JP2004006659A - 半導体レーザ装置 - Google Patents
半導体レーザ装置 Download PDFInfo
- Publication number
- JP2004006659A JP2004006659A JP2003036142A JP2003036142A JP2004006659A JP 2004006659 A JP2004006659 A JP 2004006659A JP 2003036142 A JP2003036142 A JP 2003036142A JP 2003036142 A JP2003036142 A JP 2003036142A JP 2004006659 A JP2004006659 A JP 2004006659A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- heat sink
- laser device
- groove
- laser element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 37
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 239000010949 copper Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Landscapes
- Optical Head (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003036142A JP2004006659A (ja) | 2002-03-25 | 2003-02-14 | 半導体レーザ装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002083661 | 2002-03-25 | ||
| JP2003036142A JP2004006659A (ja) | 2002-03-25 | 2003-02-14 | 半導体レーザ装置 |
Related Child Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005272034A Division JP2006013551A (ja) | 2002-03-25 | 2005-09-20 | 半導体レーザ装置 |
| JP2005272031A Division JP4204581B2 (ja) | 2002-03-25 | 2005-09-20 | 半導体レーザ装置 |
| JP2005272033A Division JP3986530B2 (ja) | 2002-03-25 | 2005-09-20 | 半導体レーザ装置 |
| JP2005272032A Division JP3980037B2 (ja) | 2002-03-25 | 2005-09-20 | 半導体装置 |
| JP2006207517A Division JP2006295223A (ja) | 2002-03-25 | 2006-07-31 | 半導体装置 |
| JP2006310946A Division JP2007043211A (ja) | 2002-03-25 | 2006-11-17 | 半導体発光装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004006659A true JP2004006659A (ja) | 2004-01-08 |
| JP2004006659A5 JP2004006659A5 (enExample) | 2005-12-08 |
Family
ID=30445908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003036142A Pending JP2004006659A (ja) | 2002-03-25 | 2003-02-14 | 半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004006659A (enExample) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005221988A (ja) * | 2004-02-09 | 2005-08-18 | Konica Minolta Opto Inc | 光学素子及び光ピックアップ装置 |
| JP2006196738A (ja) * | 2005-01-14 | 2006-07-27 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
| JP2006303384A (ja) * | 2005-04-25 | 2006-11-02 | Shinko Electric Ind Co Ltd | 光半導体素子用ステム及び光半導体装置 |
| KR100643582B1 (ko) | 2004-04-26 | 2006-11-10 | 루미마이크로 주식회사 | 발광 다이오드 패키지 |
| JP2006351728A (ja) * | 2005-06-14 | 2006-12-28 | Shinko Electric Ind Co Ltd | 光半導体素子用ステム及び光半導体装置 |
| JP2007103701A (ja) * | 2005-10-05 | 2007-04-19 | Shinko Electric Ind Co Ltd | 光半導体素子用パッケージ及びその製造方法 |
| JP2007294853A (ja) * | 2006-03-28 | 2007-11-08 | Mitsubishi Electric Corp | 光素子用パッケージとこれを用いた光半導体装置 |
| JP2007299811A (ja) * | 2006-04-27 | 2007-11-15 | Eudyna Devices Inc | 発光素子用ステム、半導体発光装置およびその製造方法 |
| JP2007311390A (ja) * | 2006-05-16 | 2007-11-29 | Opnext Japan Inc | 光半導体装置 |
| KR100789675B1 (ko) | 2006-12-11 | 2008-01-02 | 주식회사 코스텍시스 | 반도체 레이저 다이오드 패키지 |
| JP2008235851A (ja) * | 2007-02-21 | 2008-10-02 | Shinko Electric Ind Co Ltd | 光半導体素子用ステム及びその製造方法 |
| JP2010073776A (ja) * | 2008-09-17 | 2010-04-02 | Rohm Co Ltd | 半導体レーザ装置 |
| US7801191B2 (en) | 2007-10-22 | 2010-09-21 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
| KR100994735B1 (ko) | 2008-07-02 | 2010-11-16 | 주식회사 코스텍시스 | 반도체 레이저 다이오드 패키지 |
| JP2012185435A (ja) * | 2011-03-08 | 2012-09-27 | Citizen Holdings Co Ltd | 光装置 |
| JP2017069387A (ja) * | 2015-09-30 | 2017-04-06 | ウシオ電機株式会社 | 半導体レーザ装置 |
| JP2021150454A (ja) * | 2020-03-18 | 2021-09-27 | 京セラ株式会社 | 配線基体および電子装置 |
| CN114628988A (zh) * | 2020-12-09 | 2022-06-14 | 新光电气工业株式会社 | 半导体封装用管座及其制造方法、以及半导体封装 |
-
2003
