JP2004128357A - 電極配設基体及びその電極接合方法 - Google Patents

電極配設基体及びその電極接合方法 Download PDF

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Publication number
JP2004128357A
JP2004128357A JP2002292868A JP2002292868A JP2004128357A JP 2004128357 A JP2004128357 A JP 2004128357A JP 2002292868 A JP2002292868 A JP 2002292868A JP 2002292868 A JP2002292868 A JP 2002292868A JP 2004128357 A JP2004128357 A JP 2004128357A
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Japan
Prior art keywords
electrode
bonding
base
composite metal
organic substance
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Pending
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JP2002292868A
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English (en)
Japanese (ja)
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JP2004128357A5 (enExample
Inventor
Yusuke Chikamori
近森　祐介
Kaori Mikojima
神子島　かおり
Naoaki Kogure
小榑　直明
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Ebara Corp
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Ebara Corp
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Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2002292868A priority Critical patent/JP2004128357A/ja
Priority to TW092125572A priority patent/TWI284581B/zh
Priority to DE60326760T priority patent/DE60326760D1/de
Priority to PCT/JP2003/011797 priority patent/WO2004026526A1/en
Priority to CNB038009056A priority patent/CN100337782C/zh
Priority to KR1020047000955A priority patent/KR20050040812A/ko
Priority to US10/484,454 priority patent/US20040245648A1/en
Priority to EP03788702A priority patent/EP1578559B1/en
Publication of JP2004128357A publication Critical patent/JP2004128357A/ja
Publication of JP2004128357A5 publication Critical patent/JP2004128357A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/8184—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83222—Induction heating, i.e. eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz

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JP2002292868A 2002-09-18 2002-10-04 電極配設基体及びその電極接合方法 Pending JP2004128357A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002292868A JP2004128357A (ja) 2002-10-04 2002-10-04 電極配設基体及びその電極接合方法
TW092125572A TWI284581B (en) 2002-09-18 2003-09-17 Bonding material and bonding method
DE60326760T DE60326760D1 (de) 2002-09-18 2003-09-17 Verfahren zum verbinden
PCT/JP2003/011797 WO2004026526A1 (en) 2002-09-18 2003-09-17 Bonding material and bonding method
CNB038009056A CN100337782C (zh) 2002-09-18 2003-09-17 接合材料
KR1020047000955A KR20050040812A (ko) 2002-09-18 2003-09-17 본딩물질 및 본딩방법
US10/484,454 US20040245648A1 (en) 2002-09-18 2003-09-17 Bonding material and bonding method
EP03788702A EP1578559B1 (en) 2002-09-18 2003-09-17 Bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002292868A JP2004128357A (ja) 2002-10-04 2002-10-04 電極配設基体及びその電極接合方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008002999A Division JP2008098683A (ja) 2008-01-10 2008-01-10 電極配設基体の電極接合方法

Publications (2)

Publication Number Publication Date
JP2004128357A true JP2004128357A (ja) 2004-04-22
JP2004128357A5 JP2004128357A5 (enExample) 2005-08-25

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JP2002292868A Pending JP2004128357A (ja) 2002-09-18 2002-10-04 電極配設基体及びその電極接合方法

