JP2004156141A5 - - Google Patents

Download PDF

Info

Publication number
JP2004156141A5
JP2004156141A5 JP2003375645A JP2003375645A JP2004156141A5 JP 2004156141 A5 JP2004156141 A5 JP 2004156141A5 JP 2003375645 A JP2003375645 A JP 2003375645A JP 2003375645 A JP2003375645 A JP 2003375645A JP 2004156141 A5 JP2004156141 A5 JP 2004156141A5
Authority
JP
Japan
Prior art keywords
metal
containing precursor
compound
halogen
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003375645A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004156141A (ja
JP4113099B2 (ja
Filing date
Publication date
Priority claimed from US10/324,781 external-priority patent/US6869876B2/en
Application filed filed Critical
Publication of JP2004156141A publication Critical patent/JP2004156141A/ja
Publication of JP2004156141A5 publication Critical patent/JP2004156141A5/ja
Application granted granted Critical
Publication of JP4113099B2 publication Critical patent/JP4113099B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003375645A 2002-11-05 2003-11-05 半導体基板の表面に金属層を堆積する方法 Expired - Fee Related JP4113099B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28790302A 2002-11-05 2002-11-05
US10/324,781 US6869876B2 (en) 2002-11-05 2002-12-20 Process for atomic layer deposition of metal films

Publications (3)

Publication Number Publication Date
JP2004156141A JP2004156141A (ja) 2004-06-03
JP2004156141A5 true JP2004156141A5 (https=) 2005-05-26
JP4113099B2 JP4113099B2 (ja) 2008-07-02

Family

ID=32314358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003375645A Expired - Fee Related JP4113099B2 (ja) 2002-11-05 2003-11-05 半導体基板の表面に金属層を堆積する方法

Country Status (7)

Country Link
US (1) US6869876B2 (https=)
EP (1) EP1426463B1 (https=)
JP (1) JP4113099B2 (https=)
KR (1) KR100639640B1 (https=)
AT (1) ATE381628T1 (https=)
DE (1) DE60318173T2 (https=)
TW (1) TWI240970B (https=)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6989172B2 (en) * 2003-01-27 2006-01-24 Micell Technologies, Inc. Method of coating microelectronic substrates
US7205960B2 (en) 2003-02-19 2007-04-17 Mirage Innovations Ltd. Chromatic planar optic display system
US7534967B2 (en) * 2003-02-25 2009-05-19 University Of North Texas Conductor structures including penetrable materials
US6951813B2 (en) * 2003-04-04 2005-10-04 Micron Technology, Inc. Methods of forming metal-containing layers including a metal bonded to halogens and trialkylaluminum
US7311946B2 (en) 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
US7067407B2 (en) * 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
KR100528069B1 (ko) * 2003-09-02 2005-11-15 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
US7312163B2 (en) * 2003-09-24 2007-12-25 Micron Technology, Inc. Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
US20050085031A1 (en) * 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
US7419702B2 (en) * 2004-03-31 2008-09-02 Tokyo Electron Limited Method for processing a substrate
JP2008502142A (ja) * 2004-06-04 2008-01-24 インターナショナル・ビジネス・マシーンズ・コーポレーション 相互接続構造の製造方法
KR100602087B1 (ko) * 2004-07-09 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7294851B2 (en) 2004-11-03 2007-11-13 Infineon Technologies Ag Dense seed layer and method of formation
US7034169B1 (en) 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7573640B2 (en) * 2005-04-04 2009-08-11 Mirage Innovations Ltd. Multi-plane optical apparatus
JP4813480B2 (ja) * 2005-06-13 2011-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7314828B2 (en) * 2005-07-19 2008-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Repairing method for low-k dielectric materials
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US20080043334A1 (en) * 2006-08-18 2008-02-21 Mirage Innovations Ltd. Diffractive optical relay and method for manufacturing the same
EP1932050A2 (en) * 2005-09-14 2008-06-18 Mirage Innovations Ltd. Diffractive optical device and system
EP1942364A1 (en) 2005-09-14 2008-07-09 Mirage Innovations Ltd. Diffractive optical relay and method for manufacturing the same
ATE422679T1 (de) * 2005-11-03 2009-02-15 Mirage Innovations Ltd Binokulare optische relaiseinrichtung
JP4975414B2 (ja) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
US20100177388A1 (en) * 2006-08-23 2010-07-15 Mirage Innovations Ltd. Diffractive optical relay device with improved color uniformity
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
KR100807216B1 (ko) * 2006-09-29 2008-02-28 삼성전자주식회사 두께 균일성을 향상할 수 있는 박막 형성 장치 및 방법
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7638170B2 (en) * 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US20100302644A1 (en) * 2007-09-18 2010-12-02 Mirage Innovations Ltd Slanted optical device
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US9157150B2 (en) * 2007-12-04 2015-10-13 Cypress Semiconductor Corporation Method of operating a processing chamber used in forming electronic devices
DE102007058571B4 (de) * 2007-12-05 2012-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens
US8993051B2 (en) 2007-12-12 2015-03-31 Technische Universiteit Delft Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle
US7655564B2 (en) * 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
KR20090067505A (ko) * 2007-12-21 2009-06-25 에이에스엠지니텍코리아 주식회사 루테늄막 증착 방법
US7799674B2 (en) * 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
JP5384291B2 (ja) 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8557702B2 (en) * 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
US8329569B2 (en) * 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
CN103118806B (zh) * 2010-07-06 2016-10-12 埃托特克德国有限公司 处理金属表面的方法和由此形成的器件
US20120070981A1 (en) * 2010-09-17 2012-03-22 Clendenning Scott B Atomic layer deposition of a copper-containing seed layer
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US9005705B2 (en) * 2011-09-14 2015-04-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method
US10036089B2 (en) * 2013-06-26 2018-07-31 Applied Materials, Inc. Methods of depositing a metal alloy film
TWI647223B (zh) * 2013-06-28 2019-01-11 韋恩州立大學 作爲用於在基材上形成層之還原劑的雙（三甲矽基）六員環系統及相關化合物
JP6147693B2 (ja) * 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
TWI784036B (zh) * 2017-08-30 2022-11-21 荷蘭商Ａｓｍ智慧財產控股公司 層形成方法
KR102103346B1 (ko) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법.
US11505865B2 (en) * 2018-07-12 2022-11-22 Basf Se Process for the generation of metal- or semimetal-containing films
CN109273402B (zh) * 2018-09-13 2020-08-25 德淮半导体有限公司 金属阻挡层的制作方法、金属互连结构及其制作方法
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
JP2020132904A (ja) * 2019-02-13 2020-08-31 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착
CN112652677B (zh) * 2020-12-09 2023-10-27 晋能光伏技术有限责任公司 一种perc电池背面钝化工艺
JP7112768B2 (ja) * 2020-12-23 2022-08-04 株式会社クリエイティブコーティングス 金属膜のａｌｄ装置
US12031209B2 (en) * 2021-02-16 2024-07-09 Applied Materials, Inc. Reducing agents for atomic layer deposition
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
US20230002888A1 (en) * 2021-07-01 2023-01-05 Applied Materials, Inc. Method of depositing metal films
US12234548B2 (en) 2022-02-03 2025-02-25 Asm Ip Holding B.V. Methods of forming copper iodide layer and structures including copper iodide layer
US20230317634A1 (en) * 2022-04-05 2023-10-05 Applied Materials, Inc. Coatings with diffusion barriers for corrosion and contamination protection
US20230386759A1 (en) * 2022-05-31 2023-11-30 President And Fellows Of Harvard College Methods of vapor deposition of metal halides
KR20260039744A (ko) * 2023-07-14 2026-03-20 램 리써치 코포레이션 할로겐-함유 활성제 분자를 이용한 금속-함유 막의 증착