- 2003-02-14 JP JP2003036142A patent/JP2004006659A/ja active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005221988A (ja) * | 2004-02-09 | 2005-08-18 | Konica Minolta Opto Inc | 光学素子及び光ピックアップ装置 |
| KR100643582B1 (ko) | 2004-04-26 | 2006-11-10 | 루미마이크로 주식회사 | 발광 다이오드 패키지 |
| JP2006196738A (ja) * | 2005-01-14 | 2006-07-27 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
| JP2006303384A (ja) * | 2005-04-25 | 2006-11-02 | Shinko Electric Ind Co Ltd | 光半導体素子用ステム及び光半導体装置 |
| JP2006351728A (ja) * | 2005-06-14 | 2006-12-28 | Shinko Electric Ind Co Ltd | 光半導体素子用ステム及び光半導体装置 |
| JP2007103701A (ja) * | 2005-10-05 | 2007-04-19 | Shinko Electric Ind Co Ltd | 光半導体素子用パッケージ及びその製造方法 |
| JP2007294853A (ja) * | 2006-03-28 | 2007-11-08 | Mitsubishi Electric Corp | 光素子用パッケージとこれを用いた光半導体装置 |
| JP2007299811A (ja) * | 2006-04-27 | 2007-11-15 | Eudyna Devices Inc | 発光素子用ステム、半導体発光装置およびその製造方法 |
| JP2007311390A (ja) * | 2006-05-16 | 2007-11-29 | Opnext Japan Inc | 光半導体装置 |
| KR100789675B1 (ko) | 2006-12-11 | 2008-01-02 | 주식회사 코스텍시스 | 반도체 레이저 다이오드 패키지 |
| JP2008235851A (ja) * | 2007-02-21 | 2008-10-02 | Shinko Electric Ind Co Ltd | 光半導体素子用ステム及びその製造方法 |
| US7801191B2 (en) | 2007-10-22 | 2010-09-21 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
| KR100994735B1 (ko) | 2008-07-02 | 2010-11-16 | 주식회사 코스텍시스 | 반도체 레이저 다이오드 패키지 |
| JP2010073776A (ja) * | 2008-09-17 | 2010-04-02 | Rohm Co Ltd | 半導体レーザ装置 |
| JP2012185435A (ja) * | 2011-03-08 | 2012-09-27 | Citizen Holdings Co Ltd | 光装置 |
| JP2017069387A (ja) * | 2015-09-30 | 2017-04-06 | ウシオ電機株式会社 | 半導体レーザ装置 |
| US10804675B2 (en) | 2015-09-30 | 2020-10-13 | Ushio Denki Kabushiki Kaisha | To-can package semiconductor laser device having a pinless region on the underside of the package |
| JP2021150454A (ja) * | 2020-03-18 | 2021-09-27 | 京セラ株式会社 | 配線基体および電子装置 |
| CN114628988A (zh) * | 2020-12-09 | 2022-06-14 | 新光电气工业株式会社 | 半导体封装用管座及其制造方法、以及半导体封装 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7889770B2 (en) | Semiconductor laser device | |
| JP2004006659A (ja) | 半導体レーザ装置 | |
| JP2004031900A (ja) | 半導体レーザ、その製法および光ピックアップ装置 | |
| JP2001267674A (ja) | 半導体レーザ装置およびそのワイヤボンディング方法 | |
| KR20010050867A (ko) | 반도체 레이저 | |
| CN1118911C (zh) | 半导体激光装置 | |
| JP3802896B2 (ja) | 半導体レーザ | |
| JP3980037B2 (ja) | 半導体装置 | |
| JP4204581B2 (ja) | 半導体レーザ装置 | |
| JP3986530B2 (ja) | 半導体レーザ装置 | |
| JP2002109774A (ja) | 光ピックアップ | |
| JP4917704B2 (ja) | 半導体レーザの製法 | |
| JP3866993B2 (ja) | 半導体レーザ装置及びそれを用いた光ピックアップ | |
| JP2006013551A (ja) | 半導体レーザ装置 | |
| US7308009B2 (en) | Semiconductor laser and apparatus | |
| JP2000252575A (ja) | 半導体レーザ | |
| JP2006295223A (ja) | 半導体装置 | |
| JP2007043211A (ja) | 半導体発光装置の製造方法 | |
| JP2009212524A (ja) | 半導体レーザ | |
| JPH04280487A (ja) | 半導体レーザ装置 | |
| JP4795728B2 (ja) | 光半導体素子用ステム及び光半導体装置 | |
| US6983002B2 (en) | Semiconductor laser device and optical pickup using the same | |
| JP2009147032A (ja) | 半導体装置および光ピックアップ装置 | |
| JP3097527U (ja) | レーザダイオードの回路基板への取り付け構造及びレーザ | |
| CN101453099A (zh) | 半导体装置及半导体装置的制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050922 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050922 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050922 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20051227 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060530 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060919 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061117 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070116 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070307 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20070323 |
|
| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20070608 |