JP2004172620A - エアギャップを有する集積回路及びその製作方法 - Google Patents

エアギャップを有する集積回路及びその製作方法 Download PDF

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Publication number
JP2004172620A
JP2004172620A JP2003385281A JP2003385281A JP2004172620A JP 2004172620 A JP2004172620 A JP 2004172620A JP 2003385281 A JP2003385281 A JP 2003385281A JP 2003385281 A JP2003385281 A JP 2003385281A JP 2004172620 A JP2004172620 A JP 2004172620A
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JP
Japan
Prior art keywords
metal pattern
integrated circuit
dielectric layer
metal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003385281A
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English (en)
Japanese (ja)
Inventor
Katetsu Ro
火 鐵 盧
Daii Ri
大 爲 李
Kuang-Chih Wang
光 誌 王
Ming-Sheng Yang
名 聲 楊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32719000&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2004172620(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US10/295,080 external-priority patent/US7138329B2/en
Priority claimed from US10/295,719 external-priority patent/US7449407B2/en
Priority claimed from US10/295,062 external-priority patent/US6917109B2/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Publication of JP2004172620A publication Critical patent/JP2004172620A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003385281A 2002-11-15 2003-11-14 エアギャップを有する集積回路及びその製作方法 Pending JP2004172620A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/295,080 US7138329B2 (en) 2002-11-15 2002-11-15 Air gap for tungsten/aluminum plug applications
US10/295,719 US7449407B2 (en) 2002-11-15 2002-11-15 Air gap for dual damascene applications
US10/295,062 US6917109B2 (en) 2002-11-15 2002-11-15 Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device

Publications (1)

Publication Number Publication Date
JP2004172620A true JP2004172620A (ja) 2004-06-17

Family

ID=32719000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003385281A Pending JP2004172620A (ja) 2002-11-15 2003-11-14 エアギャップを有する集積回路及びその製作方法

Country Status (3)

Country Link
JP (1) JP2004172620A (zh)
CN (1) CN100372113C (zh)
TW (1) TWI232496B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006511955A (ja) * 2002-12-20 2006-04-06 フリースケール セミコンダクター インコーポレイテッド 半導体装置の形成方法およびその構造
JP2007088439A (ja) * 2005-08-19 2007-04-05 Infineon Technologies Ag 導体トラック配列およびその製造方法
JP2009094519A (ja) * 2007-10-09 2009-04-30 Applied Materials Inc Ｒｃ遅延を減少するために誘電体層にエアギャップを生成する方法及び装置
JP2012114483A (ja) * 2012-03-23 2012-06-14 Fujitsu Ltd 半導体装置及びその製造方法
JP2013522929A (ja) * 2010-03-24 2013-06-13 インターナショナル・ビジネス・マシーンズ・コーポレーション ３次元集積のための裏側ダミー・プラグを含む半導体構造およびこれを製造する方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080265377A1 (en) * 2007-04-30 2008-10-30 International Business Machines Corporation Air gap with selective pinchoff using an anti-nucleation layer
US8436473B2 (en) * 2009-05-06 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits including air gaps around interconnect structures, and fabrication methods thereof
CN102891100B (zh) * 2011-07-22 2015-04-29 中芯国际集成电路制造(上海)有限公司 浅槽隔离结构及其形成方法
CN102376684B (zh) * 2011-11-25 2016-04-06 上海集成电路研发中心有限公司 铜互连结构及其制作方法
CN104425230A (zh) * 2013-09-09 2015-03-18 中芯国际集成电路制造(上海)有限公司 侧墙结构及其形成方法
CN104362172B (zh) * 2014-10-15 2018-09-11 杰华特微电子（杭州）有限公司 具有终端环的半导体芯片结构及其制造方法
US9653348B1 (en) * 2015-12-30 2017-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10896888B2 (en) * 2018-03-15 2021-01-19 Microchip Technology Incorporated Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond
US10818541B2 (en) 2018-12-27 2020-10-27 Nanya Technology Corporation Semiconductor structure
US11309263B2 (en) * 2020-05-11 2022-04-19 Nanya Technology Corporation Semiconductor device structure with air gap structure and method for preparing the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03204960A (ja) * 1989-04-21 1991-09-06 Nec Corp 半導体装置およびその製造方法
JPH04245665A (ja) * 1990-09-12 1992-09-02 Gec Marconi Ltd 半導体集積回路構造
JPH0745701A (ja) * 1993-07-27 1995-02-14 Nec Corp 半導体装置及びその製造方法
JPH07326670A (ja) * 1994-05-31 1995-12-12 Texas Instr Inc <Ti> 半導体集積回路装置
JPH08148556A (ja) * 1994-11-16 1996-06-07 Sony Corp 半導体装置およびその製造方法
JP2000058549A (ja) * 1998-08-04 2000-02-25 Nec Corp 集積回路配線の形成方法
JP2000269327A (ja) * 1999-03-15 2000-09-29 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1204867A (zh) * 1997-06-20 1999-01-13 日本电气株式会社 半导体器件及其制造方法
US6184121B1 (en) * 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US6413852B1 (en) * 2000-08-31 2002-07-02 International Business Machines Corporation Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03204960A (ja) * 1989-04-21 1991-09-06 Nec Corp 半導体装置およびその製造方法
JPH04245665A (ja) * 1990-09-12 1992-09-02 Gec Marconi Ltd 半導体集積回路構造
JPH0745701A (ja) * 1993-07-27 1995-02-14 Nec Corp 半導体装置及びその製造方法
JPH07326670A (ja) * 1994-05-31 1995-12-12 Texas Instr Inc <Ti> 半導体集積回路装置
JPH08148556A (ja) * 1994-11-16 1996-06-07 Sony Corp 半導体装置およびその製造方法
JP2000058549A (ja) * 1998-08-04 2000-02-25 Nec Corp 集積回路配線の形成方法
JP2000269327A (ja) * 1999-03-15 2000-09-29 Toshiba Corp 半導体装置およびその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006511955A (ja) * 2002-12-20 2006-04-06 フリースケール セミコンダクター インコーポレイテッド 半導体装置の形成方法およびその構造
JP2006324689A (ja) * 2002-12-20 2006-11-30 Freescale Semiconductor Inc 半導体装置の形成方法およびその構造
JP4799868B2 (ja) * 2002-12-20 2011-10-26 フリースケール セミコンダクター インコーポレイテッド 半導体装置の形成方法およびその構造
JP2007088439A (ja) * 2005-08-19 2007-04-05 Infineon Technologies Ag 導体トラック配列およびその製造方法
JP2011129939A (ja) * 2005-08-19 2011-06-30 Infineon Technologies Ag 導体トラック配列の製造方法
JP2009094519A (ja) * 2007-10-09 2009-04-30 Applied Materials Inc Ｒｃ遅延を減少するために誘電体層にエアギャップを生成する方法及び装置
JP2013522929A (ja) * 2010-03-24 2013-06-13 インターナショナル・ビジネス・マシーンズ・コーポレーション ３次元集積のための裏側ダミー・プラグを含む半導体構造およびこれを製造する方法
JP2012114483A (ja) * 2012-03-23 2012-06-14 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN100372113C (zh) 2008-02-27
TW200415704A (en) 2004-08-16
TWI232496B (en) 2005-05-11
CN1501492A (zh) 2004-06-02

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