JP2003532306A - リソグラフィ・プロセス制御のための方法およびシステム - Google Patents
リソグラフィ・プロセス制御のための方法およびシステムInfo
- Publication number
- JP2003532306A JP2003532306A JP2001580732A JP2001580732A JP2003532306A JP 2003532306 A JP2003532306 A JP 2003532306A JP 2001580732 A JP2001580732 A JP 2001580732A JP 2001580732 A JP2001580732 A JP 2001580732A JP 2003532306 A JP2003532306 A JP 2003532306A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resist
- module
- property
- parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20237200P | 2000-05-04 | 2000-05-04 | |
| US60/202,372 | 2000-05-04 | ||
| PCT/US2001/014367 WO2001084382A1 (en) | 2000-05-04 | 2001-05-04 | Methods and systems for lithography process control |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011189697A Division JP6032875B2 (ja) | 2000-05-04 | 2011-08-31 | リソグラフィ・プロセス制御のための方法およびシステム |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003532306A true JP2003532306A (ja) | 2003-10-28 |
Family
ID=22749596
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001580732A Pending JP2003532306A (ja) | 2000-05-04 | 2001-05-04 | リソグラフィ・プロセス制御のための方法およびシステム |
| JP2011189697A Expired - Lifetime JP6032875B2 (ja) | 2000-05-04 | 2011-08-31 | リソグラフィ・プロセス制御のための方法およびシステム |
| JP2012075834A Expired - Lifetime JP6032913B2 (ja) | 2000-05-04 | 2012-03-29 | リソグラフィ・プロセス制御のための方法およびシステム |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011189697A Expired - Lifetime JP6032875B2 (ja) | 2000-05-04 | 2011-08-31 | リソグラフィ・プロセス制御のための方法およびシステム |
| JP2012075834A Expired - Lifetime JP6032913B2 (ja) | 2000-05-04 | 2012-03-29 | リソグラフィ・プロセス制御のための方法およびシステム |
Country Status (3)
| Country | Link |
|---|---|
| US (5) | US6689519B2 (enExample) |
| JP (3) | JP2003532306A (enExample) |
| WO (1) | WO2001084382A1 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006895A (ja) * | 2002-05-30 | 2004-01-08 | Agere Systems Inc | スキャタロメトリ識別法を利用したオーバーレイ測定 |
| JP2007517400A (ja) * | 2003-12-24 | 2007-06-28 | ラム リサーチ コーポレーション | 統合又は独立計測を用いる改善されたウェーハ均一性のための処理制御方法及び装置 |
| JP2009141352A (ja) * | 2007-12-05 | 2009-06-25 | Brion Technologies Inc | リソグラフィプロセスウィンドウをシミュレートするための方法及びシステム |
| JP2010278204A (ja) * | 2009-05-28 | 2010-12-09 | Oki Semiconductor Co Ltd | レジストパターンの形成方法 |
| JP2012253336A (ja) * | 2011-05-25 | 2012-12-20 | Asml Netherlands Bv | 計算プロセス制御 |
| JP2014515885A (ja) * | 2011-04-22 | 2014-07-03 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル |
| KR101433391B1 (ko) | 2008-02-25 | 2014-08-26 | 도쿄엘렉트론가부시키가이샤 | 기판의 처리방법, 컴퓨터 기억매체 및 기판처리 시스템 |
Families Citing this family (147)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060141376A1 (en) * | 2004-12-22 | 2006-06-29 | Ady Levy | Methods and systems for controlling variation in dimensions of patterned features across a wafer |
| WO2001084382A1 (en) * | 2000-05-04 | 2001-11-08 | Kla-Tencor, Inc. | Methods and systems for lithography process control |
| US20100279213A1 (en) * | 2000-05-04 | 2010-11-04 | Kla-Tencor Corporation | Methods and systems for controlling variation in dimensions of patterned features across a wafer |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US7349090B2 (en) * | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
| US7139083B2 (en) * | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| EP1205806A1 (en) * | 2000-11-09 | 2002-05-15 | Semiconductor300 GmbH & Co KG | Method for exposing a semiconductor wafer |
| US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US6956659B2 (en) | 2001-05-22 | 2005-10-18 | Nikon Precision Inc. | Measurement of critical dimensions of etched features |
