JP6032913B2 - リソグラフィ・プロセス制御のための方法およびシステム - Google Patents
リソグラフィ・プロセス制御のための方法およびシステム Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
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- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
1.発明の分野
本発明は、一般に半導体製造プロセスを評価し、かつ制御するためのシステムおよび方法に関する。一定の実施形態は、レジストの特性を測定し、リソグラフィ・プロセスで必要とされるプロセス・ステップを制御することにより、リソグラフィ・プロセスを評価し、かつ/または制御するためのシステムおよび方法に関する。
半導体製造プロセスは、一般に、半導体デバイスの様々なフィーチャや複数の堆積層を形成するためにいくつかのリソグラフィ・ステップを必要とする。リソグラフィは、一般にウェハと称することがある半導体基板上に形成されたレジストに、パターンを転写することを必要とする。レチクルまたはマスクは、レジストより上方に配置することができ、レジストに転写することができるパターン状に構成された実質的に透明な領域と実質的に不透明な領域とを有する。したがって、レチクルの実質的に不透明な領域は、下にあるレジストの領域をエネルギー源にさらされることから保護することができる。したがって、紫外光、電子線、またはX線源など、エネルギー源にレジストの領域を選択的にさらすことによってレジストにパターン形成することができる。次いで、パターン形成されたレジストを使用して、イオン注入やエッチングなど後続の半導体製造プロセス内で下にある層をマスクすることができる。したがって、レジストは、誘電材料または半導体基板など下にある層をイオンの注入またはエッチングによる除去を実質的に抑止することができる。
本発明の一実施態様は、リソグラフィ・プロセスのクリティカルな測定基準のウェハ内(WIW)変動を低減するための方法に関する。リソグラフィ・プロセスのクリティカルな測定基準には、それだけには限らないが、リソグラフィ・プロセス中に形成されたフィーチャのクリティカル寸法、およびオーバーレイを含むことができる。リソグラフィ・プロセス中に形成されたフィーチャのクリティカル寸法には、たとえばフィーチャの幅、高さ、側壁プロフィルを含むことができる。オーバーレイは、一般に、ウェハのある堆積層上におけるフィーチャの横位置に対する、ウェハの別の堆積層上におけるフィーチャの横位置のことを言う。リソグラフィ・プロセスは、光学リソグラフィ、電子線リソグラフィ、X線リソグラフィを含むことができる。
次いで図面に転じると、図1は、リソグラフィ・プロセスの性能特性を評価し、かつ制御するための方法の一実施形態を示す。たとえば、本発明を使用して、リソグラフィ工程のクリティカルな測定基準のウェハ内(WIW)変動を低減し、さらに最小限に抑えることができる。リソグラフィ・プロセスのクリティカルな測定基準には、それだけには限らないが、リソグラフィ・プロセスによって形成されたフィーチャのクリティカル寸法、およびオーバーレイを含むことができる。リソグラフィ・プロセス中に形成されたフィーチャのクリティカル寸法には、たとえばフィーチャの幅、高さ、側壁プロフィルを含むことができる。フィーチャの側壁プロフィルは、たとえば、ウェハの上部表面に対するフィーチャの側壁角度、フィーチャの側壁の粗さ、およびフィーチャの他の物理特性によって説明することができる。オーバーレイは、一般に、ウェハのある堆積層上におけるフィーチャ横位置に対する、ウェハの別の堆積層上におけるフィーチャの横位置のことを言う。リソグラフィ・プロセスは、光学リソグラフィ、電子線リソグラフィ、X線リソグラフィを含むことができる。
、本明細書で述べた要素に変更を加えることが可能である。
Claims (2)
- 一組のプロセス・モジュールとロボット・ウェハ・ハンドラを含むリソグラフィ・クラスタ・ツールであって、
前記ロボット・ウェハ・ハンドラは、前記リソグラフィ・クラスタ・ツール内に載せられたカセットから前記一組のプロセス・モジュールのうちの1つのプロセス・モジュールにウェハを移動させるように構成される、リソグラフィ・クラスタ・ツールと、
前記リソグラフィ・クラスタ・ツール内に一体化された測定装置であって、露光プロセスを実行する前に、前記ウェハ上の2以上の位置において前記ウェハ上に配置されたレジストの少なくとも1つの特性を測定するために光学技法を用いるように構成され、前記光学技法はスキャタロメータ法を含む、測定装置と、
前記ウェハの第1の部分を、露光後ベーク・プロセスのステップ中に第1の温度条件で加工することができるように、かつ前記ウェハの第2の部分を、そのステップ中に第2の温度条件で加工することができるように、前記少なくとも1つの特性に応答して、前記一組のプロセス・モジュールのうちの露光後ベーク・プロセスのステップを実行するように構成された少なくとも1つのプロセス・モジュールについて、少なくとも1つのパラメータを変更するように構成される制御装置コンピュータであって、前記第1の温度条件は、前記第2の温度条件とは異なる、制御装置コンピュータと、を含むシステムであって、
少なくとも前記1つの特性は厚さであり、
少なくとも前記1つのパラメータは露光後ベーク温度であることを特徴とするシステム。 - リソグラフィ・クラスタ・ツールのプロセス・モジュールから前記リソグラフィ・クラスタ・ツール内に配置された測定装置へウェハをロボット・ウェハ・ハンドラにより移動させるステップと、
前記測定装置により、露光プロセスのステップを実行する前に、前記ウェハ上の2以上の位置においてレジストの少なくとも1つの特性を測定するステップと、
前記ウェハの第1の部分を、前記リソグラフィ・クラスタ・ツールにより実行される露光後ベーク・プロセスのステップ中に第1の温度条件で加工することができるように、かつ前記ウェハの第2の部分を、そのステップ中に第2の温度条件で加工することができるように、前記少なくともその1つの特性に応答して、露光後ベーク・プロセスのステップを実行するように構成された前記リソグラフィ・クラスタ・ツールの少なくとも1つのパラメータを変更するステップと、を含み、
