JP2004012932A - マスクの製造方法、露光方法及びデバイス製造方法 - Google Patents

マスクの製造方法、露光方法及びデバイス製造方法 Download PDF

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Publication number
JP2004012932A
JP2004012932A JP2002167769A JP2002167769A JP2004012932A JP 2004012932 A JP2004012932 A JP 2004012932A JP 2002167769 A JP2002167769 A JP 2002167769A JP 2002167769 A JP2002167769 A JP 2002167769A JP 2004012932 A JP2004012932 A JP 2004012932A
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JP
Japan
Prior art keywords
pattern
mask
desired pattern
auxiliary
size
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Pending
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JP2002167769A
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English (en)
Japanese (ja)
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JP2004012932A5 (enExample
Inventor
Kenji Yamazoe
山添　賢治
Kenji Saito
斉藤　謙治
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2002167769A priority Critical patent/JP2004012932A/ja
Priority to TW091121661A priority patent/TWI315027B/zh
Priority to EP02256555A priority patent/EP1357426A3/en
Priority to US10/251,581 priority patent/US7107573B2/en
Priority to KR10-2002-0067238A priority patent/KR100533145B1/ko
Publication of JP2004012932A publication Critical patent/JP2004012932A/ja
Priority to KR1020050075017A priority patent/KR100633461B1/ko
Publication of JP2004012932A5 publication Critical patent/JP2004012932A5/ja
Pending legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002167769A 2002-04-23 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法 Pending JP2004012932A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002167769A JP2004012932A (ja) 2002-06-07 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法
TW091121661A TWI315027B (en) 2002-04-23 2002-09-20 Mask designing method, and exposure method for illuminatiing a mask and exposing an object
EP02256555A EP1357426A3 (en) 2002-04-23 2002-09-20 Method for setting mask pattern and its illumination condition
US10/251,581 US7107573B2 (en) 2002-04-23 2002-09-20 Method for setting mask pattern and illumination condition
KR10-2002-0067238A KR100533145B1 (ko) 2002-04-23 2002-10-31 마스크패턴 및 그 조명조건의 설정방법
KR1020050075017A KR100633461B1 (ko) 2002-04-23 2005-08-17 마스크패턴 및 그 조명조건의 설정방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002167769A JP2004012932A (ja) 2002-06-07 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法

Publications (2)

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JP2004012932A true JP2004012932A (ja) 2004-01-15
JP2004012932A5 JP2004012932A5 (enExample) 2005-10-13

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JP2002167769A Pending JP2004012932A (ja) 2002-04-23 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法

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JP (1) JP2004012932A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006220837A (ja) * 2005-02-09 2006-08-24 Sony Corp フォトマスクの製造方法、および、半導体デバイスの製造方法
JP2007034207A (ja) * 2005-07-29 2007-02-08 Canon Inc マスク作成方法及びマスクパターン設計装置
JP2009229669A (ja) * 2008-03-21 2009-10-08 Renesas Technology Corp フォトマスク、そのフォトマスクを有する半導体装置の製造装置、およびそのフォトマスクを用いた半導体装置の製造方法
JP2010020187A (ja) * 2008-07-11 2010-01-28 Canon Inc 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
JP2011151423A (ja) * 2004-02-03 2011-08-04 Mentor Graphics Corp イメージの忠実度およびスループットに対する光源の最適化
JP2012212154A (ja) * 2005-04-26 2012-11-01 Renesas Electronics Corp 半導体装置の製造方法
KR101427983B1 (ko) * 2007-05-25 2014-09-23 구완회 얼라인먼트 방법 및 장치
CN114236969A (zh) * 2021-11-12 2022-03-25 京东方科技集团股份有限公司 一种曝光检测方法及装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9323161B2 (en) 2004-02-03 2016-04-26 Mentor Graphics Corporation Source optimization by assigning pixel intensities for diffractive optical element using mathematical relationship
JP2011151423A (ja) * 2004-02-03 2011-08-04 Mentor Graphics Corp イメージの忠実度およびスループットに対する光源の最適化
US10248028B2 (en) 2004-02-03 2019-04-02 Mentor Graphics Corporation Source optimization for image fidelity and throughput
JP2006220837A (ja) * 2005-02-09 2006-08-24 Sony Corp フォトマスクの製造方法、および、半導体デバイスの製造方法
JP2012212154A (ja) * 2005-04-26 2012-11-01 Renesas Electronics Corp 半導体装置の製造方法
US8719740B2 (en) 2005-04-26 2014-05-06 Renesas Electronics Corporation Semiconductor device which is subjected to optical proximity correction
JP2015028636A (ja) * 2005-04-26 2015-02-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007034207A (ja) * 2005-07-29 2007-02-08 Canon Inc マスク作成方法及びマスクパターン設計装置
KR101427983B1 (ko) * 2007-05-25 2014-09-23 구완회 얼라인먼트 방법 및 장치
JP2009229669A (ja) * 2008-03-21 2009-10-08 Renesas Technology Corp フォトマスク、そのフォトマスクを有する半導体装置の製造装置、およびそのフォトマスクを用いた半導体装置の製造方法
JP2010020187A (ja) * 2008-07-11 2010-01-28 Canon Inc 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
US8365106B2 (en) 2008-07-11 2013-01-29 Canon Kabushiki Kaisha Method for optimization of light effective source while target pattern is changed
CN114236969A (zh) * 2021-11-12 2022-03-25 京东方科技集团股份有限公司 一种曝光检测方法及装置

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