JP2004207476A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004207476A5 JP2004207476A5 JP2002374582A JP2002374582A JP2004207476A5 JP 2004207476 A5 JP2004207476 A5 JP 2004207476A5 JP 2002374582 A JP2002374582 A JP 2002374582A JP 2002374582 A JP2002374582 A JP 2002374582A JP 2004207476 A5 JP2004207476 A5 JP 2004207476A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002374582A JP3931138B2 (ja) | 2002-12-25 | 2002-12-25 | 電力用半導体装置及び電力用半導体装置の製造方法 |
| TW092113021A TWI225711B (en) | 2002-12-25 | 2003-05-14 | Power semiconductor device and method of manufacturing same |
| US10/437,062 US6927455B2 (en) | 2002-12-25 | 2003-05-14 | Power semiconductor device having semiconductor-layer-forming position controlled by ion implantation without using photoresist pattern, and method of manufacturing such power semiconductor device |
| KR10-2003-0033760A KR100498661B1 (ko) | 2002-12-25 | 2003-05-27 | 전력용 반도체 장치 및 전력용 반도체 장치의 제조 방법 |
| EP03019304A EP1434273B1 (en) | 2002-12-25 | 2003-08-26 | Power semiconductor device and method of manufacturing same |
| CNB031577415A CN1277317C (zh) | 2002-12-25 | 2003-08-27 | 功率半导体装置及功率半导体装置的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002374582A JP3931138B2 (ja) | 2002-12-25 | 2002-12-25 | 電力用半導体装置及び電力用半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004207476A JP2004207476A (ja) | 2004-07-22 |
| JP2004207476A5 true JP2004207476A5 (ja) | 2005-07-21 |
| JP3931138B2 JP3931138B2 (ja) | 2007-06-13 |
Family
ID=32463541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002374582A Expired - Lifetime JP3931138B2 (ja) | 2002-12-25 | 2002-12-25 | 電力用半導体装置及び電力用半導体装置の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6927455B2 (ja) |
| EP (1) | EP1434273B1 (ja) |
| JP (1) | JP3931138B2 (ja) |
| KR (1) | KR100498661B1 (ja) |
| CN (1) | CN1277317C (ja) |
| TW (1) | TWI225711B (ja) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8080459B2 (en) * | 2002-09-24 | 2011-12-20 | Vishay-Siliconix | Self aligned contact in a semiconductor device and method of fabricating the same |
| US8629019B2 (en) | 2002-09-24 | 2014-01-14 | Vishay-Siliconix | Method of forming self aligned contacts for a power MOSFET |
| JP2007142138A (ja) * | 2005-11-18 | 2007-06-07 | Mitsubishi Electric Corp | 半導体装置 |
| US7544545B2 (en) | 2005-12-28 | 2009-06-09 | Vishay-Siliconix | Trench polysilicon diode |
| WO2007084688A1 (en) * | 2006-01-18 | 2007-07-26 | Vishay-Siliconix | Floating gate structure with high electrostatic discharge performance |
| JP5196766B2 (ja) * | 2006-11-20 | 2013-05-15 | 株式会社東芝 | 半導体装置 |
| US9437729B2 (en) | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
| US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
| JP5502468B2 (ja) * | 2007-04-27 | 2014-05-28 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
| JP5443978B2 (ja) * | 2007-04-27 | 2014-03-19 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| US7750430B2 (en) * | 2007-10-31 | 2010-07-06 | Hynix Semiconductor Inc. | Semiconductor device and method for fabricating the same |
| EP2081233A1 (de) * | 2007-12-21 | 2009-07-22 | SEMIKRON Elektronik GmbH & Co. KG | Leistungsdiode mit grabenförmigen Anodenkontaktbereich |
| US10600902B2 (en) | 2008-02-13 | 2020-03-24 | Vishay SIliconix, LLC | Self-repairing field effect transisitor |
| US9443974B2 (en) * | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
| US9230810B2 (en) | 2009-09-03 | 2016-01-05 | Vishay-Siliconix | System and method for substrate wafer back side and edge cross section seals |
| US9431530B2 (en) | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
| TWI505464B (zh) * | 2009-12-03 | 2015-10-21 | Excelliance Mos Corp | 功率金氧半導體場效電晶體及其製造方法 |
| WO2011117285A1 (en) * | 2010-03-23 | 2011-09-29 | Abb Technology Ag | Power semiconductor device |
