing an image sensor, and image sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306897A (ja) * 1995-05-09 1996-11-22 Matsushita Electron Corp 固体撮像装置
KR20040058687A (ko) * 2002-12-27 2004-07-05 주식회사 하이닉스반도체 포토다이오드 주위에 광 집속층을 구비한 시모스 이미지센서
KR20040065963A (ko) * 2003-01-16 2004-07-23 삼성전자주식회사 이미지 소자 및 그 제조 방법
KR20040106229A (ko) * 2003-06-11 2004-12-17 소니 가부시끼 가이샤 고체 촬상 소자

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103616A (en) * 1998-08-19 2000-08-15 Advanced Micro Devices, Inc. Method to manufacture dual damascene structures by utilizing short resist spacers
JP4050631B2 (ja) * 2003-02-21 2008-02-20 株式会社ルネサステクノロジ 電子デバイスの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306897A (ja) * 1995-05-09 1996-11-22 Matsushita Electron Corp 固体撮像装置
KR20040058687A (ko) * 2002-12-27 2004-07-05 주식회사 하이닉스반도체 포토다이오드 주위에 광 집속층을 구비한 시모스 이미지센서
KR20040065963A (ko) * 2003-01-16 2004-07-23 삼성전자주식회사 이미지 소자 및 그 제조 방법
KR20040106229A (ko) * 2003-06-11 2004-12-17 소니 가부시끼 가이샤 고체 촬상 소자

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Publication number Publication date
JP2006253680A (ja) 2006-09-21
KR20060097878A (ko) 2006-09-18
US20060199295A1 (en) 2006-09-07

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