JP2003338458A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003338458A5 JP2003338458A5 JP2003101055A JP2003101055A JP2003338458A5 JP 2003338458 A5 JP2003338458 A5 JP 2003338458A5 JP 2003101055 A JP2003101055 A JP 2003101055A JP 2003101055 A JP2003101055 A JP 2003101055A JP 2003338458 A5 JP2003338458 A5 JP 2003338458A5
- Authority
- JP
- Japan
- Prior art keywords
- polymer layer
- etching
- layer
- polymer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 claims 20
- 238000000034 method Methods 0.000 claims 16
- 238000005530 etching Methods 0.000 claims 10
- 238000001459 lithography Methods 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 239000002861 polymer material Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/133,605 | 2002-04-25 | ||
| US10/133,605 US6673714B2 (en) | 2002-04-25 | 2002-04-25 | Method of fabricating a sub-lithographic sized via |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003338458A JP2003338458A (ja) | 2003-11-28 |
| JP2003338458A5 true JP2003338458A5 (https=) | 2005-08-04 |
Family
ID=29215620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003101055A Pending JP2003338458A (ja) | 2002-04-25 | 2003-04-04 | サブリソグラフィサイズのバイアをつくる方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6673714B2 (https=) |
| EP (1) | EP1359609B1 (https=) |
| JP (1) | JP2003338458A (https=) |
| CN (1) | CN1453640A (https=) |
| DE (1) | DE60301295T2 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916511B2 (en) * | 2002-10-24 | 2005-07-12 | Hewlett-Packard Development Company, L.P. | Method of hardening a nano-imprinting stamp |
| US7384727B2 (en) * | 2003-06-26 | 2008-06-10 | Micron Technology, Inc. | Semiconductor processing patterning methods |
| US7026243B2 (en) * | 2003-10-20 | 2006-04-11 | Micron Technology, Inc. | Methods of forming conductive material silicides by reaction of metal with silicon |
| US6969677B2 (en) * | 2003-10-20 | 2005-11-29 | Micron Technology, Inc. | Methods of forming conductive metal silicides by reaction of metal with silicon |
| US7060625B2 (en) * | 2004-01-27 | 2006-06-13 | Hewlett-Packard Development Company, L.P. | Imprint stamp |
| US7462292B2 (en) * | 2004-01-27 | 2008-12-09 | Hewlett-Packard Development Company, L.P. | Silicon carbide imprint stamp |
| US7153769B2 (en) * | 2004-04-08 | 2006-12-26 | Micron Technology, Inc. | Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon |
| US7241705B2 (en) * | 2004-09-01 | 2007-07-10 | Micron Technology, Inc. | Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects |
| DE102005008478B3 (de) | 2005-02-24 | 2006-10-26 | Infineon Technologies Ag | Verfahren zur Herstellung von sublithographischen Strukturen |
| KR100869359B1 (ko) * | 2006-09-28 | 2008-11-19 | 주식회사 하이닉스반도체 | 반도체 소자의 리세스 게이트 제조 방법 |
| JP5349404B2 (ja) * | 2010-05-28 | 2013-11-20 | 株式会社東芝 | パターン形成方法 |
| WO2012076207A1 (en) * | 2010-12-08 | 2012-06-14 | Asml Holding N.V. | Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp |
| US11175582B2 (en) * | 2015-12-30 | 2021-11-16 | Fujifilm Electronic Materials U.S.A., Inc. | Photosensitive stacked structure |
| CN109065445B (zh) * | 2018-07-13 | 2020-10-09 | 上海华力集成电路制造有限公司 | 金属栅极结构的制造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58130575A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 電界効果トランジスタの製造方法 |
