JP2003187591A5 - - Google Patents

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Publication number
JP2003187591A5
JP2003187591A5 JP2001381412A JP2001381412A JP2003187591A5 JP 2003187591 A5 JP2003187591 A5 JP 2003187591A5 JP 2001381412 A JP2001381412 A JP 2001381412A JP 2001381412 A JP2001381412 A JP 2001381412A JP 2003187591 A5 JP2003187591 A5 JP 2003187591A5
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JP
Japan
Prior art keywords
block
circuit
cell array
address
redundant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001381412A
Other languages
English (en)
Japanese (ja)
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JP2003187591A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001381412A priority Critical patent/JP2003187591A/ja
Priority claimed from JP2001381412A external-priority patent/JP2003187591A/ja
Priority to CNB021560714A priority patent/CN1267997C/zh
Priority to US10/318,020 priority patent/US6707733B2/en
Priority to EP02028008A priority patent/EP1320105B1/en
Priority to DE60215291T priority patent/DE60215291T2/de
Priority to KR10-2002-0079761A priority patent/KR100470371B1/ko
Publication of JP2003187591A publication Critical patent/JP2003187591A/ja
Publication of JP2003187591A5 publication Critical patent/JP2003187591A5/ja
Pending legal-status Critical Current

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JP2001381412A 2001-12-14 2001-12-14 半導体記憶装置 Pending JP2003187591A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001381412A JP2003187591A (ja) 2001-12-14 2001-12-14 半導体記憶装置
CNB021560714A CN1267997C (zh) 2001-12-14 2002-12-13 半导体存储器件
US10/318,020 US6707733B2 (en) 2001-12-14 2002-12-13 Semiconductor memory device
EP02028008A EP1320105B1 (en) 2001-12-14 2002-12-13 Semiconductor memory device
DE60215291T DE60215291T2 (de) 2001-12-14 2002-12-13 Halbleiter Speicheranordnung
KR10-2002-0079761A KR100470371B1 (ko) 2001-12-14 2002-12-13 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001381412A JP2003187591A (ja) 2001-12-14 2001-12-14 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003187591A JP2003187591A (ja) 2003-07-04
JP2003187591A5 true JP2003187591A5 (enExample) 2005-07-21

Family

ID=19187333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001381412A Pending JP2003187591A (ja) 2001-12-14 2001-12-14 半導体記憶装置

Country Status (6)

Country Link
US (1) US6707733B2 (enExample)
EP (1) EP1320105B1 (enExample)
JP (1) JP2003187591A (enExample)
KR (1) KR100470371B1 (enExample)
CN (1) CN1267997C (enExample)
DE (1) DE60215291T2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235122B2 (ja) * 2004-02-06 2009-03-11 シャープ株式会社 半導体記憶装置及び半導体記憶装置のテスト方法
US7085180B2 (en) * 2004-02-12 2006-08-01 International Business Machines Corporation Method and structure for enabling a redundancy allocation during a multi-bank operation
JP4722123B2 (ja) * 2005-02-23 2011-07-13 スパンション エルエルシー 記憶装置の冗長設定方法、および記憶装置
US7447066B2 (en) * 2005-11-08 2008-11-04 Sandisk Corporation Memory with retargetable memory cell redundancy
JP5131348B2 (ja) * 2008-03-19 2013-01-30 富士通セミコンダクター株式会社 半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法
KR101600280B1 (ko) 2014-05-28 2016-03-21 주식회사 피델릭스 사용중에 발생되는 결함을 효율적으로 리페어할 수 있는 플래시 메모리 장치 및 그의 리페어 방법
US20160012916A1 (en) * 2014-07-10 2016-01-14 Kabushiki Kaisha Toshiba Semiconductor memory device and memory system
US9741421B1 (en) * 2016-04-05 2017-08-22 Micron Technology, Inc. Refresh circuitry
JP7171286B2 (ja) * 2018-07-20 2022-11-15 ラピスセミコンダクタ株式会社 半導体メモリ装置
JP7112904B2 (ja) * 2018-07-20 2022-08-04 ラピスセミコンダクタ株式会社 半導体メモリのテスト方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3019869B2 (ja) * 1990-10-16 2000-03-13 富士通株式会社 半導体メモリ
JP2001052495A (ja) * 1999-06-03 2001-02-23 Toshiba Corp 半導体メモリ
JP2002015593A (ja) * 2000-06-27 2002-01-18 Toshiba Corp 半導体記憶装置
US6552939B1 (en) * 2001-10-15 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having disturb test circuit

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