JP2004128357A - 電極配設基体及びその電極接合方法 - Google Patents

電極配設基体及びその電極接合方法 Download PDF

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Publication number
JP2004128357A
JP2004128357A JP2002292868A JP2002292868A JP2004128357A JP 2004128357 A JP2004128357 A JP 2004128357A JP 2002292868 A JP2002292868 A JP 2002292868A JP 2002292868 A JP2002292868 A JP 2002292868A JP 2004128357 A JP2004128357 A JP 2004128357A
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Japan
Prior art keywords
electrode
bonding
composite metal
heating
organic substance
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Pending
Application number
JP2002292868A
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English (en)
Japanese (ja)
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JP2004128357A5 (enrdf_load_stackoverflow
Inventor
Yusuke Chikamori
近森　祐介
Kaori Mikojima
神子島　かおり
Naoaki Kogure
小榑　直明
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Ebara Corp
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Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2002292868A priority Critical patent/JP2004128357A/ja
Priority to KR1020047000955A priority patent/KR20050040812A/ko
Priority to DE60326760T priority patent/DE60326760D1/de
Priority to US10/484,454 priority patent/US20040245648A1/en
Priority to EP03788702A priority patent/EP1578559B1/en
Priority to PCT/JP2003/011797 priority patent/WO2004026526A1/en
Priority to CNB038009056A priority patent/CN100337782C/zh
Priority to TW092125572A priority patent/TWI284581B/zh
Publication of JP2004128357A publication Critical patent/JP2004128357A/ja
Publication of JP2004128357A5 publication Critical patent/JP2004128357A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/8184—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83222—Induction heating, i.e. eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz

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  • Wire Bonding (AREA)
JP2002292868A 2002-09-18 2002-10-04 電極配設基体及びその電極接合方法 Pending JP2004128357A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002292868A JP2004128357A (ja) 2002-10-04 2002-10-04 電極配設基体及びその電極接合方法
KR1020047000955A KR20050040812A (ko) 2002-09-18 2003-09-17 본딩물질 및 본딩방법
DE60326760T DE60326760D1 (de) 2002-09-18 2003-09-17 Verfahren zum verbinden
US10/484,454 US20040245648A1 (en) 2002-09-18 2003-09-17 Bonding material and bonding method
EP03788702A EP1578559B1 (en) 2002-09-18 2003-09-17 Bonding method
PCT/JP2003/011797 WO2004026526A1 (en) 2002-09-18 2003-09-17 Bonding material and bonding method
CNB038009056A CN100337782C (zh) 2002-09-18 2003-09-17 接合材料
TW092125572A TWI284581B (en) 2002-09-18 2003-09-17 Bonding material and bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002292868A JP2004128357A (ja) 2002-10-04 2002-10-04 電極配設基体及びその電極接合方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008002999A Division JP2008098683A (ja) 2008-01-10 2008-01-10 電極配設基体の電極接合方法

Publications (2)

Publication Number Publication Date
JP2004128357A true JP2004128357A (ja) 2004-04-22
JP2004128357A5 JP2004128357A5 (enrdf_load_stackoverflow) 2005-08-25

Family

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JP2002292868A Pending JP2004128357A (ja) 2002-09-18 2002-10-04 電極配設基体及びその電極接合方法

Country Status (1)

