JP2003520445A - タングステンゲート電極の方法および素子 - Google Patents

タングステンゲート電極の方法および素子

Info

Publication number
JP2003520445A
JP2003520445A JP2001553570A JP2001553570A JP2003520445A JP 2003520445 A JP2003520445 A JP 2003520445A JP 2001553570 A JP2001553570 A JP 2001553570A JP 2001553570 A JP2001553570 A JP 2001553570A JP 2003520445 A JP2003520445 A JP 2003520445A
Authority
JP
Japan
Prior art keywords
tungsten
film
gate electrode
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001553570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003520445A5 (enExample
Inventor
ホセイン，ティモシー・ゼット
ガタック−ロイ，アミヤ・アール
ザノッティ，ジェイソン・ビィ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2003520445A publication Critical patent/JP2003520445A/ja
Publication of JP2003520445A5 publication Critical patent/JP2003520445A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2001553570A 2000-01-21 2000-08-16 タングステンゲート電極の方法および素子 Pending JP2003520445A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/489,169 US6284636B1 (en) 2000-01-21 2000-01-21 Tungsten gate method and apparatus
US09/489,169 2000-01-21
PCT/US2000/022505 WO2001054177A1 (en) 2000-01-21 2000-08-16 Tungsten gate electrode method and device

Publications (2)

Publication Number Publication Date
JP2003520445A true JP2003520445A (ja) 2003-07-02
JP2003520445A5 JP2003520445A5 (enExample) 2007-10-04

Family

ID=23942694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001553570A Pending JP2003520445A (ja) 2000-01-21 2000-08-16 タングステンゲート電極の方法および素子

Country Status (6)

Country Link
US (1) US6284636B1 (enExample)
EP (1) EP1258033B1 (enExample)
JP (1) JP2003520445A (enExample)
KR (1) KR100682643B1 (enExample)
DE (1) DE60037337T2 (enExample)
WO (1) WO2001054177A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548389B2 (en) * 2000-04-03 2003-04-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
DE10123510A1 (de) * 2001-05-15 2002-11-28 Infineon Technologies Ag Herstellungsverfahren für ein Halbleiterbauelement
US6933243B2 (en) * 2002-02-06 2005-08-23 Applied Materials, Inc. High selectivity and residue free process for metal on thin dielectric gate etch application
US6835659B2 (en) * 2002-06-04 2004-12-28 Micron Technology, Inc. Electrical coupling stack and processes for making same
US20040061190A1 (en) 2002-09-30 2004-04-01 International Business Machines Corporation Method and structure for tungsten gate metal surface treatment while preventing oxidation
KR100587686B1 (ko) * 2004-07-15 2006-06-08 삼성전자주식회사 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법
KR100939777B1 (ko) * 2007-11-30 2010-01-29 주식회사 하이닉스반도체 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법
US9034716B2 (en) 2013-01-31 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US20170309490A1 (en) * 2014-09-24 2017-10-26 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
US10861701B2 (en) * 2015-06-29 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0347965A (ja) * 1989-07-13 1991-02-28 Sony Corp 高融点金属膜の形成方法
JPH04340766A (ja) * 1991-05-17 1992-11-27 Seiko Instr Inc 半導体装置およびその製造方法
JPH05315284A (ja) * 1992-05-14 1993-11-26 Sharp Corp コンタクト部形成方法
JPH0637042A (ja) * 1992-07-20 1994-02-10 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH0669498A (ja) * 1992-08-20 1994-03-11 Matsushita Electron Corp 半導体装置およびその製造方法
JPH06291082A (ja) * 1993-04-06 1994-10-18 Nippon Steel Corp 半導体装置及びその製造方法
JPH06291084A (ja) * 1992-09-11 1994-10-18 Inmos Ltd 半導体装置及び半導体装置の中にタングステン接点を製造する方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2061615A (en) 1979-10-25 1981-05-13 Gen Electric Composite conductors for integrated circuits
JPS584975A (ja) 1981-06-30 1983-01-12 Fujitsu Ltd 半導体装置の製造方法
FR2578272B1 (fr) * 1985-03-01 1987-05-22 Centre Nat Rech Scient Procede de formation sur un substrat d'une couche de siliciure de tungstene, utilisable notamment pour la realisation de couches d'interconnexion des circuits integres.
US5223455A (en) 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
US5071788A (en) 1988-02-18 1991-12-10 International Business Machines Corporation Method for depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
US5158903A (en) * 1989-11-01 1992-10-27 Matsushita Electric Industrial Co., Ltd. Method for producing a field-effect type semiconductor device
JPH03218637A (ja) * 1989-11-01 1991-09-26 Matsushita Electric Ind Co Ltd 電界効果型半導体装置とその製造方法
EP0498580A1 (en) 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
JPH07263674A (ja) 1994-03-17 1995-10-13 Fujitsu Ltd 電界効果型半導体装置とその製造方法
US5472896A (en) * 1994-11-14 1995-12-05 United Microelectronics Corp. Method for fabricating polycide gate MOSFET devices
JP2839076B2 (ja) 1995-05-11 1998-12-16 日本電気株式会社 半導体装置およびその製造方法
US5906866A (en) 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5795824A (en) 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films
US6066366A (en) 1998-07-22 2000-05-23 Applied Materials, Inc. Method for depositing uniform tungsten layers by CVD
US6037263A (en) 1998-11-05 2000-03-14 Vanguard International Semiconductor Corporation Plasma enhanced CVD deposition of tungsten and tungsten compounds

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0347965A (ja) * 1989-07-13 1991-02-28 Sony Corp 高融点金属膜の形成方法
JPH04340766A (ja) * 1991-05-17 1992-11-27 Seiko Instr Inc 半導体装置およびその製造方法
JPH05315284A (ja) * 1992-05-14 1993-11-26 Sharp Corp コンタクト部形成方法
JPH0637042A (ja) * 1992-07-20 1994-02-10 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH0669498A (ja) * 1992-08-20 1994-03-11 Matsushita Electron Corp 半導体装置およびその製造方法
JPH06291084A (ja) * 1992-09-11 1994-10-18 Inmos Ltd 半導体装置及び半導体装置の中にタングステン接点を製造する方法
JPH06291082A (ja) * 1993-04-06 1994-10-18 Nippon Steel Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP1258033B1 (en) 2007-12-05
KR100682643B1 (ko) 2007-02-15
DE60037337T2 (de) 2008-11-27
WO2001054177A1 (en) 2001-07-26
EP1258033A1 (en) 2002-11-20
DE60037337D1 (de) 2008-01-17
KR20020071959A (ko) 2002-09-13
US6284636B1 (en) 2001-09-04

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