JP2004005950A5 - - Google Patents

Download PDF

Info

Publication number
JP2004005950A5
JP2004005950A5 JP2003119281A JP2003119281A JP2004005950A5 JP 2004005950 A5 JP2004005950 A5 JP 2004005950A5 JP 2003119281 A JP2003119281 A JP 2003119281A JP 2003119281 A JP2003119281 A JP 2003119281A JP 2004005950 A5 JP2004005950 A5 JP 2004005950A5
Authority
JP
Japan
Prior art keywords
coupled
preamplifier
memory cell
memory cells
input node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003119281A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004005950A (ja
Filing date
Publication date
Priority claimed from US10/136,976 external-priority patent/US6574129B1/en
Application filed filed Critical
Publication of JP2004005950A publication Critical patent/JP2004005950A/ja
Publication of JP2004005950A5 publication Critical patent/JP2004005950A5/ja
Pending legal-status Critical Current

Links

JP2003119281A 2002-04-30 2003-04-24 クロスカップルラッチ型センス増幅器を有する抵抗性クロスポイントメモリセルアレイ Pending JP2004005950A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/136,976 US6574129B1 (en) 2002-04-30 2002-04-30 Resistive cross point memory cell arrays having a cross-couple latch sense amplifier

Publications (2)

Publication Number Publication Date
JP2004005950A JP2004005950A (ja) 2004-01-08
JP2004005950A5 true JP2004005950A5 (enExample) 2005-05-12

Family

ID=22475278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003119281A Pending JP2004005950A (ja) 2002-04-30 2003-04-24 クロスカップルラッチ型センス増幅器を有する抵抗性クロスポイントメモリセルアレイ

Country Status (6)