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JP (1) JP2004128357A (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186748A (ja) * 2004-12-28 2006-07-13 Daishinku Corp 圧電振動デバイス
JP2006202944A (ja) * 2005-01-20 2006-08-03 Nissan Motor Co Ltd 接合方法及び接合構造
JP2006211089A (ja) * 2005-01-26 2006-08-10 Daishinku Corp 圧電振動デバイス
WO2007122925A1 (ja) 2006-04-24 2007-11-01 Murata Manufacturing Co., Ltd. 電子部品、それを用いた電子部品装置およびその製造方法
JP2007330980A (ja) * 2006-06-13 2007-12-27 Nissan Motor Co Ltd 接合方法
US7361590B2 (en) 2005-01-20 2008-04-22 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008195974A (ja) * 2007-02-08 2008-08-28 Toyota Motor Corp 接合方法
JP2008244242A (ja) * 2007-03-28 2008-10-09 Hitachi Ltd 半導体装置、その製造方法、複合金属体及びその製造方法
JP2008545257A (ja) * 2005-06-30 2008-12-11 インテル・コーポレーション エレクトロマイグレーション耐性を有し柔軟性のあるワイヤ相互接続、ナノサイズのはんだ組成、それらを形成するシステム、およびはんだ付けされたパッケージの組み立て方法
US7528485B2 (en) 2004-07-29 2009-05-05 Hitachi, Ltd. Semiconductor device, power converter device using it, and hybrid vehicle using the power converter device
WO2011114751A1 (ja) * 2010-03-19 2011-09-22 古河電気工業株式会社 導電接続部材、及び導電接続部材の作製方法
JP2013041870A (ja) * 2011-08-11 2013-02-28 Furukawa Electric Co Ltd:The 半導体装置
JP5182296B2 (ja) * 2008-02-07 2013-04-17 株式会社村田製作所 電子部品装置の製造方法
WO2014208690A1 (ja) 2013-06-28 2014-12-31 古河電気工業株式会社 接続構造体、及び半導体装置
JP2016178334A (ja) * 2016-06-09 2016-10-06 ローム株式会社 半導体装置およびその製造方法
KR101898647B1 (ko) * 2017-05-11 2018-09-14 서울과학기술대학교 산학협력단 은코팅 구리 호일을 이용한 접합 소재 및 이를 이용한 접합 방법
JP2018206840A (ja) * 2017-05-31 2018-12-27 株式会社応用ナノ粒子研究所 放熱構造体
JP2021072304A (ja) * 2019-10-29 2021-05-06 ミクロン電気株式会社 Ｐｔｃサーミスタの接合方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528485B2 (en) 2004-07-29 2009-05-05 Hitachi, Ltd. Semiconductor device, power converter device using it, and hybrid vehicle using the power converter device
JP2006186748A (ja) * 2004-12-28 2006-07-13 Daishinku Corp 圧電振動デバイス
JP2006202944A (ja) * 2005-01-20 2006-08-03 Nissan Motor Co Ltd 接合方法及び接合構造
US7361590B2 (en) 2005-01-20 2008-04-22 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
JP2006211089A (ja) * 2005-01-26 2006-08-10 Daishinku Corp 圧電振動デバイス
JP2008545257A (ja) * 2005-06-30 2008-12-11 インテル・コーポレーション エレクトロマイグレーション耐性を有し柔軟性のあるワイヤ相互接続、ナノサイズのはんだ組成、それらを形成するシステム、およびはんだ付けされたパッケージの組み立て方法
JP4918088B2 (ja) * 2005-06-30 2012-04-18 インテル・コーポレーション エレクトロマイグレーション耐性を有し柔軟性のあるワイヤ相互接続、ナノサイズのはんだ組成、それらを形成するシステム、およびはんだ付けされたパッケージの組み立て方法
US7960834B2 (en) 2006-04-24 2011-06-14 Murata Manufacturing Co., Ltd. Electronic element that includes multilayered bonding interface between first electrode having aluminum-containing surface and second electrode composed of metal nanoparticle sintered body
WO2007122925A1 (ja) 2006-04-24 2007-11-01 Murata Manufacturing Co., Ltd. 電子部品、それを用いた電子部品装置およびその製造方法
JP2007330980A (ja) * 2006-06-13 2007-12-27 Nissan Motor Co Ltd 接合方法
JP2008195974A (ja) * 2007-02-08 2008-08-28 Toyota Motor Corp 接合方法
JP2008244242A (ja) * 2007-03-28 2008-10-09 Hitachi Ltd 半導体装置、その製造方法、複合金属体及びその製造方法
JP5182296B2 (ja) * 2008-02-07 2013-04-17 株式会社村田製作所 電子部品装置の製造方法
JP5158904B2 (ja) * 2010-03-19 2013-03-06 古河電気工業株式会社 導電接続部材、及び導電接続部材の作製方法
WO2011114751A1 (ja) * 2010-03-19 2011-09-22 古河電気工業株式会社 導電接続部材、及び導電接続部材の作製方法
US10177079B2 (en) 2010-03-19 2019-01-08 Furukawa Electric Co., Ltd. Conductive connecting member and manufacturing method of same
JP2013041870A (ja) * 2011-08-11 2013-02-28 Furukawa Electric Co Ltd:The 半導体装置
WO2014208690A1 (ja) 2013-06-28 2014-12-31 古河電気工業株式会社 接続構造体、及び半導体装置
JP2016178334A (ja) * 2016-06-09 2016-10-06 ローム株式会社 半導体装置およびその製造方法
KR101898647B1 (ko) * 2017-05-11 2018-09-14 서울과학기술대학교 산학협력단 은코팅 구리 호일을 이용한 접합 소재 및 이를 이용한 접합 방법
JP2018206840A (ja) * 2017-05-31 2018-12-27 株式会社応用ナノ粒子研究所 放熱構造体
JP2021072304A (ja) * 2019-10-29 2021-05-06 ミクロン電気株式会社 Ｐｔｃサーミスタの接合方法

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