JP2017183487A5 - - Google Patents
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- Publication number
- JP2017183487A5 JP2017183487A5 JP2016068137A JP2016068137A JP2017183487A5 JP 2017183487 A5 JP2017183487 A5 JP 2017183487A5 JP 2016068137 A JP2016068137 A JP 2016068137A JP 2016068137 A JP2016068137 A JP 2016068137A JP 2017183487 A5 JP2017183487 A5 JP 2017183487A5
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- region
- substrate
- processing chamber
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims 23
- 239000007789 gas Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016068137A JP6538604B2 (ja) | 2016-03-30 | 2016-03-30 | 半導体装置の製造方法および基板処理装置 |
| US15/465,891 US10014226B2 (en) | 2016-03-30 | 2017-03-22 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016068137A JP6538604B2 (ja) | 2016-03-30 | 2016-03-30 | 半導体装置の製造方法および基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017183487A JP2017183487A (ja) | 2017-10-05 |
| JP2017183487A5 true JP2017183487A5 (enExample) | 2018-05-17 |
| JP6538604B2 JP6538604B2 (ja) | 2019-07-03 |
Family
ID=59961889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016068137A Active JP6538604B2 (ja) | 2016-03-30 | 2016-03-30 | 半導体装置の製造方法および基板処理装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10014226B2 (enExample) |
| JP (1) | JP6538604B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102553773B1 (ko) * | 2019-01-09 | 2023-07-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 디바이스에 구조를 형성하는 방법 |
| JP7117354B2 (ja) | 2020-09-14 | 2022-08-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6027961A (en) * | 1998-06-30 | 2000-02-22 | Motorola, Inc. | CMOS semiconductor devices and method of formation |
| US6291282B1 (en) * | 1999-02-26 | 2001-09-18 | Texas Instruments Incorporated | Method of forming dual metal gate structures or CMOS devices |
| US7514310B2 (en) * | 2004-12-01 | 2009-04-07 | Samsung Electronics Co., Ltd. | Dual work function metal gate structure and related method of manufacture |
| US7612422B2 (en) * | 2006-12-29 | 2009-11-03 | Texas Instruments Incorporated | Structure for dual work function metal gate electrodes by control of interface dipoles |
| JP5774822B2 (ja) | 2009-05-25 | 2015-09-09 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
| JP5462885B2 (ja) * | 2009-12-18 | 2014-04-02 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
| US20130149852A1 (en) * | 2011-12-08 | 2013-06-13 | Tokyo Electron Limited | Method for forming a semiconductor device |
| JP6308584B2 (ja) | 2013-02-28 | 2018-04-11 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム |
| JP6086933B2 (ja) | 2015-01-06 | 2017-03-01 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
-
2016
- 2016-03-30 JP JP2016068137A patent/JP6538604B2/ja active Active
-
2017
- 2017-03-22 US US15/465,891 patent/US10014226B2/en active Active
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