JP2004068073A5 - - Google Patents
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- Publication number
- JP2004068073A5 JP2004068073A5 JP2002228165A JP2002228165A JP2004068073A5 JP 2004068073 A5 JP2004068073 A5 JP 2004068073A5 JP 2002228165 A JP2002228165 A JP 2002228165A JP 2002228165 A JP2002228165 A JP 2002228165A JP 2004068073 A5 JP2004068073 A5 JP 2004068073A5
- Authority
- JP
- Japan
- Prior art keywords
- srruo
- mol
- sintered body
- conductive oxide
- based conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910004121 SrRuO Inorganic materials 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000005245 sintering Methods 0.000 claims 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims 3
- 238000005477 sputtering target Methods 0.000 claims 3
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002228165A JP4544501B2 (ja) | 2002-08-06 | 2002-08-06 | 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 |
| US10/522,263 US7252794B2 (en) | 2002-08-06 | 2003-06-12 | Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them |
| PCT/JP2003/007483 WO2004016824A1 (ja) | 2002-08-06 | 2003-06-12 | 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 |
| KR1020057001336A KR100642929B1 (ko) | 2002-08-06 | 2003-06-12 | 도전성 산화물 소결체, 이 소결체로부터 이루어진스퍼터링 타겟트 및 이들의 제조방법 |
| TW092116229A TWI227744B (en) | 2002-08-06 | 2003-06-16 | Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them |
| MYPI20032836A MY142079A (en) | 2002-08-06 | 2003-07-29 | Conductive oxide sintered body, sputtering target formed from said sintered body, and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002228165A JP4544501B2 (ja) | 2002-08-06 | 2002-08-06 | 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004068073A JP2004068073A (ja) | 2004-03-04 |
| JP2004068073A5 true JP2004068073A5 (enExample) | 2005-07-28 |
| JP4544501B2 JP4544501B2 (ja) | 2010-09-15 |
Family
ID=31884317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002228165A Expired - Lifetime JP4544501B2 (ja) | 2002-08-06 | 2002-08-06 | 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7252794B2 (enExample) |
| JP (1) | JP4544501B2 (enExample) |
| KR (1) | KR100642929B1 (enExample) |
| MY (1) | MY142079A (enExample) |
| TW (1) | TWI227744B (enExample) |
| WO (1) | WO2004016824A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4351213B2 (ja) * | 2003-09-03 | 2009-10-28 | 日鉱金属株式会社 | スパッタリング用ターゲット及びその製造方法 |
| KR100881851B1 (ko) * | 2004-03-01 | 2009-02-06 | 닛코킨조쿠 가부시키가이샤 | 고순도 루테니움 분말, 이 고순도 루테니움 분말을소결하여 얻는 스퍼터링 타겟트 및 이 타겟트를 스퍼터링하여 얻은 박막 및 고순도 루테니움 분말의 제조방법 |
| US7686985B2 (en) * | 2005-06-28 | 2010-03-30 | Nippon Mining & Metals Co., Ltd | Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film |
| KR101004981B1 (ko) * | 2005-06-28 | 2011-01-04 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 산화갈륨-산화아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막 |
| US8118984B2 (en) * | 2006-02-22 | 2012-02-21 | Jx Nippon Mining & Metals Corporation | Sintered sputtering target made of refractory metals |
| JP4552950B2 (ja) * | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
| SG11202011990SA (en) | 2018-08-09 | 2021-01-28 | Jx Nippon Mining & Metals Corp | Sputtering target, granular film, and perpendicular magnetic recording medium |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5624542A (en) | 1992-05-11 | 1997-04-29 | Gas Research Institute | Enhancement of mechanical properties of ceramic membranes and solid electrolytes |
| JPH0656503A (ja) | 1992-08-10 | 1994-03-01 | Showa Denko Kk | Ｉｔｏ焼結体 |
| DE4421007A1 (de) | 1994-06-18 | 1995-12-21 | Philips Patentverwaltung | Elektronisches Bauteil und Verfahren zu seiner Herstellung |
| JP3710021B2 (ja) | 1997-06-03 | 2005-10-26 | 三井金属鉱業株式会社 | 酸化錫−酸化第一アンチモン焼結体ターゲットおよびその製造方法 |
| JP3636914B2 (ja) | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット |
| JP3768007B2 (ja) | 1998-06-17 | 2006-04-19 | 株式会社日鉱マテリアルズ | 高純度ＳｒｘＢｉｙＴａ２Ｏ５＋ｘ＋３ｙ／２スパッタリングターゲット材 |
| JP2000034563A (ja) | 1998-07-14 | 2000-02-02 | Japan Energy Corp | 高純度ルテニウムスパッタリングターゲットの製造方法及び高純度ルテニウムスパッタリングターゲット |
| JP2000128638A (ja) | 1998-10-30 | 2000-05-09 | Kyocera Corp | ルテニウム酸ストロンチウム焼結体とその製造方法及びこれを用いたスパッタリングターゲット |
| US6132487A (en) | 1998-11-11 | 2000-10-17 | Nikko Materials Company, Limited | Mixed powder for powder metallurgy, sintered compact of powder metallurgy, and methods for the manufacturing thereof |
| JP2000247739A (ja) * | 1999-02-25 | 2000-09-12 | Vacuum Metallurgical Co Ltd | 高密度Ｐｔ系金属含有金属導電性酸化物およびその製造方法 |
| JP3745553B2 (ja) | 1999-03-04 | 2006-02-15 | 富士通株式会社 | 強誘電体キャパシタ、半導体装置の製造方法 |
| JP4790118B2 (ja) * | 2000-12-26 | 2011-10-12 | Ｊｘ日鉱日石金属株式会社 | 酸化物焼結体及びその製造方法 |
| JP2002211978A (ja) | 2001-01-11 | 2002-07-31 | Hitachi Metals Ltd | ストロンチウム・ルテニウム酸化物焼結体の製造方法およびストロンチウム・ルテニウム酸化物焼結体 |
-
2002
- 2002-08-06 JP JP2002228165A patent/JP4544501B2/ja not_active Expired - Lifetime
-
2003
- 2003-06-12 KR KR1020057001336A patent/KR100642929B1/ko not_active Expired - Lifetime
- 2003-06-12 WO PCT/JP2003/007483 patent/WO2004016824A1/ja not_active Ceased
- 2003-06-12 US US10/522,263 patent/US7252794B2/en not_active Expired - Lifetime
- 2003-06-16 TW TW092116229A patent/TWI227744B/zh not_active IP Right Cessation
- 2003-07-29 MY MYPI20032836A patent/MY142079A/en unknown