JP2004048029A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2004048029A JP2004048029A JP2003271849A JP2003271849A JP2004048029A JP 2004048029 A JP2004048029 A JP 2004048029A JP 2003271849 A JP2003271849 A JP 2003271849A JP 2003271849 A JP2003271849 A JP 2003271849A JP 2004048029 A JP2004048029 A JP 2004048029A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 236
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 71
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 239000003054 catalyst Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 45
- 230000003197 catalytic effect Effects 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 32
- 230000001678 irradiating effect Effects 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
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- 238000002425 crystallisation Methods 0.000 description 22
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
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- 238000000137 annealing Methods 0.000 description 6
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- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
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- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 4
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 or the like Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003271849A JP2004048029A (ja) | 2002-07-09 | 2003-07-08 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002200555 | 2002-07-09 | ||
| JP2003271849A JP2004048029A (ja) | 2002-07-09 | 2003-07-08 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009184098A Division JP5137916B2 (ja) | 2002-07-09 | 2009-08-07 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004048029A true JP2004048029A (ja) | 2004-02-12 |
| JP2004048029A5 JP2004048029A5 (enExample) | 2006-08-03 |
Family
ID=31719801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003271849A Withdrawn JP2004048029A (ja) | 2002-07-09 | 2003-07-08 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004048029A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008252076A (ja) * | 2007-03-02 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2008270779A (ja) * | 2007-03-23 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2015179881A (ja) * | 2007-05-18 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018010308A (ja) * | 2017-08-23 | 2018-01-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2018013790A (ja) * | 2017-09-05 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2018013789A (ja) * | 2017-09-05 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US9977286B2 (en) | 2007-05-17 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154549A (ja) * | 1984-01-24 | 1985-08-14 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH01162376A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH06318700A (ja) * | 1993-03-12 | 1994-11-15 | Semiconductor Energy Lab Co Ltd | 半導体回路およびその作製方法 |
| JPH07321339A (ja) * | 1993-06-25 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
-
2003
- 2003-07-08 JP JP2003271849A patent/JP2004048029A/ja not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154549A (ja) * | 1984-01-24 | 1985-08-14 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH01162376A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH06318700A (ja) * | 1993-03-12 | 1994-11-15 | Semiconductor Energy Lab Co Ltd | 半導体回路およびその作製方法 |
| JPH07321339A (ja) * | 1993-06-25 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101380639B1 (ko) | 2007-03-02 | 2014-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP2008252076A (ja) * | 2007-03-02 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US10032919B2 (en) | 2007-03-23 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2008270779A (ja) * | 2007-03-23 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US10541337B2 (en) | 2007-03-23 | 2020-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9177811B2 (en) | 2007-03-23 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US12253759B2 (en) | 2007-05-17 | 2025-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US11520185B2 (en) | 2007-05-17 | 2022-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US9977286B2 (en) | 2007-05-17 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US11754881B2 (en) | 2007-05-17 | 2023-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US12019335B2 (en) | 2007-05-17 | 2024-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US10222653B2 (en) | 2007-05-17 | 2019-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US10451924B2 (en) | 2007-05-17 | 2019-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US10962838B2 (en) | 2007-05-17 | 2021-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US10831064B2 (en) | 2007-05-17 | 2020-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2018129522A (ja) * | 2007-05-18 | 2018-08-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015179881A (ja) * | 2007-05-18 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018010308A (ja) * | 2017-08-23 | 2018-01-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2018013789A (ja) * | 2017-09-05 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2018013790A (ja) * | 2017-09-05 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
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