JP2004134731A5 - - Google Patents

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Publication number
JP2004134731A5
JP2004134731A5 JP2003128286A JP2003128286A JP2004134731A5 JP 2004134731 A5 JP2004134731 A5 JP 2004134731A5 JP 2003128286 A JP2003128286 A JP 2003128286A JP 2003128286 A JP2003128286 A JP 2003128286A JP 2004134731 A5 JP2004134731 A5 JP 2004134731A5
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JP
Japan
Prior art keywords
temperature
heated
substrate
heating
reactor
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Application number
JP2003128286A
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English (en)
Japanese (ja)
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JP2004134731A (ja
JP5054275B2 (ja
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Priority claimed from US10/141,517 external-priority patent/US6843201B2/en
Priority claimed from US10/410,699 external-priority patent/US7427329B2/en
Application filed filed Critical
Publication of JP2004134731A publication Critical patent/JP2004134731A/ja
Publication of JP2004134731A5 publication Critical patent/JP2004134731A5/ja
Application granted granted Critical
Publication of JP5054275B2 publication Critical patent/JP5054275B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003128286A 2002-05-08 2003-05-06 枚葉式半導体基板処理リアクタの温度制御 Expired - Lifetime JP5054275B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/141517 2002-05-08
US10/141,517 US6843201B2 (en) 2002-05-08 2002-05-08 Temperature control for single substrate semiconductor processing reactor
US10/410699 2003-04-08
US10/410,699 US7427329B2 (en) 2002-05-08 2003-04-08 Temperature control for single substrate semiconductor processing reactor

Publications (3)

Publication Number Publication Date
JP2004134731A JP2004134731A (ja) 2004-04-30
JP2004134731A5 true JP2004134731A5 (enExample) 2006-02-16
JP5054275B2 JP5054275B2 (ja) 2012-10-24

Family

ID=32302116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003128286A Expired - Lifetime JP5054275B2 (ja) 2002-05-08 2003-05-06 枚葉式半導体基板処理リアクタの温度制御

Country Status (2)

Country Link
US (1) US7427329B2 (enExample)
JP (1) JP5054275B2 (enExample)

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CN113878773B (zh) * 2021-10-22 2022-08-09 中国原子能科学研究院 树脂基中子屏蔽材料及其制备方法
CN115505897B (zh) * 2022-09-22 2023-10-31 江苏第三代半导体研究院有限公司 一种用于制备外延片的转盘式反应器、制备方法及用途
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