JP2004006659A - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

Info

Publication number
JP2004006659A
JP2004006659A JP2003036142A JP2003036142A JP2004006659A JP 2004006659 A JP2004006659 A JP 2004006659A JP 2003036142 A JP2003036142 A JP 2003036142A JP 2003036142 A JP2003036142 A JP 2003036142A JP 2004006659 A JP2004006659 A JP 2004006659A
Authority
JP
Japan
Prior art keywords
semiconductor laser
heat sink
laser device
groove
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003036142A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004006659A5 (enExample
Inventor
Masaharu Honda
本多 正治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP2003036142A priority Critical patent/JP2004006659A/ja
Publication of JP2004006659A publication Critical patent/JP2004006659A/ja
Publication of JP2004006659A5 publication Critical patent/JP2004006659A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
JP2003036142A 2002-03-25 2003-02-14 半導体レーザ装置 Pending JP2004006659A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003036142A JP2004006659A (ja) 2002-03-25 2003-02-14 半導体レーザ装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002083661 2002-03-25
JP2003036142A JP2004006659A (ja) 2002-03-25 2003-02-14 半導体レーザ装置

Related Child Applications (6)

Application Number Title Priority Date Filing Date
JP2005272034A Division JP2006013551A (ja) 2002-03-25 2005-09-20 半導体レーザ装置
JP2005272031A Division JP4204581B2 (ja) 2002-03-25 2005-09-20 半導体レーザ装置
JP2005272033A Division JP3986530B2 (ja) 2002-03-25 2005-09-20 半導体レーザ装置
JP2005272032A Division JP3980037B2 (ja) 2002-03-25 2005-09-20 半導体装置
JP2006207517A Division JP2006295223A (ja) 2002-03-25 2006-07-31 半導体装置
JP2006310946A Division JP2007043211A (ja) 2002-03-25 2006-11-17 半導体発光装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004006659A true JP2004006659A (ja) 2004-01-08
JP2004006659A5 JP2004006659A5 (enExample) 2005-12-08

Family

ID=30445908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003036142A Pending JP2004006659A (ja) 2002-03-25 2003-02-14 半導体レーザ装置

Country Status (1)

Country Link
JP (1) JP2004006659A (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005221988A (ja) * 2004-02-09 2005-08-18 Konica Minolta Opto Inc 光学素子及び光ピックアップ装置
JP2006196738A (ja) * 2005-01-14 2006-07-27 Sanyo Electric Co Ltd 半導体レーザ装置
JP2006303384A (ja) * 2005-04-25 2006-11-02 Shinko Electric Ind Co Ltd 光半導体素子用ステム及び光半導体装置
KR100643582B1 (ko) 2004-04-26 2006-11-10 루미마이크로 주식회사 발광 다이오드 패키지
JP2006351728A (ja) * 2005-06-14 2006-12-28 Shinko Electric Ind Co Ltd 光半導体素子用ステム及び光半導体装置
JP2007103701A (ja) * 2005-10-05 2007-04-19 Shinko Electric Ind Co Ltd 光半導体素子用パッケージ及びその製造方法
JP2007294853A (ja) * 2006-03-28 2007-11-08 Mitsubishi Electric Corp 光素子用パッケージとこれを用いた光半導体装置
JP2007299811A (ja) * 2006-04-27 2007-11-15 Eudyna Devices Inc 発光素子用ステム、半導体発光装置およびその製造方法
JP2007311390A (ja) * 2006-05-16 2007-11-29 Opnext Japan Inc 光半導体装置
KR100789675B1 (ko) 2006-12-11 2008-01-02 주식회사 코스텍시스 반도체 레이저 다이오드 패키지
JP2008235851A (ja) * 2007-02-21 2008-10-02 Shinko Electric Ind Co Ltd 光半導体素子用ステム及びその製造方法
JP2010073776A (ja) * 2008-09-17 2010-04-02 Rohm Co Ltd 半導体レーザ装置
US7801191B2 (en) 2007-10-22 2010-09-21 Sanyo Electric Co., Ltd. Semiconductor laser device
KR100994735B1 (ko) 2008-07-02 2010-11-16 주식회사 코스텍시스 반도체 레이저 다이오드 패키지
JP2012185435A (ja) * 2011-03-08 2012-09-27 Citizen Holdings Co Ltd 光装置
JP2017069387A (ja) * 2015-09-30 2017-04-06 ウシオ電機株式会社 半導体レーザ装置
JP2021150454A (ja) * 2020-03-18 2021-09-27 京セラ株式会社 配線基体および電子装置
CN114628988A (zh) * 2020-12-09 2022-06-14 新光电气工业株式会社 半导体封装用管座及其制造方法、以及半导体封装

