JP2003168784A5 - - Google Patents

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Publication number
JP2003168784A5
JP2003168784A5 JP2001367753A JP2001367753A JP2003168784A5 JP 2003168784 A5 JP2003168784 A5 JP 2003168784A5 JP 2001367753 A JP2001367753 A JP 2001367753A JP 2001367753 A JP2001367753 A JP 2001367753A JP 2003168784 A5 JP2003168784 A5 JP 2003168784A5
Authority
JP
Japan
Prior art keywords
wiring
random access
access memory
magnetic random
tmr elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001367753A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003168784A (ja
JP3906067B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001367753A external-priority patent/JP3906067B2/ja
Priority to JP2001367753A priority Critical patent/JP3906067B2/ja
Priority to TW091133714A priority patent/TWI241585B/zh
Priority to CNB021524564A priority patent/CN1242411C/zh
Priority to US10/306,404 priority patent/US6760250B2/en
Priority to KR10-2002-0075227A priority patent/KR100509528B1/ko
Publication of JP2003168784A publication Critical patent/JP2003168784A/ja
Priority to US10/847,624 priority patent/US6822896B2/en
Publication of JP2003168784A5 publication Critical patent/JP2003168784A5/ja
Publication of JP3906067B2 publication Critical patent/JP3906067B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001367753A 2001-11-30 2001-11-30 磁気ランダムアクセスメモリ Expired - Fee Related JP3906067B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001367753A JP3906067B2 (ja) 2001-11-30 2001-11-30 磁気ランダムアクセスメモリ
TW091133714A TWI241585B (en) 2001-11-30 2002-11-19 Magnetic random access memory
CNB021524564A CN1242411C (zh) 2001-11-30 2002-11-28 磁性随机访问存储器
KR10-2002-0075227A KR100509528B1 (ko) 2001-11-30 2002-11-29 자기 랜덤 액세스 메모리
US10/306,404 US6760250B2 (en) 2001-11-30 2002-11-29 Magnetic random access memory
US10/847,624 US6822896B2 (en) 2001-11-30 2004-05-18 Magnetic random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001367753A JP3906067B2 (ja) 2001-11-30 2001-11-30 磁気ランダムアクセスメモリ

Publications (3)

Publication Number Publication Date
JP2003168784A JP2003168784A (ja) 2003-06-13
JP2003168784A5 true JP2003168784A5 (enExample) 2004-10-14
JP3906067B2 JP3906067B2 (ja) 2007-04-18

Family

ID=19177456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001367753A Expired - Fee Related JP3906067B2 (ja) 2001-11-30 2001-11-30 磁気ランダムアクセスメモリ

Country Status (5)

Country Link
US (2) US6760250B2 (enExample)
JP (1) JP3906067B2 (enExample)
KR (1) KR100509528B1 (enExample)
CN (1) CN1242411C (enExample)
TW (1) TWI241585B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294191A (ja) * 2005-04-14 2006-10-26 Toshiba Corp 磁気ランダムアクセスメモリのデータ読み出し方法
US8372661B2 (en) 2007-10-31 2013-02-12 Magic Technologies, Inc. High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
US10622047B2 (en) * 2018-03-23 2020-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894447A (en) * 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure
DE19853447A1 (de) 1998-11-19 2000-05-25 Siemens Ag Magnetischer Speicher
DE10020128A1 (de) * 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
CN100358047C (zh) * 2001-11-30 2007-12-26 株式会社东芝 磁随机存取存储器
JP3875568B2 (ja) * 2002-02-05 2007-01-31 株式会社東芝 半導体装置及びその製造方法
JP4646485B2 (ja) * 2002-06-25 2011-03-09 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置

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