| US6773939B1 (en) * | 2001-07-02 | 2004-08-10 | Advanced Micro Devices, Inc. | Method and apparatus for determining critical dimension variation in a line structure |
| US7061615B1 (en) | 2001-09-20 | 2006-06-13 | Nanometrics Incorporated | Spectroscopically measured overlay target |
| US6967068B1 (en) * | 2001-11-07 | 2005-11-22 | Advanced Micro Devices, Inc. | Method of controlling stepper process parameters based upon optical properties of incoming anti-reflecting coating layers, and system for accomplishing same |
| JP3839306B2 (ja) * | 2001-11-08 | 2006-11-01 | 株式会社ルネサステクノロジ | 半導体装置の製造方法および製造システム |
| US6737208B1 (en) * | 2001-12-17 | 2004-05-18 | Advanced Micro Devices, Inc. | Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information |
| US6758612B1 (en) * | 2002-01-16 | 2004-07-06 | Advanced Micro Devices, Inc. | System and method for developer endpoint detection by reflectometry or scatterometry |
| US6960416B2 (en) | 2002-03-01 | 2005-11-01 | Applied Materials, Inc. | Method and apparatus for controlling etch processes during fabrication of semiconductor devices |
| US6858361B2 (en) | 2002-03-01 | 2005-02-22 | David S. L. Mui | Methodology for repeatable post etch CD in a production tool |
| US7225047B2 (en) | 2002-03-19 | 2007-05-29 | Applied Materials, Inc. | Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements |
| TW531822B (en) * | 2002-03-29 | 2003-05-11 | Taiwan Semiconductor Mfg | Method for controlling inter-field critical dimensions of wafer |
| US6949462B1 (en) | 2002-04-04 | 2005-09-27 | Nanometrics Incorporated | Measuring an alignment target with multiple polarization states |
| US6958819B1 (en) | 2002-04-04 | 2005-10-25 | Nanometrics Incorporated | Encoder with an alignment target |
| US7046361B1 (en) | 2002-04-04 | 2006-05-16 | Nanometrics Incorporated | Positioning two elements using an alignment target with a designed offset |
| US6982793B1 (en) | 2002-04-04 | 2006-01-03 | Nanometrics Incorporated | Method and apparatus for using an alignment target with designed in offset |
| US6974653B2 (en) | 2002-04-19 | 2005-12-13 | Nikon Precision Inc. | Methods for critical dimension and focus mapping using critical dimension test marks |
| JP4018438B2 (ja) * | 2002-04-30 | 2007-12-05 | キヤノン株式会社 | 半導体露光装置を管理する管理システム |
| US6924088B2 (en) | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method and system for realtime CD microloading control |
| US8321048B1 (en) * | 2002-06-28 | 2012-11-27 | Advanced Micro Devices, Inc. | Associating data with workpieces and correlating the data with yield data |
| US6912435B2 (en) * | 2002-08-28 | 2005-06-28 | Inficon Lt Inc. | Methods and systems for controlling reticle-induced errors |
| DE10240115B4 (de) * | 2002-08-30 | 2004-10-28 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System zum Handhaben von Substraten in einer Produktionslinie mit einer Cluster-Anlage und einer Messanlage |
| US6733936B1 (en) | 2002-09-19 | 2004-05-11 | Integrated Device Technology, Inc. | Method for generating a swing curve and photoresist feature formed using swing curve |
| US6992764B1 (en) | 2002-09-30 | 2006-01-31 | Nanometrics Incorporated | Measuring an alignment target with a single polarization state |
| US7265382B2 (en) * | 2002-11-12 | 2007-09-04 | Applied Materials, Inc. | Method and apparatus employing integrated metrology for improved dielectric etch efficiency |
