KR100768580B1 - 식각 공정 툴에 의해 반도체 웨이퍼를 식각하는 방법 및 시스템과 이에 사용되는 프로그램 저장 장치 - Google Patents

식각 공정 툴에 의해 반도체 웨이퍼를 식각하는 방법 및 시스템과 이에 사용되는 프로그램 저장 장치 Download PDF

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KR100768580B1
KR100768580B1 KR1020027008711A KR20027008711A KR100768580B1 KR 100768580 B1 KR100768580 B1 KR 100768580B1 KR 1020027008711 A KR1020027008711 A KR 1020027008711A KR 20027008711 A KR20027008711 A KR 20027008711A KR 100768580 B1 KR100768580 B1 KR 100768580B1
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wafer
process tool
etching
current state
tool
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KR20020063297A (ko
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랜스포드제레미
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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KR1020027008711A 2000-01-04 2000-09-06 식각 공정 툴에 의해 반도체 웨이퍼를 식각하는 방법 및 시스템과 이에 사용되는 프로그램 저장 장치 Expired - Fee Related KR100768580B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/476,875 2000-01-04
US09/476,875 US6485990B1 (en) 2000-01-04 2000-01-04 Feed-forward control of an etch processing tool

Publications (2)

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KR20020063297A KR20020063297A (ko) 2002-08-01
KR100768580B1 true KR100768580B1 (ko) 2007-10-22

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KR1020027008711A Expired - Fee Related KR100768580B1 (ko) 2000-01-04 2000-09-06 식각 공정 툴에 의해 반도체 웨이퍼를 식각하는 방법 및 시스템과 이에 사용되는 프로그램 저장 장치

Country Status (5)

Country Link
US (1) US6485990B1 (https=)
EP (1) EP1245040A1 (https=)
JP (1) JP2003519920A (https=)
KR (1) KR100768580B1 (https=)
WO (1) WO2001050520A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101975795B1 (ko) * 2017-12-20 2019-05-07 주식회사 한화 반구형 공진기 발란싱 장치 및 방법

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JP2001338855A (ja) * 2000-05-30 2001-12-07 Matsushita Electric Ind Co Ltd 先行ウェハ決定方法、測定ウェハ決定方法及びウェハ数調整方法
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US6708075B2 (en) * 2001-11-16 2004-03-16 Advanced Micro Devices Method and apparatus for utilizing integrated metrology data as feed-forward data
KR100939329B1 (ko) * 2002-01-10 2010-01-28 어드밴스드 마이크로 디바이시즈, 인코포레이티드 에이전트 기반 제어 아키텍쳐
US6908807B2 (en) * 2002-03-26 2005-06-21 Micron Technology, Inc. Methods of forming semiconductor constructions
US6853873B1 (en) * 2003-02-21 2005-02-08 Nanometrics Incorporated Enhanced throughput of a metrology tool
JP4732726B2 (ja) * 2003-09-09 2011-07-27 セイコーインスツル株式会社 半導体装置の製造方法
JP4880889B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
JP4880890B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
JP4880888B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
TWI229387B (en) * 2004-03-11 2005-03-11 Au Optronics Corp Laser annealing apparatus and laser annealing process
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US7127375B2 (en) * 2004-10-12 2006-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Non-uniformity pattern identification systems and methods thereof
US7846305B2 (en) * 2005-03-01 2010-12-07 Hitachi Global Storage Technologies, Netherlands, B.V. Method and apparatus for increasing uniformity in ion mill process
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
US10692759B2 (en) * 2018-07-17 2020-06-23 Applied Materials, Inc. Methods for manufacturing an interconnect structure for semiconductor devices

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US5496765A (en) * 1993-06-23 1996-03-05 Siemens Aktiengesellschaft Method for manufacturing an insulating trench in a substrate for smart-power technologies
US5871658A (en) * 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers

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US4528438A (en) * 1976-09-16 1985-07-09 Northern Telecom Limited End point control in plasma etching
JPS56125841A (en) 1980-03-07 1981-10-02 Fujitsu Ltd Plasma-etching method
JPS5929427A (ja) * 1982-08-12 1984-02-16 Nec Corp 半導体装置の生産装置システム
JPS61214430A (ja) * 1985-03-19 1986-09-24 Nippon Gakki Seizo Kk 半導体装置の製法
JPH01239929A (ja) * 1988-03-22 1989-09-25 Sharp Corp ドライエッチング装置
JPH02310921A (ja) 1989-05-26 1990-12-26 Hitachi Ltd 半導体装置の製造方法
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5565114A (en) 1993-03-04 1996-10-15 Tokyo Electron Limited Method and device for detecting the end point of plasma process
US5399229A (en) 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
US5405488A (en) 1993-09-13 1995-04-11 Vlsi Technology, Inc. System and method for plasma etching endpoint detection
US5788869A (en) 1995-11-02 1998-08-04 Digital Equipment Corporation Methodology for in situ etch stop detection and control of plasma etching process and device design to minimize process chamber contamination
JP3630931B2 (ja) * 1996-08-29 2005-03-23 富士通株式会社 プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
JP4041579B2 (ja) * 1998-04-01 2008-01-30 株式会社ルネサステクノロジ プラズマ処理の終点検出方法及びそれを用いた半導体デバイスの製造方法
JPH11354482A (ja) * 1998-06-09 1999-12-24 Sony Corp 洗浄装置及び洗浄方法、並びにエッチング装置及びエッチング方法

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Publication number Priority date Publication date Assignee Title
US5496765A (en) * 1993-06-23 1996-03-05 Siemens Aktiengesellschaft Method for manufacturing an insulating trench in a substrate for smart-power technologies
US5871658A (en) * 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101975795B1 (ko) * 2017-12-20 2019-05-07 주식회사 한화 반구형 공진기 발란싱 장치 및 방법

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KR20020063297A (ko) 2002-08-01
WO2001050520A1 (en) 2001-07-12
EP1245040A1 (en) 2002-10-02
JP2003519920A (ja) 2003-06-24
US6485990B1 (en) 2002-11-26

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