JP5054275B2 - 枚葉式半導体基板処理リアクタの温度制御 - Google Patents

枚葉式半導体基板処理リアクタの温度制御 Download PDF

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Publication number
JP5054275B2
JP5054275B2 JP2003128286A JP2003128286A JP5054275B2 JP 5054275 B2 JP5054275 B2 JP 5054275B2 JP 2003128286 A JP2003128286 A JP 2003128286A JP 2003128286 A JP2003128286 A JP 2003128286A JP 5054275 B2 JP5054275 B2 JP 5054275B2
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substrate
reactor
temperature gradient
heating
wafer
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Japanese (ja)
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JP2004134731A5 (enExample
JP2004134731A (ja
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クズネトソフ フラジミール
ハー．アー．グランネマン エルンスト
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ASM International NV
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ASM International NV
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2003128286A 2002-05-08 2003-05-06 枚葉式半導体基板処理リアクタの温度制御 Expired - Lifetime JP5054275B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/141,517 US6843201B2 (en) 2002-05-08 2002-05-08 Temperature control for single substrate semiconductor processing reactor
US10/141517 2002-05-08
US10/410,699 US7427329B2 (en) 2002-05-08 2003-04-08 Temperature control for single substrate semiconductor processing reactor
US10/410699 2003-04-08

Publications (3)

Publication Number Publication Date
JP2004134731A JP2004134731A (ja) 2004-04-30
JP2004134731A5 JP2004134731A5 (enExample) 2006-02-16
JP5054275B2 true JP5054275B2 (ja) 2012-10-24

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JP2003128286A Expired - Lifetime JP5054275B2 (ja) 2002-05-08 2003-05-06 枚葉式半導体基板処理リアクタの温度制御

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Country Link
US (1) US7427329B2 (enExample)
JP (1) JP5054275B2 (enExample)

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US7217670B2 (en) * 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
US20070125303A1 (en) * 2005-12-02 2007-06-07 Ward Ruby High-throughput deposition system for oxide thin film growth by reactive coevaportation
JP5228495B2 (ja) 2008-01-11 2013-07-03 富士通セミコンダクター株式会社 半導体装置の製造方法
US8002463B2 (en) * 2008-06-13 2011-08-23 Asm International N.V. Method and device for determining the temperature of a substrate
TW201017790A (en) * 2008-10-17 2010-05-01 Inotera Memories Inc A furnace temperature flip method for thermal budget balance and minimum electric parameter variation
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US20110097491A1 (en) * 2009-10-27 2011-04-28 Levy David H Conveyance system including opposed fluid distribution manifolds
CN102543662B (zh) * 2010-12-30 2016-02-03 上海微电子装备有限公司 热盘及应用其的硅片加热系统
JP5645718B2 (ja) * 2011-03-07 2014-12-24 東京エレクトロン株式会社 熱処理装置
KR101810046B1 (ko) 2012-01-19 2017-12-19 삼성디스플레이 주식회사 기상 증착 장치 및 기상 증착 방법
KR102669753B1 (ko) * 2014-01-21 2024-05-28 카티바, 인크. 전자 장치 인캡슐레이션을 위한 기기 및 기술
WO2015194675A1 (ja) * 2014-06-18 2015-12-23 東京エレクトロン株式会社 加熱装置、加熱方法、温度調整機構及び半導体製造装置
JP6382151B2 (ja) * 2014-09-25 2018-08-29 東京エレクトロン株式会社 基板熱処理装置、基板熱処理方法、記録媒体及び熱処理状態検知装置
KR102350554B1 (ko) * 2015-05-29 2022-01-17 세메스 주식회사 웨이퍼 가열 장치
JP7008602B2 (ja) * 2018-09-27 2022-01-25 東京エレクトロン株式会社 成膜装置および温度制御方法
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CN115516657A (zh) * 2020-01-22 2022-12-23 应用材料公司 Oled层厚度和掺杂剂浓度的产线内监测
KR102359376B1 (ko) * 2020-06-03 2022-02-08 한국고요써모시스템(주) 기판의 열처리 오븐
CN111705302B (zh) * 2020-08-18 2020-11-10 上海陛通半导体能源科技股份有限公司 可实现晶圆平稳升降的气相沉积设备
CN113878773B (zh) * 2021-10-22 2022-08-09 中国原子能科学研究院 树脂基中子屏蔽材料及其制备方法
CN115505897B (zh) * 2022-09-22 2023-10-31 江苏第三代半导体研究院有限公司 一种用于制备外延片的转盘式反应器、制备方法及用途
CN117524930B (zh) * 2023-11-07 2025-05-06 拓荆创益(沈阳)半导体设备有限公司 一种半导体腔室双加热盘的温度控制系统和方法

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Publication number Publication date
US20030209200A1 (en) 2003-11-13
US7427329B2 (en) 2008-09-23
JP2004134731A (ja) 2004-04-30

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