| AU2003302049A1 (en) * | 2002-11-20 | 2004-06-15 | Mehrdad Nikoohahad | System and method for characterizing three-dimensional structures |
| US7440105B2 (en) | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| CN1732412A (zh) | 2002-12-30 | 2006-02-08 | 皇家飞利浦电子股份有限公司 | 确定最佳工艺窗口的最佳工艺设定的方法,该最佳工艺窗口优化了确定光刻工艺最佳工艺窗口的工艺性能 |
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| US7692792B2 (en) * | 2006-06-22 | 2010-04-06 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7659988B2 (en) * | 2006-06-30 | 2010-02-09 | Asml Netherlands B.V. | Apparatus for angular-resolved spectroscopic lithography characterization and device manufacturing method |
| US7999940B2 (en) | 2006-06-30 | 2011-08-16 | Asml Netherlands B.V. | Apparatus for angular-resolved spectroscopic lithography characterization |
| US7916284B2 (en) | 2006-07-18 | 2011-03-29 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| US7808613B2 (en) * | 2006-08-03 | 2010-10-05 | Asml Netherlands B.V. | Individual wafer history storage for overlay corrections |
| US20080032491A1 (en) * | 2006-08-07 | 2008-02-07 | Sokudo Co., Ltd. | Wafer backside particle removal for track tools |
| US20080036984A1 (en) * | 2006-08-08 | 2008-02-14 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7643666B2 (en) * | 2006-08-08 | 2010-01-05 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7589832B2 (en) * | 2006-08-10 | 2009-09-15 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method |
| US7564555B2 (en) * | 2006-08-15 | 2009-07-21 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US8383323B2 (en) * | 2006-09-13 | 2013-02-26 | Samsung Austin Semiconductor, L.P. | Selective imaging through dual photoresist layers |
| US7532331B2 (en) * | 2006-09-14 | 2009-05-12 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7969577B2 (en) * | 2006-09-14 | 2011-06-28 | Asml Netherlands B.V. | Inspection apparatus, an apparatus for projecting an image and a method of measuring a property of a substrate |
| US7573584B2 (en) * | 2006-09-25 | 2009-08-11 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7445446B2 (en) * | 2006-09-29 | 2008-11-04 | Tokyo Electron Limited | Method for in-line monitoring and controlling in heat-treating of resist coated wafers |
| US7625680B2 (en) * | 2006-09-29 | 2009-12-01 | Tokyo Electron Limited | Method of real time dynamic CD control |
| US8294907B2 (en) * | 2006-10-13 | 2012-10-23 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US8233155B2 (en) * | 2006-10-13 | 2012-07-31 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7630087B2 (en) * | 2006-11-22 | 2009-12-08 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7710572B2 (en) * | 2006-11-30 | 2010-05-04 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7557934B2 (en) * | 2006-12-07 | 2009-07-07 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US20080135774A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Scatterometer, a lithographic apparatus and a focus analysis method |
| US7493186B2 (en) * | 2006-12-20 | 2009-02-17 | International Business Machines Corporation | Method and algorithm for the control of critical dimensions in a thermal flow process |
| US7916927B2 (en) * | 2007-01-16 | 2011-03-29 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7619737B2 (en) * | 2007-01-22 | 2009-11-17 | Asml Netherlands B.V | Method of measurement, an inspection apparatus and a lithographic apparatus |