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005221988A (ja) * 2004-02-09 2005-08-18 Konica Minolta Opto Inc 光学素子及び光ピックアップ装置
KR100643582B1 (ko) 2004-04-26 2006-11-10 루미마이크로 주식회사 발광 다이오드 패키지
JP2006196738A (ja) * 2005-01-14 2006-07-27 Sanyo Electric Co Ltd 半導体レーザ装置
JP2006303384A (ja) * 2005-04-25 2006-11-02 Shinko Electric Ind Co Ltd 光半導体素子用ステム及び光半導体装置
JP2006351728A (ja) * 2005-06-14 2006-12-28 Shinko Electric Ind Co Ltd 光半導体素子用ステム及び光半導体装置
JP2007103701A (ja) * 2005-10-05 2007-04-19 Shinko Electric Ind Co Ltd 光半導体素子用パッケージ及びその製造方法
JP2007294853A (ja) * 2006-03-28 2007-11-08 Mitsubishi Electric Corp 光素子用パッケージとこれを用いた光半導体装置
JP2007299811A (ja) * 2006-04-27 2007-11-15 Eudyna Devices Inc 発光素子用ステム、半導体発光装置およびその製造方法
JP2007311390A (ja) * 2006-05-16 2007-11-29 Opnext Japan Inc 光半導体装置
KR100789675B1 (ko) 2006-12-11 2008-01-02 주식회사 코스텍시스 반도체 레이저 다이오드 패키지
JP2008235851A (ja) * 2007-02-21 2008-10-02 Shinko Electric Ind Co Ltd 光半導体素子用ステム及びその製造方法
US7801191B2 (en) 2007-10-22 2010-09-21 Sanyo Electric Co., Ltd. Semiconductor laser device
KR100994735B1 (ko) 2008-07-02 2010-11-16 주식회사 코스텍시스 반도체 레이저 다이오드 패키지
JP2010073776A (ja) * 2008-09-17 2010-04-02 Rohm Co Ltd 半導体レーザ装置
JP2012185435A (ja) * 2011-03-08 2012-09-27 Citizen Holdings Co Ltd 光装置
JP2017069387A (ja) * 2015-09-30 2017-04-06 ウシオ電機株式会社 半導体レーザ装置
US10804675B2 (en) 2015-09-30 2020-10-13 Ushio Denki Kabushiki Kaisha To-can package semiconductor laser device having a pinless region on the underside of the package
JP2021150454A (ja) * 2020-03-18 2021-09-27 京セラ株式会社 配線基体および電子装置
CN114628988A (zh) * 2020-12-09 2022-06-14 新光电气工业株式会社 半导体封装用管座及其制造方法、以及半导体封装

Similar Documents

Publication Publication Date Title
US7889770B2 (en) Semiconductor laser device
JP2004006659A (ja) 半導体レーザ装置
JP2004031900A (ja) 半導体レーザ、その製法および光ピックアップ装置
JP2001267674A (ja) 半導体レーザ装置およびそのワイヤボンディング方法
KR20010050867A (ko) 반도체 레이저
CN1118911C (zh) 半导体激光装置
JP3802896B2 (ja) 半導体レーザ
JP3980037B2 (ja) 半導体装置
JP4204581B2 (ja) 半導体レーザ装置
JP3986530B2 (ja) 半導体レーザ装置
JP2002109774A (ja) 光ピックアップ
JP4917704B2 (ja) 半導体レーザの製法
JP3866993B2 (ja) 半導体レーザ装置及びそれを用いた光ピックアップ
JP2006013551A (ja) 半導体レーザ装置
US7308009B2 (en) Semiconductor laser and apparatus
JP2000252575A (ja) 半導体レーザ
JP2006295223A (ja) 半導体装置
JP2007043211A (ja) 半導体発光装置の製造方法
JP2009212524A (ja) 半導体レーザ
JPH04280487A (ja) 半導体レーザ装置
JP4795728B2 (ja) 光半導体素子用ステム及び光半導体装置
US6983002B2 (en) Semiconductor laser device and optical pickup using the same
JP2009147032A (ja) 半導体装置および光ピックアップ装置
JP3097527U (ja) レーザダイオードの回路基板への取り付け構造及びレーザ
CN101453099A (zh) 半导体装置及半导体装置的制造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050922

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050922

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050922

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20051227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060530

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060919

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061117

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070116

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070307

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20070323

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20070608