| JPS6229175A (ja) * | 1985-07-29 | 1987-02-07 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型トランジスタの製造方法 |
| US4670090A (en) * | 1986-01-23 | 1987-06-02 | Rockwell International Corporation | Method for producing a field effect transistor |
| EP0252179B1 (en) * | 1986-07-11 | 1992-05-27 | International Business Machines Corporation | Process for producing undercut mask profiles |
| US4711701A (en) * | 1986-09-16 | 1987-12-08 | Texas Instruments Incorporated | Self-aligned transistor method |
| US4808545A (en) * | 1987-04-20 | 1989-02-28 | International Business Machines Corporation | High speed GaAs MESFET having refractory contacts and a self-aligned cold gate fabrication process |
| DE3879186D1 (de) * | 1988-04-19 | 1993-04-15 | Ibm | Verfahren zur herstellung von integrierten halbleiterstrukturen welche feldeffekttransistoren mit kanallaengen im submikrometerbereich enthalten. |
| KR910005400B1 (ko) * | 1988-09-05 | 1991-07-29 | 재단법인 한국전자통신연구소 | 다층레지스트를 이용한 자기정합형 갈륨비소 전계효과트랜지스터의 제조방법 |
| JPH06267843A (ja) * | 1993-03-10 | 1994-09-22 | Hitachi Ltd | パターン形成方法 |
| KR0146246B1 (ko) * | 1994-09-26 | 1998-11-02 | 김주용 | 반도체 소자 콘택 제조방법 |
| US5976920A (en) * | 1996-07-22 | 1999-11-02 | The United States Of America As Represented By The Secretary Of The Air Force | Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) |
| US6036875A (en) * | 1997-02-20 | 2000-03-14 | Advanced Micro Devices, Inc. | Method for manufacturing a semiconductor device with ultra-fine line geometry |
-
2002
- 2002-04-25 US US10/133,605 patent/US6673714B2/en not_active Expired - Lifetime
-
2003
- 2003-04-04 JP JP2003101055A patent/JP2003338458A/ja active Pending
- 2003-04-22 DE DE60301295T patent/DE60301295T2/de not_active Expired - Lifetime
- 2003-04-22 EP EP03252512A patent/EP1359609B1/en not_active Expired - Lifetime
- 2003-04-25 CN CN03122426A patent/CN1453640A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5618383A (en) | Narrow lateral dimensioned microelectronic structures and method of forming the same | |
| CN102239541B (zh) | 制造衬底的方法 | |
| JP2003338458A5 (https=) | ||
| JP7357846B2 (ja) | ルテニウムハードマスクプロセス | |
| KR101564474B1 (ko) | 고밀도 패턴 형성 방법 | |
| US20040180551A1 (en) | Carbon hard mask for aluminum interconnect fabrication | |
| US4472237A (en) | Reactive ion etching of tantalum and silicon | |
| JP2004519838A (ja) | 窒化チタンをエッチングする方法 | |
| EP1359609B1 (en) | Method of fabricating a sub-lithographic sized via | |
| TW417165B (en) | Manufacturing method for reducing the critical dimension of the wire and gap | |
| CN108574010A (zh) | 半导体结构及其形成方法 | |
| CN111095584A (zh) | 使用多层堆叠制造器件 | |
| JPH11214369A (ja) | 半導体装置の白金膜蝕刻方法 | |
| US4937643A (en) | Devices having tantalum silicide structures | |
| JPH06275574A (ja) | ドライエッチング方法 | |
| JP6123242B2 (ja) | パターン形成方法 | |
| CN115568276B (zh) | 量子器件的制备方法、超导电路及量子芯片 | |
| JP2001230233A (ja) | 半導体装置の製造方法 | |
| JP3941629B2 (ja) | 金属配線のエッチング方法 | |
| KR100934981B1 (ko) | 반도체 소자의 미세 패턴 형성 방법 | |
| JP2989956B2 (ja) | 半導体装置の製造方法 | |
| JP2778127B2 (ja) | 半導体装置の製造方法 | |
| JP2023550907A (ja) | ピラーセルＰＣＭ用のｉｎ－ｓｉｔｕドリフト緩和ライナ | |
| JP2002299705A (ja) | 微小面積トンネル接合の作製方法 | |
| JPH07297281A (ja) | 接続孔の製造方法 |