| US7852459B2 (en) | 2007-02-02 | 2010-12-14 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7701577B2 (en) * | 2007-02-21 | 2010-04-20 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7724370B2 (en) * | 2007-03-01 | 2010-05-25 | Asml Netherlands B.V. | Method of inspection, a method of manufacturing, an inspection apparatus, a substrate, a mask, a lithography apparatus and a lithographic cell |
| US7599064B2 (en) | 2007-03-07 | 2009-10-06 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods |
| US7605907B2 (en) * | 2007-03-27 | 2009-10-20 | Asml Netherlands B.V. | Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method |
| US7656518B2 (en) * | 2007-03-30 | 2010-02-02 | Asml Netherlands B.V. | Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus |
| US7570358B2 (en) * | 2007-03-30 | 2009-08-04 | Asml Netherlands Bv | Angularly resolved scatterometer, inspection method, lithographic apparatus, lithographic processing cell device manufacturing method and alignment sensor |
| US8189195B2 (en) * | 2007-05-09 | 2012-05-29 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7911612B2 (en) | 2007-06-13 | 2011-03-22 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| US7858276B2 (en) * | 2007-07-06 | 2010-12-28 | Advanced Micro Devices, Inc. | Method for determining suitability of a resist in semiconductor wafer fabrication |
| US7460237B1 (en) | 2007-08-02 | 2008-12-02 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| DE102007036811B3 (de) * | 2007-08-03 | 2008-12-18 | Vistec Semiconductor Systems Gmbh | Vorrichtung und Verfahren zum Erfassen der gesamten Oberfläche eines Wafers |
| CN106991269B (zh) * | 2007-09-06 | 2020-06-09 | 德卡产品有限公司 | 处理系统和方法 |
| US20090206275A1 (en) * | 2007-10-03 | 2009-08-20 | Silcon Genesis Corporation | Accelerator particle beam apparatus and method for low contaminate processing |
| US7880863B2 (en) * | 2008-01-22 | 2011-02-01 | Infineon Technologies Ag | Lithography system with illumination monitor |
| NL1036468A1 (nl) | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| JP2009224374A (ja) * | 2008-03-13 | 2009-10-01 | Oki Semiconductor Co Ltd | Peb装置及びその制御方法 |
| NL2003364A (en) * | 2008-09-26 | 2010-03-29 | Asml Netherlands Bv | Lithographic apparatus and method. |
| NL2003719A (en) | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Delta tcc for fast sensitivity model computation. |
| NL2003699A (en) | 2008-12-18 | 2010-06-21 | Brion Tech Inc | Method and system for lithography process-window-maximixing optical proximity correction. |
| US9360858B2 (en) | 2011-08-08 | 2016-06-07 | Globalfoundries Inc. | Alignment data based process control system |
| KR101924487B1 (ko) | 2013-12-17 | 2018-12-03 | 에이에스엠엘 네델란즈 비.브이. | 수율 추산 및 제어 |
| US10073354B2 (en) | 2014-10-29 | 2018-09-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Exposure method of wafer substrate, manufacturing method of semiconductor device, and exposure tool |
| US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| EP3470924A1 (en) * | 2017-10-11 | 2019-04-17 | ASML Netherlands B.V. | Method of optimizing the position and/or size of a measurement illumination spot relative to a target on a substrate, and associated apparatus |
| US10466597B2 (en) * | 2017-11-01 | 2019-11-05 | Texas Instruments Incorporated | Methods and apparatus to control grayscale photolithography |
| US10545409B1 (en) | 2019-05-30 | 2020-01-28 | International Business Machines Corporation | Dynamic adjustment of post exposure bake during lithography utilizing real-time feedback for wafer exposure delay |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132318A (ja) * | 1985-12-04 | 1987-06-15 | Canon Inc | 露光装置 |
