JP2003519920A - ドライエッチャーの現場制御 - Google Patents

ドライエッチャーの現場制御

Info

Publication number
JP2003519920A
JP2003519920A JP2001550800A JP2001550800A JP2003519920A JP 2003519920 A JP2003519920 A JP 2003519920A JP 2001550800 A JP2001550800 A JP 2001550800A JP 2001550800 A JP2001550800 A JP 2001550800A JP 2003519920 A JP2003519920 A JP 2003519920A
Authority
JP
Japan
Prior art keywords
wafer
processing tool
processing
etching
current state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001550800A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003519920A5 (https=
Inventor
ランスフォ−ド，ジェレミー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2003519920A publication Critical patent/JP2003519920A/ja
Publication of JP2003519920A5 publication Critical patent/JP2003519920A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

Landscapes

  • Drying Of Semiconductors (AREA)
JP2001550800A 2000-01-04 2000-09-06 ドライエッチャーの現場制御 Pending JP2003519920A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/476,875 2000-01-04
US09/476,875 US6485990B1 (en) 2000-01-04 2000-01-04 Feed-forward control of an etch processing tool
PCT/US2000/024423 WO2001050520A1 (en) 2000-01-04 2000-09-06 In-situ contril of a dry etcher

Publications (2)

Publication Number Publication Date
JP2003519920A true JP2003519920A (ja) 2003-06-24
JP2003519920A5 JP2003519920A5 (https=) 2007-10-25

Family

ID=23893611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001550800A Pending JP2003519920A (ja) 2000-01-04 2000-09-06 ドライエッチャーの現場制御

Country Status (5)

Country Link
US (1) US6485990B1 (https=)
EP (1) EP1245040A1 (https=)
JP (1) JP2003519920A (https=)
KR (1) KR100768580B1 (https=)
WO (1) WO2001050520A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109455A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2005109454A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2005109457A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2005109456A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2017500740A (ja) * 2013-12-10 2017-01-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハをダイシングする方法及びそのためのキャリア

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338855A (ja) * 2000-05-30 2001-12-07 Matsushita Electric Ind Co Ltd 先行ウェハ決定方法、測定ウェハ決定方法及びウェハ数調整方法
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US6708075B2 (en) * 2001-11-16 2004-03-16 Advanced Micro Devices Method and apparatus for utilizing integrated metrology data as feed-forward data
KR100939329B1 (ko) * 2002-01-10 2010-01-28 어드밴스드 마이크로 디바이시즈, 인코포레이티드 에이전트 기반 제어 아키텍쳐
US6908807B2 (en) * 2002-03-26 2005-06-21 Micron Technology, Inc. Methods of forming semiconductor constructions
US6853873B1 (en) * 2003-02-21 2005-02-08 Nanometrics Incorporated Enhanced throughput of a metrology tool
TWI229387B (en) * 2004-03-11 2005-03-11 Au Optronics Corp Laser annealing apparatus and laser annealing process
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US7127375B2 (en) * 2004-10-12 2006-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Non-uniformity pattern identification systems and methods thereof
US7846305B2 (en) * 2005-03-01 2010-12-07 Hitachi Global Storage Technologies, Netherlands, B.V. Method and apparatus for increasing uniformity in ion mill process
KR101975795B1 (ko) * 2017-12-20 2019-05-07 주식회사 한화 반구형 공진기 발란싱 장치 및 방법
US10692759B2 (en) * 2018-07-17 2020-06-23 Applied Materials, Inc. Methods for manufacturing an interconnect structure for semiconductor devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929427A (ja) * 1982-08-12 1984-02-16 Nec Corp 半導体装置の生産装置システム
JPS61214430A (ja) * 1985-03-19 1986-09-24 Nippon Gakki Seizo Kk 半導体装置の製法
JPH01239929A (ja) * 1988-03-22 1989-09-25 Sharp Corp ドライエッチング装置
JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
JPH11288921A (ja) * 1998-04-01 1999-10-19 Hitachi Ltd プラズマ処理の終点検出方法及びその装置並びにそれを用いた半導体デバイスの製造方法及びその装置
JPH11354482A (ja) * 1998-06-09 1999-12-24 Sony Corp 洗浄装置及び洗浄方法、並びにエッチング装置及びエッチング方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528438A (en) * 1976-09-16 1985-07-09 Northern Telecom Limited End point control in plasma etching
JPS56125841A (en) 1980-03-07 1981-10-02 Fujitsu Ltd Plasma-etching method
JPH02310921A (ja) 1989-05-26 1990-12-26 Hitachi Ltd 半導体装置の製造方法
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5565114A (en) 1993-03-04 1996-10-15 Tokyo Electron Limited Method and device for detecting the end point of plasma process
US5399229A (en) 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
EP0631305B1 (de) * 1993-06-23 1998-04-15 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Isolationsgrabens in einem Substrat für Smart-Power-Technologien
US5405488A (en) 1993-09-13 1995-04-11 Vlsi Technology, Inc. System and method for plasma etching endpoint detection
US5788869A (en) 1995-11-02 1998-08-04 Digital Equipment Corporation Methodology for in situ etch stop detection and control of plasma etching process and device design to minimize process chamber contamination
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US5871658A (en) 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929427A (ja) * 1982-08-12 1984-02-16 Nec Corp 半導体装置の生産装置システム
JPS61214430A (ja) * 1985-03-19 1986-09-24 Nippon Gakki Seizo Kk 半導体装置の製法
JPH01239929A (ja) * 1988-03-22 1989-09-25 Sharp Corp ドライエッチング装置
JPH10125660A (ja) * 1996-08-29 1998-05-15 Fujitsu Ltd プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
JPH11288921A (ja) * 1998-04-01 1999-10-19 Hitachi Ltd プラズマ処理の終点検出方法及びその装置並びにそれを用いた半導体デバイスの製造方法及びその装置
JPH11354482A (ja) * 1998-06-09 1999-12-24 Sony Corp 洗浄装置及び洗浄方法、並びにエッチング装置及びエッチング方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109455A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2005109454A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2005109457A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2005109456A (ja) * 2003-09-09 2005-04-21 Seiko Instruments Inc 半導体装置の製造方法
JP2017500740A (ja) * 2013-12-10 2017-01-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハをダイシングする方法及びそのためのキャリア

Also Published As

Publication number Publication date
KR20020063297A (ko) 2002-08-01
WO2001050520A1 (en) 2001-07-12
EP1245040A1 (en) 2002-10-02
US6485990B1 (en) 2002-11-26
KR100768580B1 (ko) 2007-10-22

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