少なくとも前記1つの特性は厚さであり、
少なくとも前記1つのパラメータは露光後ベーク温度であり、
前記第1の温度条件は、前記第2の温度条件とは異なることを特徴とする方法。
Applications Claiming Priority (2)
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US20237200P | 2000-05-04 | 2000-05-04 | |
US60/202,372 | 2000-05-04 |
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JP2011189697A Division JP6032875B2 (ja) | 2000-05-04 | 2011-08-31 | リソグラフィ・プロセス制御のための方法およびシステム |
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JP2012169638A JP2012169638A (ja) | 2012-09-06 |
JP6032913B2 true JP6032913B2 (ja) | 2016-11-30 |
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JP2001580732A Pending JP2003532306A (ja) | 2000-05-04 | 2001-05-04 | リソグラフィ・プロセス制御のための方法およびシステム |
JP2011189697A Expired - Lifetime JP6032875B2 (ja) | 2000-05-04 | 2011-08-31 | リソグラフィ・プロセス制御のための方法およびシステム |
JP2012075834A Expired - Lifetime JP6032913B2 (ja) | 2000-05-04 | 2012-03-29 | リソグラフィ・プロセス制御のための方法およびシステム |
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JP2001580732A Pending JP2003532306A (ja) | 2000-05-04 | 2001-05-04 | リソグラフィ・プロセス制御のための方法およびシステム |
JP2011189697A Expired - Lifetime JP6032875B2 (ja) | 2000-05-04 | 2011-08-31 | リソグラフィ・プロセス制御のための方法およびシステム |
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US (5) | US6689519B2 (ja) |
JP (3) | JP2003532306A (ja) |
WO (1) | WO2001084382A1 (ja) |
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-
2001
- 2001-05-04 US US09/849,622 patent/US6689519B2/en not_active Expired - Lifetime
- 2001-05-04 JP JP2001580732A patent/JP2003532306A/ja active Pending
- 2001-05-04 WO PCT/US2001/014367 patent/WO2001084382A1/en active Application Filing
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2003
- 2003-02-14 US US10/366,838 patent/US6987572B2/en not_active Expired - Lifetime
- 2003-03-27 US US10/401,509 patent/US20040005507A1/en not_active Abandoned
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- 2006-02-01 US US11/345,145 patent/US7462814B2/en not_active Expired - Fee Related
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Also Published As
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WO2001084382A1 (en) | 2001-11-08 |
JP6032875B2 (ja) | 2016-11-30 |
JP2012169638A (ja) | 2012-09-06 |
US6689519B2 (en) | 2004-02-10 |
US20030148198A1 (en) | 2003-08-07 |
US20090079974A1 (en) | 2009-03-26 |
US20040005507A1 (en) | 2004-01-08 |
US20060138366A1 (en) | 2006-06-29 |
US6987572B2 (en) | 2006-01-17 |
US7767956B2 (en) | 2010-08-03 |
JP2003532306A (ja) | 2003-10-28 |
US7462814B2 (en) | 2008-12-09 |
US20020072001A1 (en) | 2002-06-13 |
JP2012009890A (ja) | 2012-01-12 |
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