| JPH0435018A (ja) * | 1990-05-31 | 1992-02-05 | Sony Corp | フォトレジスト塗布手段 |
| JPH04282820A (ja) * | 1991-03-11 | 1992-10-07 | Nippon Telegr & Teleph Corp <Ntt> | パタン形成方法 |
| JPH07211630A (ja) * | 1994-01-26 | 1995-08-11 | Sony Corp | パターン形成方法及びその装置 |
| JPH10135099A (ja) * | 1996-10-25 | 1998-05-22 | Sony Corp | 露光装置及び露光方法 |
| JPH10275755A (ja) * | 1997-01-30 | 1998-10-13 | Tokyo Electron Ltd | レジスト塗布現像装置とレジスト塗布現像方法 |
| JPH11274030A (ja) * | 1998-03-20 | 1999-10-08 | Hitachi Ltd | レジスト処理方法および装置ならびにレジスト塗布方法 |
| JP2000082661A (ja) * | 1998-07-02 | 2000-03-21 | Toshiba Corp | 加熱装置,加熱装置の評価法及びパタ―ン形成方法 |
Family Cites Families (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59123321A (ja) * | 1982-12-28 | 1984-07-17 | Toshiba Corp | スイツチ回路 |
| US4631416A (en) | 1983-12-19 | 1986-12-23 | Hewlett-Packard Company | Wafer/mask alignment system using diffraction gratings |
| US5340992A (en) | 1988-02-16 | 1994-08-23 | Canon Kabushiki Kaisha | Apparatus and method of detecting positional relationship using a weighted coefficient |
| US5327221A (en) | 1988-02-16 | 1994-07-05 | Canon Kabushiki Kaisha | Device for detecting positional relationship between two objects |
| US5189494A (en) | 1988-11-07 | 1993-02-23 | Masato Muraki | Position detecting method and apparatus |
| JPH02192114A (ja) | 1989-01-20 | 1990-07-27 | Canon Inc | 位置合わせ装置 |
| US4999014A (en) | 1989-05-04 | 1991-03-12 | Therma-Wave, Inc. | Method and apparatus for measuring thickness of thin films |
| US5042951A (en) | 1989-09-19 | 1991-08-27 | Therma-Wave, Inc. | High resolution ellipsometric apparatus |
| JP2704002B2 (ja) | 1989-07-18 | 1998-01-26 | キヤノン株式会社 | 位置検出方法 |
| US5155336A (en) | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
| US5182610A (en) | 1990-04-19 | 1993-01-26 | Sortec Corporation | Position detecting method and device therefor as well as aligning device |
| US5216257A (en) * | 1990-07-09 | 1993-06-01 | Brueck Steven R J | Method and apparatus for alignment and overlay of submicron lithographic features |
| JPH07509379A (ja) * | 1992-01-09 | 1995-10-19 | アドヴァンスド カーディオヴァスキュラー システムズ インコーポレーテッド | ガイドワイヤ交換装置 |
| US5747813A (en) | 1992-06-16 | 1998-05-05 | Kla-Tencop. Corporation | Broadband microspectro-reflectometer |
| US6153886A (en) | 1993-02-19 | 2000-11-28 | Nikon Corporation | Alignment apparatus in projection exposure apparatus |
| US5316984A (en) | 1993-03-25 | 1994-05-31 | Vlsi Technology, Inc. | Bright field wafer target |
| JP3082516B2 (ja) | 1993-05-31 | 2000-08-28 | キヤノン株式会社 | 光学式変位センサおよび該光学式変位センサを用いた駆動システム |
| US5414514A (en) | 1993-06-01 | 1995-05-09 | Massachusetts Institute Of Technology | On-axis interferometric alignment of plates using the spatial phase of interference patterns |
| US5412473A (en) | 1993-07-16 | 1995-05-02 | Therma-Wave, Inc. | Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices |
| JP3368017B2 (ja) * | 1993-10-29 | 2003-01-20 | キヤノン株式会社 | 位置検出装置及びそれを用いた半導体素子の製造方法 |
| US5516608A (en) | 1994-02-28 | 1996-05-14 | International Business Machines Corporation | Method for controlling a line dimension arising in photolithographic processes |
| WO1996012941A1 (en) | 1994-10-21 | 1996-05-02 | Therma-Wave, Inc. | Spectroscopic ellipsometer |
| KR100197191B1 (ko) | 1994-11-14 | 1999-06-15 | 모리시다 요이치 | 레지스트 패턴 형성방법 |
