JP2004068073A5 - - Google Patents

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Publication number
JP2004068073A5
JP2004068073A5 JP2002228165A JP2002228165A JP2004068073A5 JP 2004068073 A5 JP2004068073 A5 JP 2004068073A5 JP 2002228165 A JP2002228165 A JP 2002228165A JP 2002228165 A JP2002228165 A JP 2002228165A JP 2004068073 A5 JP2004068073 A5 JP 2004068073A5
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JP
Japan
Prior art keywords
srruo
mol
sintered body
conductive oxide
based conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002228165A
Other languages
English (en)
Japanese (ja)
Other versions
JP4544501B2 (ja
JP2004068073A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002228165A external-priority patent/JP4544501B2/ja
Priority to JP2002228165A priority Critical patent/JP4544501B2/ja
Priority to US10/522,263 priority patent/US7252794B2/en
Priority to PCT/JP2003/007483 priority patent/WO2004016824A1/ja
Priority to KR1020057001336A priority patent/KR100642929B1/ko
Priority to TW092116229A priority patent/TWI227744B/zh
Priority to MYPI20032836A priority patent/MY142079A/en
Publication of JP2004068073A publication Critical patent/JP2004068073A/ja
Publication of JP2004068073A5 publication Critical patent/JP2004068073A5/ja
Publication of JP4544501B2 publication Critical patent/JP4544501B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002228165A 2002-08-06 2002-08-06 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 Expired - Lifetime JP4544501B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002228165A JP4544501B2 (ja) 2002-08-06 2002-08-06 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法
US10/522,263 US7252794B2 (en) 2002-08-06 2003-06-12 Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them
PCT/JP2003/007483 WO2004016824A1 (ja) 2002-08-06 2003-06-12 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法
KR1020057001336A KR100642929B1 (ko) 2002-08-06 2003-06-12 도전성 산화물 소결체, 이 소결체로부터 이루어진스퍼터링 타겟트 및 이들의 제조방법
TW092116229A TWI227744B (en) 2002-08-06 2003-06-16 Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them
MYPI20032836A MY142079A (en) 2002-08-06 2003-07-29 Conductive oxide sintered body, sputtering target formed from said sintered body, and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002228165A JP4544501B2 (ja) 2002-08-06 2002-08-06 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法

Publications (3)

Publication Number Publication Date
JP2004068073A JP2004068073A (ja) 2004-03-04
JP2004068073A5 true JP2004068073A5 (https=) 2005-07-28
JP4544501B2 JP4544501B2 (ja) 2010-09-15

Family

ID=31884317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002228165A Expired - Lifetime JP4544501B2 (ja) 2002-08-06 2002-08-06 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法

Country Status (6)

Country Link
US (1) US7252794B2 (https=)
JP (1) JP4544501B2 (https=)
KR (1) KR100642929B1 (https=)
MY (1) MY142079A (https=)
TW (1) TWI227744B (https=)
WO (1) WO2004016824A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4351213B2 (ja) * 2003-09-03 2009-10-28 日鉱金属株式会社 スパッタリング用ターゲット及びその製造方法
JP4522991B2 (ja) * 2004-03-01 2010-08-11 日鉱金属株式会社 高純度Ｒｕ粉末の製造方法
RU2380455C2 (ru) * 2005-06-28 2010-01-27 Ниппон Майнинг Энд Металз Ко., Лтд. Распыляемая мишень на основе оксид галлия-оксид цинка, способ формирования прозрачной проводящей пленки и прозрачная проводящая пленка
EP1897968B1 (en) * 2005-06-28 2013-08-07 JX Nippon Mining & Metals Corporation Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film
EP2003226B1 (en) * 2006-02-22 2013-04-24 JX Nippon Mining & Metals Corporation Sintered sputtering target made of high-melting metals
JP4552950B2 (ja) * 2006-03-15 2010-09-29 住友金属鉱山株式会社 ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜
SG11202011990SA (en) * 2018-08-09 2021-01-28 Jx Nippon Mining & Metals Corp Sputtering target, granular film, and perpendicular magnetic recording medium
KR20230099536A (ko) 2021-12-27 2023-07-04 삼성전자주식회사 배선 구조체 및 이를 포함하는 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624542A (en) * 1992-05-11 1997-04-29 Gas Research Institute Enhancement of mechanical properties of ceramic membranes and solid electrolytes
JPH0656503A (ja) * 1992-08-10 1994-03-01 Showa Denko Kk Ｉｔｏ焼結体
DE4421007A1 (de) * 1994-06-18 1995-12-21 Philips Patentverwaltung Elektronisches Bauteil und Verfahren zu seiner Herstellung
JP3710021B2 (ja) 1997-06-03 2005-10-26 三井金属鉱業株式会社 酸化錫−酸化第一アンチモン焼結体ターゲットおよびその製造方法
JP3636914B2 (ja) * 1998-02-16 2005-04-06 株式会社日鉱マテリアルズ 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット
JP3768007B2 (ja) 1998-06-17 2006-04-19 株式会社日鉱マテリアルズ 高純度ＳｒｘＢｉｙＴａ２Ｏ５＋ｘ＋３ｙ／２スパッタリングターゲット材
JP2000034563A (ja) * 1998-07-14 2000-02-02 Japan Energy Corp 高純度ルテニウムスパッタリングターゲットの製造方法及び高純度ルテニウムスパッタリングターゲット
JP2000128638A (ja) 1998-10-30 2000-05-09 Kyocera Corp ルテニウム酸ストロンチウム焼結体とその製造方法及びこれを用いたスパッタリングターゲット
US6132487A (en) * 1998-11-11 2000-10-17 Nikko Materials Company, Limited Mixed powder for powder metallurgy, sintered compact of powder metallurgy, and methods for the manufacturing thereof
JP2000247739A (ja) * 1999-02-25 2000-09-12 Vacuum Metallurgical Co Ltd 高密度Ｐｔ系金属含有金属導電性酸化物およびその製造方法
JP3745553B2 (ja) * 1999-03-04 2006-02-15 富士通株式会社 強誘電体キャパシタ、半導体装置の製造方法
JP4790118B2 (ja) * 2000-12-26 2011-10-12 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及びその製造方法
JP2002211978A (ja) * 2001-01-11 2002-07-31 Hitachi Metals Ltd ストロンチウム・ルテニウム酸化物焼結体の製造方法およびストロンチウム・ルテニウム酸化物焼結体

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