Country Link
US (1) US6574129B1 (enExample)
EP (1) EP1359587A3 (enExample)
JP (1) JP2004005950A (enExample)
KR (1) KR101018014B1 (enExample)
CN (1) CN1455414B (enExample)
TW (1) TW200305876A (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60205569T2 (de) * 2001-12-21 2006-05-18 Kabushiki Kaisha Toshiba MRAM mit gestapelten Speicherzellen
US7038960B2 (en) * 2002-09-10 2006-05-02 Silicon Storage Technology, Inc. High speed and high precision sensing for digital multilevel non-volatile memory system
US6885600B2 (en) * 2002-09-10 2005-04-26 Silicon Storage Technology, Inc. Differential sense amplifier for multilevel non-volatile memory
KR100515053B1 (ko) * 2002-10-02 2005-09-14 삼성전자주식회사 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치
FR2846776A1 (fr) * 2002-10-30 2004-05-07 St Microelectronics Sa Cellule memoire a trois etats
US7433253B2 (en) * 2002-12-20 2008-10-07 Qimonda Ag Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module
US6946882B2 (en) * 2002-12-20 2005-09-20 Infineon Technologies Ag Current sense amplifier
US7251178B2 (en) * 2004-09-07 2007-07-31 Infineon Technologies Ag Current sense amplifier
GB0320339D0 (en) * 2003-08-29 2003-10-01 Isis Innovation Resistance array reader
US6937509B2 (en) * 2003-09-08 2005-08-30 Hewlett-Packard Development Company, L.P. Data storage device and method of forming the same
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
JP4567963B2 (ja) * 2003-12-05 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100569549B1 (ko) * 2003-12-13 2006-04-10 주식회사 하이닉스반도체 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치
US20050212022A1 (en) * 2004-03-24 2005-09-29 Greer Edward C Memory cell having an electric field programmable storage element, and method of operating same
US7158431B2 (en) 2005-03-28 2007-01-02 Silicon Storage Technology, Inc. Single transistor sensing and double transistor sensing for flash memory
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
US7286429B1 (en) * 2006-04-24 2007-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. High speed sensing amplifier for an MRAM cell
US7369446B2 (en) * 2006-07-13 2008-05-06 Atmel Corporation Method and apparatus to prevent high voltage supply degradation for high-voltage latches of a non-volatile memory
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US7929335B2 (en) * 2007-06-11 2011-04-19 International Business Machines Corporation Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
US7719913B2 (en) * 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US8514637B2 (en) * 2009-07-13 2013-08-20 Seagate Technology Llc Systems and methods of cell selection in three-dimensional cross-point array memory devices
CN102473458B (zh) * 2010-06-03 2014-11-05 松下电器产业株式会社 交叉点型电阻变化非易失性存储装置
US9257181B2 (en) 2011-03-23 2016-02-09 Samsung Electronics Co., Ltd. Sense amplification circuits, output circuits, nonvolatile memory devices, memory systems, memory cards having the same, and data outputting methods thereof
US8531902B2 (en) * 2011-06-30 2013-09-10 Qualcomm Incorporated Sensing circuit
WO2013015768A1 (en) * 2011-07-22 2013-01-31 Hewlett-Packard Development Company, L.P. Circuit and method for reading a resistive switching device in an array
US9064568B2 (en) 2011-08-26 2015-06-23 Hewlett-Packard Development Company, L.P. Circuit and method for reading a resistive switching device in an array
JP5989611B2 (ja) 2013-02-05 2016-09-07 株式会社東芝 半導体記憶装置、及びそのデータ制御方法
US10157669B2 (en) * 2013-04-02 2018-12-18 Micron Technology, Inc. Method of storing and retrieving information for a resistive random access memory (RRAM) with multi-memory cells per bit
WO2015183291A1 (en) 2014-05-30 2015-12-03 Hewlett-Packard Development Company, L.P. Memory controllers
KR102215359B1 (ko) 2014-08-01 2021-02-15 삼성전자주식회사 비휘발성 메모리 장치와 그 센싱 방법
US9972387B2 (en) 2014-10-31 2018-05-15 Hewlett Packard Enterprise Development Lp Sensing circuit for resistive memory
CN109920461B (zh) * 2017-12-12 2021-02-02 杭州潮盛科技有限公司 一种基于薄膜晶体管的阻变存储器
CN116343874B (zh) * 2021-12-24 2025-07-11 长鑫存储技术有限公司 反熔丝存储器及其控制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950006336B1 (ko) * 1992-08-08 1995-06-14 삼성전자주식회사 반도체 메모리장치의 전류센싱회로
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
EP0840442B1 (en) * 1996-10-30 2003-01-29 SGS-THOMSON MICROELECTRONICS S.r.l. A two-stage fully differential operational amplifier with efficient common-mode feed back circuit
US6259280B1 (en) * 1997-09-25 2001-07-10 Texas Instruments Incorporated Class AB amplifier for use in semiconductor memory devices
US6169686B1 (en) 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US6259644B1 (en) 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6292389B1 (en) 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6297983B1 (en) 2000-02-29 2001-10-02 Hewlett-Packard Company Reference layer structure in a magnetic storage cell
US6191989B1 (en) * 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6356477B1 (en) * 2001-01-29 2002-03-12 Hewlett Packard Company Cross point memory array including shared devices for blocking sneak path currents

Similar Documents

Publication Publication Date Title
JP2004005950A5 (enExample)
JP2003323791A5 (enExample)
CN100483540C (zh) 具有电荷注入差动读出放大器的电阻性交叉点存储阵列
JP4536777B2 (ja) 電流センスアンプおよびメモリ装置
CN1455414B (zh) 带交叉耦合闩锁读出放大器的电阻交叉点存储单元阵列
US6937495B2 (en) Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
US8830733B2 (en) Circuit for generating adjustable timing signals for sensing a self-referenced MRAM cell
TW567507B (en) Hybrid resistive cross point memory cell arrays and methods of making the same
US6678189B2 (en) Method and system for performing equipotential sensing across a memory array to eliminate leakage currents
US6185143B1 (en) Magnetic random access memory (MRAM) device including differential sense amplifiers
US6522594B1 (en) Memory array incorporating noise detection line
CN100447898C (zh) 高密度存储器读出放大器
JP5173706B2 (ja) 不揮発性半導体記憶装置およびその読み出し方法
DeBrosse et al. A high-speed 128-kb MRAM core for future universal memory applications
JP2003288779A5 (enExample)
JP2003208784A (ja) 不揮発性磁気記憶装置
TW201835907A (zh) 非揮發性半導體記憶裝置
US6834018B2 (en) Nonvolatile memory device having data read operation with using reference cell and method thereof
CN101131865A (zh) 应用于存储器的多稳态读出放大器
JP3971045B2 (ja) 高集積できるマルチ−ビットデータラッチ回路を有する半導体メモリ装置
JP4543639B2 (ja) 半導体記憶装置
JP2005353145A5 (enExample)