| JPH08233555A (ja) | 1994-12-28 | 1996-09-13 | Matsushita Electric Ind Co Ltd | レジストパターンの測定方法及びレジストパターンの測定装置 |
| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US5991699A (en) | 1995-05-04 | 1999-11-23 | Kla Instruments Corporation | Detecting groups of defects in semiconductor feature space |
| US5808742A (en) * | 1995-05-31 | 1998-09-15 | Massachusetts Institute Of Technology | Optical alignment apparatus having multiple parallel alignment marks |
| US5581350A (en) | 1995-06-06 | 1996-12-03 | Tencor Instruments | Method and system for calibrating an ellipsometer |
| US5703692A (en) * | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
| US5619548A (en) | 1995-08-11 | 1997-04-08 | Oryx Instruments And Materials Corp. | X-ray thickness gauge |
| JPH0955352A (ja) * | 1995-08-16 | 1997-02-25 | Sony Corp | 露光装置および露光方法 |
| US5801390A (en) | 1996-02-09 | 1998-09-01 | Nikon Corporation | Position-detection method and apparatus with a grating mark |
| JP2861911B2 (ja) * | 1996-02-23 | 1999-02-24 | 日本電気株式会社 | 半導体デバイスのレジストパターンの形成方法 |
| US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
| US6023338A (en) * | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5877859A (en) | 1996-07-24 | 1999-03-02 | Therma-Wave, Inc. | Broadband spectroscopic rotating compensator ellipsometer |
| US5700732A (en) | 1996-08-02 | 1997-12-23 | Micron Technology, Inc. | Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns |
| JP3287236B2 (ja) * | 1996-10-03 | 2002-06-04 | キヤノン株式会社 | 回折光学素子の製作方法 |
| US5917588A (en) | 1996-11-04 | 1999-06-29 | Kla-Tencor Corporation | Automated specimen inspection system for and method of distinguishing features or anomalies under either bright field or dark field illumination |
| US5771094A (en) | 1997-01-29 | 1998-06-23 | Kla-Tencor Corporation | Film measurement system with improved calibration |
| TW389949B (en) | 1997-01-30 | 2000-05-11 | Tokyo Electron Ltd | Method and apparatus for coating and development of the photo-resist solution |
| US5889593A (en) | 1997-02-26 | 1999-03-30 | Kla Instruments Corporation | Optical system and method for angle-dependent reflection or transmission measurement |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US5798837A (en) | 1997-07-11 | 1998-08-25 | Therma-Wave, Inc. | Thin film optical measurement system and method with calibrating ellipsometer |
| EP1012571A1 (en) | 1997-07-11 | 2000-06-28 | Therma-Wave Inc. | An apparatus for analyzing multi-layer thin film stacks on semiconductors |
| US6134011A (en) * | 1997-09-22 | 2000-10-17 | Hdi Instrumentation | Optical measurement system using polarized light |
| JPH11102851A (ja) | 1997-09-26 | 1999-04-13 | Mitsubishi Electric Corp | アライメント補正方法及び半導体装置の製造方法 |
| US5965306A (en) | 1997-10-15 | 1999-10-12 | International Business Machines Corporation | Method of determining the printability of photomask defects |
| US6301011B1 (en) | 1997-11-07 | 2001-10-09 | Xerox Corporation | Dynamic plug and play interface for output device |
| US6110011A (en) | 1997-11-10 | 2000-08-29 | Applied Materials, Inc. | Integrated electrodeposition and chemical-mechanical polishing tool |
| US5877861A (en) * | 1997-11-14 | 1999-03-02 | International Business Machines Corporation | Method for overlay control system |
| JP4109736B2 (ja) * | 1997-11-14 | 2008-07-02 | キヤノン株式会社 | 位置ずれ検出方法 |
| JPH11241908A (ja) | 1997-12-03 | 1999-09-07 | Canon Inc | 位置検出装置及びそれを用いたデバイスの製造方法 |
| US6417922B1 (en) * | 1997-12-29 | 2002-07-09 | Asml Netherlands B.V. | Alignment device and lithographic apparatus comprising such a device |