Country Link
JP (1) JP2004128357A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186748A (ja) * 2004-12-28 2006-07-13 Daishinku Corp 圧電振動デバイス
JP2006202944A (ja) * 2005-01-20 2006-08-03 Nissan Motor Co Ltd 接合方法及び接合構造
JP2006211089A (ja) * 2005-01-26 2006-08-10 Daishinku Corp 圧電振動デバイス
WO2007122925A1 (ja) 2006-04-24 2007-11-01 Murata Manufacturing Co., Ltd. 電子部品、それを用いた電子部品装置およびその製造方法
JP2007330980A (ja) * 2006-06-13 2007-12-27 Nissan Motor Co Ltd 接合方法
US7361590B2 (en) 2005-01-20 2008-04-22 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008195974A (ja) * 2007-02-08 2008-08-28 Toyota Motor Corp 接合方法
JP2008244242A (ja) * 2007-03-28 2008-10-09 Hitachi Ltd 半導体装置、その製造方法、複合金属体及びその製造方法
JP2008545257A (ja) * 2005-06-30 2008-12-11 インテル・コーポレーション エレクトロマイグレーション耐性を有し柔軟性のあるワイヤ相互接続、ナノサイズのはんだ組成、それらを形成するシステム、およびはんだ付けされたパッケージの組み立て方法
US7528485B2 (en) 2004-07-29 2009-05-05 Hitachi, Ltd. Semiconductor device, power converter device using it, and hybrid vehicle using the power converter device
WO2011114751A1 (ja) * 2010-03-19 2011-09-22 古河電気工業株式会社 導電接続部材、及び導電接続部材の作製方法
JP2013041870A (ja) * 2011-08-11 2013-02-28 Furukawa Electric Co Ltd:The 半導体装置
JP5182296B2 (ja) * 2008-02-07 2013-04-17 株式会社村田製作所 電子部品装置の製造方法
WO2014208690A1 (ja) 2013-06-28 2014-12-31 古河電気工業株式会社 接続構造体、及び半導体装置
JP2016178334A (ja) * 2016-06-09 2016-10-06 ローム株式会社 半導体装置およびその製造方法
KR101898647B1 (ko) * 2017-05-11 2018-09-14 서울과학기술대학교 산학협력단 은코팅 구리 호일을 이용한 접합 소재 및 이를 이용한 접합 방법
JP2018206840A (ja) * 2017-05-31 2018-12-27 株式会社応用ナノ粒子研究所 放熱構造体
JP2021072304A (ja) * 2019-10-29 2021-05-06 ミクロン電気株式会社 Ｐｔｃサーミスタの接合方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528485B2 (en) 2004-07-29 2009-05-05 Hitachi, Ltd. Semiconductor device, power converter device using it, and hybrid vehicle using the power converter device
JP2006186748A (ja) * 2004-12-28 2006-07-13 Daishinku Corp 圧電振動デバイス
JP2006202944A (ja) * 2005-01-20 2006-08-03 Nissan Motor Co Ltd 接合方法及び接合構造
US7361590B2 (en) 2005-01-20 2008-04-22 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
JP2006211089A (ja) * 2005-01-26 2006-08-10 Daishinku Corp 圧電振動デバイス
JP2008545257A (ja) * 2005-06-30 2008-12-11 インテル・コーポレーション エレクトロマイグレーション耐性を有し柔軟性のあるワイヤ相互接続、ナノサイズのはんだ組成、それらを形成するシステム、およびはんだ付けされたパッケージの組み立て方法
JP4918088B2 (ja) * 2005-06-30 2012-04-18 インテル・コーポレーション エレクトロマイグレーション耐性を有し柔軟性のあるワイヤ相互接続、ナノサイズのはんだ組成、それらを形成するシステム、およびはんだ付けされたパッケージの組み立て方法
US7960834B2 (en) 2006-04-24 2011-06-14 Murata Manufacturing Co., Ltd. Electronic element that includes multilayered bonding interface between first electrode having aluminum-containing surface and second electrode composed of metal nanoparticle sintered body
WO2007122925A1 (ja) 2006-04-24 2007-11-01 Murata Manufacturing Co., Ltd. 電子部品、それを用いた電子部品装置およびその製造方法
JP2007330980A (ja) * 2006-06-13 2007-12-27 Nissan Motor Co Ltd 接合方法
JP2008195974A (ja) * 2007-02-08 2008-08-28 Toyota Motor Corp 接合方法
JP2008244242A (ja) * 2007-03-28 2008-10-09 Hitachi Ltd 半導体装置、その製造方法、複合金属体及びその製造方法
JP5182296B2 (ja) * 2008-02-07 2013-04-17 株式会社村田製作所 電子部品装置の製造方法
JP5158904B2 (ja) * 2010-03-19 2013-03-06 古河電気工業株式会社 導電接続部材、及び導電接続部材の作製方法
WO2011114751A1 (ja) * 2010-03-19 2011-09-22 古河電気工業株式会社 導電接続部材、及び導電接続部材の作製方法
US10177079B2 (en) 2010-03-19 2019-01-08 Furukawa Electric Co., Ltd. Conductive connecting member and manufacturing method of same
JP2013041870A (ja) * 2011-08-11 2013-02-28 Furukawa Electric Co Ltd:The 半導体装置
WO2014208690A1 (ja) 2013-06-28 2014-12-31 古河電気工業株式会社 接続構造体、及び半導体装置
JP2016178334A (ja) * 2016-06-09 2016-10-06 ローム株式会社 半導体装置およびその製造方法
KR101898647B1 (ko) * 2017-05-11 2018-09-14 서울과학기술대학교 산학협력단 은코팅 구리 호일을 이용한 접합 소재 및 이를 이용한 접합 방법
JP2018206840A (ja) * 2017-05-31 2018-12-27 株式会社応用ナノ粒子研究所 放熱構造体
JP2021072304A (ja) * 2019-10-29 2021-05-06 ミクロン電気株式会社 Ｐｔｃサーミスタの接合方法

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