JP2003124084A5 - - Google Patents

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Publication number
JP2003124084A5
JP2003124084A5 JP2001313918A JP2001313918A JP2003124084A5 JP 2003124084 A5 JP2003124084 A5 JP 2003124084A5 JP 2001313918 A JP2001313918 A JP 2001313918A JP 2001313918 A JP2001313918 A JP 2001313918A JP 2003124084 A5 JP2003124084 A5 JP 2003124084A5
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JP
Japan
Prior art keywords
processing
main body
apparatus main
processing apparatus
controller
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001313918A
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English (en)
Japanese (ja)
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JP2003124084A (ja
JP4068327B2 (ja
Filing date
Publication date
Priority claimed from JP2001313918A external-priority patent/JP4068327B2/ja
Priority to JP2001313918A priority Critical patent/JP4068327B2/ja
Application filed filed Critical
Priority to PCT/JP2002/010436 priority patent/WO2003034474A1/ja
Priority to CNB028033841A priority patent/CN1271679C/zh
Priority to KR10-2003-7008800A priority patent/KR100529664B1/ko
Priority to EP02779906A priority patent/EP1437763A4/en
Priority to TW91123440A priority patent/TW574725B/zh
Publication of JP2003124084A publication Critical patent/JP2003124084A/ja
Priority to US10/457,353 priority patent/US7082346B2/en
Publication of JP2003124084A5 publication Critical patent/JP2003124084A5/ja
Priority to US11/444,454 priority patent/US20060217830A1/en
Publication of JP4068327B2 publication Critical patent/JP4068327B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001313918A 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法 Expired - Fee Related JP4068327B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001313918A JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法
PCT/JP2002/010436 WO2003034474A1 (fr) 2001-10-11 2002-10-08 Appareil de fabrication d'un semi-conducteur et procede de fabrication d'un dispositif semi-conducteur
CNB028033841A CN1271679C (zh) 2001-10-11 2002-10-08 半导体制造装置以及半导体器件制造方法
KR10-2003-7008800A KR100529664B1 (ko) 2001-10-11 2002-10-08 반도체 제조 장치와 반도체 장치의 제조 방법
EP02779906A EP1437763A4 (en) 2001-10-11 2002-10-08 SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
TW91123440A TW574725B (en) 2001-10-11 2002-10-11 Semiconductor manufacturing device and method for manufacturing a semiconductor
US10/457,353 US7082346B2 (en) 2001-10-11 2003-06-10 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
US11/444,454 US20060217830A1 (en) 2001-10-11 2006-06-01 Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001313918A JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003124084A JP2003124084A (ja) 2003-04-25
JP2003124084A5 true JP2003124084A5 (enExample) 2004-12-16
JP4068327B2 JP4068327B2 (ja) 2008-03-26

Family

ID=19132313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001313918A Expired - Fee Related JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法

Country Status (7)

Country Link
US (2) US7082346B2 (enExample)
EP (1) EP1437763A4 (enExample)
JP (1) JP4068327B2 (enExample)
KR (1) KR100529664B1 (enExample)
CN (1) CN1271679C (enExample)
TW (1) TW574725B (enExample)
WO (1) WO2003034474A1 (enExample)

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JP4008899B2 (ja) * 2003-09-08 2007-11-14 株式会社東芝 半導体装置の製造システムおよび半導体装置の製造方法
JP4880889B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
JP5165907B2 (ja) * 2007-03-06 2013-03-21 株式会社東芝 成膜形状シミュレーション方法及び電子デバイスの製造方法
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9461153B2 (en) 2011-11-16 2016-10-04 Skyworks Solutions, Inc. Devices and methods related to a barrier for metallization of a gallium based semiconductor
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
KR101920870B1 (ko) * 2017-09-15 2018-11-21 한국과학기술연구원 박막의 전기광학적 특성 비접촉식 측정 시스템 및 방법
US11894220B2 (en) 2019-07-17 2024-02-06 Applied Materials, Inc. Method and apparatus for controlling a processing reactor
JP7271403B2 (ja) * 2019-11-26 2023-05-11 エア・ウォーター株式会社 成膜装置および成膜装置の使用方法
KR20220141133A (ko) 2021-04-12 2022-10-19 주식회사 번영중공업 풍력발전기 날개의 저항 시험용 알루미늄 선박

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JPS58182217A (ja) * 1982-04-19 1983-10-25 Oki Electric Ind Co Ltd 薄膜形成方法
JP2634595B2 (ja) * 1987-06-22 1997-07-30 株式会社日立製作所 半導体製造装置
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5062446A (en) * 1991-01-07 1991-11-05 Sematech, Inc. Intelligent mass flow controller
JPH0855145A (ja) 1994-08-08 1996-02-27 Fujitsu Ltd 半導体プロセスシミュレーション方法及びそのための装置
JPH08172084A (ja) * 1994-12-19 1996-07-02 Kokusai Electric Co Ltd 半導体成膜方法及びその装置
JPH0917705A (ja) * 1995-06-28 1997-01-17 Tokyo Electron Ltd 連続熱処理方法
KR0165470B1 (ko) * 1995-11-08 1999-02-01 김광호 반도체 소자의 박막형성 프로그램의 자동보정 시스템
JP3768575B2 (ja) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置及びチャンバ内のクリーニングの方法
US5994209A (en) * 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US6240330B1 (en) 1997-05-28 2001-05-29 International Business Machines Corporation Method for feedforward corrections for off-specification conditions
US6161054A (en) * 1997-09-22 2000-12-12 On-Line Technologies, Inc. Cell control method and apparatus
JPH11288856A (ja) 1998-04-06 1999-10-19 Sony Corp 半導体シミュレーション方法
US6137112A (en) * 1998-09-10 2000-10-24 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
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US6913938B2 (en) * 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US6772034B1 (en) * 2001-07-12 2004-08-03 Advanced Micro Devices, Inc. System and software for data distribution in semiconductor manufacturing and method thereof

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