| KR100474746B1 (ko) | 1998-02-12 | 2005-03-08 | 에이씨엠 리서치, 인코포레이티드 | 도금 장치 및 방법 |
| US6483580B1 (en) | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
| US6476920B1 (en) | 1998-03-18 | 2002-11-05 | Nova Measuring Instruments, Ltd. | Method and apparatus for measurements of patterned structures |
| US5917594A (en) | 1998-04-08 | 1999-06-29 | Kla-Tencor Corporation | Spectroscopic measurement system using an off-axis spherical mirror and refractive elements |
| US6077756A (en) | 1998-04-24 | 2000-06-20 | Vanguard International Semiconductor | Overlay target pattern and algorithm for layer-to-layer overlay metrology for semiconductor processing |
| US6128089A (en) | 1998-07-28 | 2000-10-03 | International Business Machines Corporation | Combined segmented and nonsegmented bar-in-bar targets |
| JP2002528895A (ja) | 1998-10-20 | 2002-09-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 表面に格子と少なくとも部分的に凹部形状のオキサイドパターンとを備えているシリコン基体に半導体装置を製造する方法 |
| US6690473B1 (en) * | 1999-02-01 | 2004-02-10 | Sensys Instruments Corporation | Integrated surface metrology |
| EP1065567A3 (en) | 1999-06-29 | 2001-05-16 | Applied Materials, Inc. | Integrated critical dimension control |
| US6776692B1 (en) | 1999-07-09 | 2004-08-17 | Applied Materials Inc. | Closed-loop control of wafer polishing in a chemical mechanical polishing system |
| US6754305B1 (en) | 1999-08-02 | 2004-06-22 | Therma-Wave, Inc. | Measurement of thin films and barrier layers on patterned wafers with X-ray reflectometry |
| US6259521B1 (en) * | 1999-10-05 | 2001-07-10 | Advanced Micro Devices, Inc. | Method and apparatus for controlling photolithography parameters based on photoresist images |
| JP2001144004A (ja) * | 1999-11-16 | 2001-05-25 | Nikon Corp | 露光方法、露光装置、及びデバイス製造方法 |
| US6484060B1 (en) * | 2000-03-24 | 2002-11-19 | Micron Technology, Inc. | Layout for measurement of overlay error |
| US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| WO2001084382A1 (en) | 2000-05-04 | 2001-11-08 | Kla-Tencor, Inc. | Methods and systems for lithography process control |
| US6462818B1 (en) | 2000-06-22 | 2002-10-08 | Kla-Tencor Corporation | Overlay alignment mark design |
| US20020018217A1 (en) | 2000-08-11 | 2002-02-14 | Michael Weber-Grabau | Optical critical dimension metrology system integrated into semiconductor wafer process tool |
| US6486954B1 (en) | 2000-09-01 | 2002-11-26 | Kla-Tencor Technologies Corporation | Overlay alignment measurement mark |
| IL138552A (en) | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Lateral shift measurement using an optical technique |
| WO2002065545A2 (en) | 2001-02-12 | 2002-08-22 | Sensys Instruments Corporation | Overlay alignment metrology using diffraction gratings |
| US6699624B2 (en) * | 2001-02-27 | 2004-03-02 | Timbre Technologies, Inc. | Grating test patterns and methods for overlay metrology |
| JP2004529330A (ja) | 2001-03-02 | 2004-09-24 | アクセント オプティカル テクノロジーズ,インク. | スキャタロメトリを使用するライン・プロファイルの非対称測定 |
| US20020192577A1 (en) | 2001-06-15 | 2002-12-19 | Bernard Fay | Automated overlay metrology system |
-
2001
- 2001-05-04 WO PCT/US2001/014367 patent/WO2001084382A1/en not_active Ceased
- 2001-05-04 JP JP2001580732A patent/JP2003532306A/ja active Pending
- 2001-05-04 US US09/849,622 patent/US6689519B2/en not_active Expired - Lifetime
-
2003
- 2003-02-14 US US10/366,838 patent/US6987572B2/en not_active Expired - Lifetime
- 2003-03-27 US US10/401,509 patent/US20040005507A1/en not_active Abandoned