| JP5656608B2 (ja) * | 2010-12-17 | 2015-01-21 | 三菱電機株式会社 | 半導体装置 |
| US8482029B2 (en) * | 2011-05-27 | 2013-07-09 | Infineon Technologies Austria Ag | Semiconductor device and integrated circuit including the semiconductor device |
| US8377756B1 (en) | 2011-07-26 | 2013-02-19 | General Electric Company | Silicon-carbide MOSFET cell structure and method for forming same |
| CN102522328B (zh) * | 2011-12-30 | 2014-01-29 | 江苏宏微科技有限公司 | Mos器件栅极孔的制作方法 |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| EP3183753A4 (en) | 2014-08-19 | 2018-01-10 | Vishay-Siliconix | Electronic circuit |
| US9882044B2 (en) | 2014-08-19 | 2018-01-30 | Vishay-Siliconix | Edge termination for super-junction MOSFETs |
| JP6534813B2 (ja) * | 2015-01-08 | 2019-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| CN105280538B (zh) * | 2015-09-18 | 2018-01-30 | 江苏中科君芯科技有限公司 | 能实现背面精细化光刻的igbt背面制作方法 |
| CN105225996B (zh) * | 2015-09-18 | 2017-12-12 | 江苏中科君芯科技有限公司 | 具有内置二极管的igbt器件背面工艺 |
| JP6438175B1 (ja) * | 2017-08-31 | 2018-12-12 | 新電元工業株式会社 | 半導体装置 |
| JP7186732B2 (ja) * | 2018-02-08 | 2022-12-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4135955A (en) * | 1977-09-21 | 1979-01-23 | Harris Corporation | Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation |
| JPS58100460A (ja) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | 縦形ｍｏｓ半導体装置 |
| JPS59213168A (ja) * | 1983-05-19 | 1984-12-03 | Nec Corp | 縦型電界効果トランジスタの製造方法 |
| US5283201A (en) * | 1988-05-17 | 1994-02-01 | Advanced Power Technology, Inc. | High density power device fabrication process |
| US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
| JP2753011B2 (ja) * | 1989-01-13 | 1998-05-18 | 株式会社東芝 | 高耐圧プレーナ型半導体素子およびその製造方法 |
| JP2837033B2 (ja) * | 1992-07-21 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| DE4300806C1 (de) * | 1993-01-14 | 1993-12-23 | Siemens Ag | Verfahren zur Herstellung von vertikalen MOS-Transistoren |
| JP2987040B2 (ja) * | 1993-11-05 | 1999-12-06 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
| JPH08306937A (ja) * | 1995-04-28 | 1996-11-22 | Fuji Electric Co Ltd | 高耐圧半導体装置 |
| US5684319A (en) * | 1995-08-24 | 1997-11-04 | National Semiconductor Corporation | Self-aligned source and body contact structure for high performance DMOS transistors and method of fabricating same |
| JP3206727B2 (ja) * | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法 |
| US6285058B1 (en) | 1997-08-29 | 2001-09-04 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of manufacturing the same |
| FR2767964B1 (fr) * | 1997-09-04 | 2001-06-08 | St Microelectronics Sa | Procede de realisation de la zone de canal d'un transistor dmos |
| US6404025B1 (en) * | 1997-10-02 | 2002-06-11 | Magepower Semiconductor Corp. | MOSFET power device manufactured with reduced number of masks by fabrication simplified processes |
| JP3933811B2 (ja) * | 1999-03-25 | 2007-06-20 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US6188105B1 (en) * | 1999-04-01 | 2001-02-13 | Intersil Corporation | High density MOS-gated power device and process for forming same |
| US6433396B1 (en) * | 1999-10-05 | 2002-08-13 | International Rectifier Corporation | Trench MOSFET with integrated schottky device and process for its manufacture |
| JP4608133B2 (ja) * | 2001-06-08 | 2011-01-05 | ルネサスエレクトロニクス株式会社 | 縦型ｍｏｓｆｅｔを備えた半導体装置およびその製造方法 |
-
2002
- 2002-12-25 JP JP2002374582A patent/JP3931138B2/ja not_active Expired - Lifetime
-
2003
- 2003-05-14 US US10/437,062 patent/US6927455B2/en not_active Expired - Lifetime
- 2003-05-14 TW TW092113021A patent/TWI225711B/zh not_active IP Right Cessation
- 2003-05-27 KR KR10-2003-0033760A patent/KR100498661B1/ko active IP Right Grant
- 2003-08-26 EP EP03019304A patent/EP1434273B1/en not_active Expired - Lifetime
- 2003-08-27 CN CNB031577415A patent/CN1277317C/zh not_active Expired - Lifetime