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482262B1 (en) * 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US5306666A (en) * 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
JP5016767B2 (ja) 2000-03-07 2012-09-05 エーエスエム インターナショナル エヌ．ヴェー． 傾斜薄膜の形成方法
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
WO2001088972A1 (en) 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
US6368954B1 (en) 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via

Similar Documents

Publication Publication Date Title
JP2004156141A5 (https=)
US7985449B2 (en) Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes
US6869876B2 (en) Process for atomic layer deposition of metal films
JP3593051B2 (ja) 金属及び金属含有フィルムの堆積のための揮発性先駆物質
EP0533070B1 (en) Volatile precursors for copper CVD
JP5735593B2 (ja) 気相成長を介して連続的な銅薄膜を形成する方法
JP2006516031A5 (https=)
JP4414397B2 (ja) 揮発性金属β−ケトイミナート錯体
JP2005171291A (ja) チタン含有薄膜およびその製造方法
TW499497B (en) Organocopper precursors for chemical vapor deposition and a method of depositing copper on a substrate using said precursors
JPH09235287A (ja) 金属錯体及び金属薄膜形成方法
JP4261417B2 (ja) 拡散バリア層表面に金属膜を形成する方法
JP3230389B2 (ja) 銅薄膜形成用有機銅化合物とそれを用いた銅薄膜選択成長法
JP4218247B2 (ja) 銅（ＩＩ）のβ−ジケトネート錯体を含む有機金属化学蒸着法用溶液原料
EP2014790A1 (en) Process for forming continuous copper thin films via vapor deposition
JP3894010B2 (ja) チタン錯体を含む有機金属化学蒸着法用溶液原料及び該原料を用いたチタン含有薄膜の製造方法
JPH0853468A (ja) 蒸気圧の高い有機金属化学蒸着による銅薄膜形成用有機銅化合物
CN100393727C (zh) 挥发性金属β-酮亚胺盐配合物
JP2003252823A (ja) 有機金属化学蒸着法用有機銅化合物及びそれを用いて作製した銅薄膜
JP2001114789A (ja) 有機金属化学蒸着用有機銅化合物及びこれを含む銅薄膜形成用溶液原料並びにこれから作られた銅薄膜