-
2006
- 2006-02-01 US US11/345,145 patent/US7462814B2/en not_active Expired - Fee Related
-
2008
- 2008-12-04 US US12/328,123 patent/US7767956B2/en not_active Expired - Fee Related
-
2011
- 2011-08-31 JP JP2011189697A patent/JP6032875B2/ja not_active Expired - Lifetime
-
2012
- 2012-03-29 JP JP2012075834A patent/JP6032913B2/ja not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132318A (ja) * | 1985-12-04 | 1987-06-15 | Canon Inc | 露光装置 |
| JPH0435018A (ja) * | 1990-05-31 | 1992-02-05 | Sony Corp | フォトレジスト塗布手段 |
| JPH04282820A (ja) * | 1991-03-11 | 1992-10-07 | Nippon Telegr & Teleph Corp <Ntt> | パタン形成方法 |
| JPH07211630A (ja) * | 1994-01-26 | 1995-08-11 | Sony Corp | パターン形成方法及びその装置 |
| JPH10135099A (ja) * | 1996-10-25 | 1998-05-22 | Sony Corp | 露光装置及び露光方法 |
| JPH10275755A (ja) * | 1997-01-30 | 1998-10-13 | Tokyo Electron Ltd | レジスト塗布現像装置とレジスト塗布現像方法 |
| JPH11274030A (ja) * | 1998-03-20 | 1999-10-08 | Hitachi Ltd | レジスト処理方法および装置ならびにレジスト塗布方法 |
| JP2000082661A (ja) * | 1998-07-02 | 2000-03-21 | Toshiba Corp | 加熱装置,加熱装置の評価法及びパタ―ン形成方法 |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006895A (ja) * | 2002-05-30 | 2004-01-08 | Agere Systems Inc | スキャタロメトリ識別法を利用したオーバーレイ測定 |
| JP2007517400A (ja) * | 2003-12-24 | 2007-06-28 | ラム リサーチ コーポレーション | 統合又は独立計測を用いる改善されたウェーハ均一性のための処理制御方法及び装置 |
| KR100969636B1 (ko) * | 2003-12-24 | 2010-07-14 | 램 리서치 코포레이션 | 통합 계측법 또는 독립형 계측법을 사용하여 웨이퍼균일성을 개선하기 위한 처리 제어 |
| JP2011228722A (ja) * | 2003-12-24 | 2011-11-10 | Lam Research Corporation | 統合又は単独計測を用いる改善されたウェーハ均一性のための処理制御方法及び装置 |
| JP2009141352A (ja) * | 2007-12-05 | 2009-06-25 | Brion Technologies Inc | リソグラフィプロセスウィンドウをシミュレートするための方法及びシステム |
| US8200468B2 (en) | 2007-12-05 | 2012-06-12 | Asml Netherlands B.V. | Methods and system for lithography process window simulation |
| US9390206B2 (en) | 2007-12-05 | 2016-07-12 | Asml Netherlands B.V. | Methods and systems for lithography process window simulation |
| US8527255B2 (en) | 2007-12-05 | 2013-09-03 | Asml Netherlands B.V. | Methods and systems for lithography process window simulation |
| KR101433391B1 (ko) | 2008-02-25 | 2014-08-26 | 도쿄엘렉트론가부시키가이샤 | 기판의 처리방법, 컴퓨터 기억매체 및 기판처리 시스템 |
| JP2010278204A (ja) * | 2009-05-28 | 2010-12-09 | Oki Semiconductor Co Ltd | レジストパターンの形成方法 |
| JP2014515885A (ja) * | 2011-04-22 | 2014-07-03 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル |
| JP2016219812A (ja) * | 2011-04-22 | 2016-12-22 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル |
| US8856694B2 (en) | 2011-05-25 | 2014-10-07 | Asml Netherlands B.V. | Computational process control |
| JP2016048399A (ja) * | 2011-05-25 | 2016-04-07 | エーエスエムエル ネザーランズ ビー.ブイ. | 計算プロセス制御 |
| JP2012253336A (ja) * | 2011-05-25 | 2012-12-20 | Asml Netherlands Bv | 計算プロセス制御 |
| US10007192B2 (en) | 2011-05-25 | 2018-06-26 | Asml Netherlands B.V. | Computational process control |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001084382A1 (en) | 2001-11-08 |
| US20090079974A1 (en) | 2009-03-26 |
| US6689519B2 (en) | 2004-02-10 |
| US7462814B2 (en) | 2008-12-09 |
| US20020072001A1 (en) | 2002-06-13 |
| US7767956B2 (en) | 2010-08-03 |
| JP2012009890A (ja) | 2012-01-12 |
| US6987572B2 (en) | 2006-01-17 |
| JP6032913B2 (ja) | 2016-11-30 |
| US20060138366A1 (en) | 2006-06-29 |
| US20030148198A1 (en) | 2003-08-07 |
| US20040005507A1 (en) | 2004-01-08 |
| JP6032875B2 (ja) | 2016-11-30 |
| JP2012169638A (ja) | 2012-09-06 |
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