JP2003243538A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JP2003243538A
JP2003243538A JP2002034651A JP2002034651A JP2003243538A JP 2003243538 A JP2003243538 A JP 2003243538A JP 2002034651 A JP2002034651 A JP 2002034651A JP 2002034651 A JP2002034651 A JP 2002034651A JP 2003243538 A JP2003243538 A JP 2003243538A
Authority
JP
Japan
Prior art keywords
power supply
wiring
semiconductor integrated
integrated circuit
side power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002034651A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003243538A5 (enExample
Inventor
Hiroshi Toyoshima
博 豊嶋
Atsuhiro Hayashi
厚宏 林
Takemi Negishi
剛己 根岸
Takashi Uehara
高志 上原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi Ltd
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi ULSI Systems Co Ltd filed Critical Hitachi Ltd
Priority to JP2002034651A priority Critical patent/JP2003243538A/ja
Priority to TW092101497A priority patent/TWI277196B/zh
Priority to US10/355,006 priority patent/US6835971B2/en
Priority to CNB031038131A priority patent/CN100334724C/zh
Priority to KR10-2003-0008737A priority patent/KR20030068436A/ko
Publication of JP2003243538A publication Critical patent/JP2003243538A/ja
Publication of JP2003243538A5 publication Critical patent/JP2003243538A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
    • H01L2224/05027—Disposition the internal layer being disposed in a recess of the surface the internal layer extending out of an opening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Static Random-Access Memory (AREA)
JP2002034651A 2002-02-12 2002-02-12 半導体集積回路装置 Pending JP2003243538A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002034651A JP2003243538A (ja) 2002-02-12 2002-02-12 半導体集積回路装置
TW092101497A TWI277196B (en) 2002-02-12 2003-01-23 Semiconductor integrated circuit apparatus
US10/355,006 US6835971B2 (en) 2002-02-12 2003-01-31 Semiconductor integrated circuit device with a plurality of limiter circuits
CNB031038131A CN100334724C (zh) 2002-02-12 2003-02-12 半导体集成电路器件
KR10-2003-0008737A KR20030068436A (ko) 2002-02-12 2003-02-12 반도체 집적회로 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002034651A JP2003243538A (ja) 2002-02-12 2002-02-12 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2003243538A true JP2003243538A (ja) 2003-08-29
JP2003243538A5 JP2003243538A5 (enExample) 2005-08-25

Family

ID=27654923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002034651A Pending JP2003243538A (ja) 2002-02-12 2002-02-12 半導体集積回路装置

Country Status (5)

Country Link
US (1) US6835971B2 (enExample)
JP (1) JP2003243538A (enExample)
KR (1) KR20030068436A (enExample)
CN (1) CN100334724C (enExample)
TW (1) TWI277196B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066898A (ja) * 2004-07-26 2006-03-09 System Fabrication Technologies Inc 半導体装置
JP2007207301A (ja) * 2006-01-31 2007-08-16 Ricoh Co Ltd 半導体記憶装置
JP2010192013A (ja) * 2009-02-16 2010-09-02 Panasonic Corp 半導体集積回路
US8065535B2 (en) 2005-11-14 2011-11-22 Renesas Electronics Corporation Semiconductor integrated circuit for minimizing a deviation of an internal power supply from a desired value
CN102749518A (zh) * 2011-04-22 2012-10-24 财团法人交大思源基金会 凸块接点的电阻测量结构及包含其的封装基板

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264256A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体装置
DE102004015654A1 (de) * 2003-04-02 2004-10-21 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Endstufe zum Ansteuern einer elektrischen Maschine
US7423343B2 (en) * 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP4904670B2 (ja) * 2004-06-02 2012-03-28 富士通セミコンダクター株式会社 半導体装置
JP4674850B2 (ja) * 2005-02-25 2011-04-20 ルネサスエレクトロニクス株式会社 半導体装置
US7313775B2 (en) * 2005-04-06 2007-12-25 Lsi Corporation Integrated circuit with relocatable processor hardmac
CN102931167A (zh) * 2012-10-25 2013-02-13 上海新储集成电路有限公司 一种在堆叠芯片之间传输驱动大电流信号的方法
JP2020145231A (ja) * 2019-03-04 2020-09-10 キオクシア株式会社 半導体装置およびその製造方法
TWI822006B (zh) * 2022-04-22 2023-11-11 創意電子股份有限公司 捕獲電阻電壓降的分析器以及其分析方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3285919B2 (ja) 1992-02-05 2002-05-27 株式会社東芝 半導体装置
JP3362545B2 (ja) 1995-03-09 2003-01-07 ソニー株式会社 半導体装置の製造方法
US5547740A (en) * 1995-03-23 1996-08-20 Delco Electronics Corporation Solderable contacts for flip chip integrated circuit devices
JP2780674B2 (ja) * 1995-06-20 1998-07-30 日本電気株式会社 不揮発性半導体記憶装置
US5654860A (en) * 1995-08-16 1997-08-05 Micron Technology, Inc. Well resistor for ESD protection of CMOS circuits
JPH10149699A (ja) * 1996-11-18 1998-06-02 Mitsubishi Electric Corp 半導体回路装置
US5946236A (en) * 1997-03-31 1999-08-31 Sanyo Electric Co., Ltd. Non-volatile semiconductor memory device and method for writing information therein
JP3389856B2 (ja) * 1998-03-24 2003-03-24 日本電気株式会社 半導体装置
JP3727191B2 (ja) * 1999-02-18 2005-12-14 松下電器産業株式会社 半導体記憶装置
JP2002539611A (ja) * 1999-03-09 2002-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性メモリを有する半導体装置
US6483176B2 (en) * 1999-12-22 2002-11-19 Kabushiki Kaisha Toshiba Semiconductor with multilayer wiring structure that offer high speed performance
JP4058234B2 (ja) * 1999-12-22 2008-03-05 株式会社東芝 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066898A (ja) * 2004-07-26 2006-03-09 System Fabrication Technologies Inc 半導体装置
US8065535B2 (en) 2005-11-14 2011-11-22 Renesas Electronics Corporation Semiconductor integrated circuit for minimizing a deviation of an internal power supply from a desired value
US8438406B2 (en) 2005-11-14 2013-05-07 Renesas Electronics Corporation Semiconductor integrated circuit for minimizing a deviation of an internal power supply from a desired value
JP2007207301A (ja) * 2006-01-31 2007-08-16 Ricoh Co Ltd 半導体記憶装置
JP2010192013A (ja) * 2009-02-16 2010-09-02 Panasonic Corp 半導体集積回路
CN102749518A (zh) * 2011-04-22 2012-10-24 财团法人交大思源基金会 凸块接点的电阻测量结构及包含其的封装基板

Also Published As

Publication number Publication date
US20030151100A1 (en) 2003-08-14
CN1438703A (zh) 2003-08-27
KR20030068436A (ko) 2003-08-21
TW200305271A (en) 2003-10-16
CN100334724C (zh) 2007-08-29
US6835971B2 (en) 2004-12-28
TWI277196B (en) 2007-03-21

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