JP2003023111A5 - - Google Patents

Download PDF

Info

Publication number
JP2003023111A5
JP2003023111A5 JP2001206786A JP2001206786A JP2003023111A5 JP 2003023111 A5 JP2003023111 A5 JP 2003023111A5 JP 2001206786 A JP2001206786 A JP 2001206786A JP 2001206786 A JP2001206786 A JP 2001206786A JP 2003023111 A5 JP2003023111 A5 JP 2003023111A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001206786A
Other versions
JP2003023111A (ja
JP4911838B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001206786A priority Critical patent/JP4911838B2/ja
Priority claimed from JP2001206786A external-priority patent/JP4911838B2/ja
Priority to US10/162,169 priority patent/US6690053B2/en
Publication of JP2003023111A publication Critical patent/JP2003023111A/ja
Publication of JP2003023111A5 publication Critical patent/JP2003023111A5/ja
Application granted granted Critical
Publication of JP4911838B2 publication Critical patent/JP4911838B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001206786A 2001-07-06 2001-07-06 半導体装置およびその製造方法 Expired - Fee Related JP4911838B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001206786A JP4911838B2 (ja) 2001-07-06 2001-07-06 半導体装置およびその製造方法
US10/162,169 US6690053B2 (en) 2001-07-06 2002-06-05 Shared contact in a semiconductor device in which DRAMs and SRAMs are combined and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001206786A JP4911838B2 (ja) 2001-07-06 2001-07-06 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010270455A Division JP2011049601A (ja) 2010-12-03 2010-12-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2003023111A JP2003023111A (ja) 2003-01-24
JP2003023111A5 true JP2003023111A5 (ja) 2008-08-07
JP4911838B2 JP4911838B2 (ja) 2012-04-04

Family

ID=19042869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001206786A Expired - Fee Related JP4911838B2 (ja) 2001-07-06 2001-07-06 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US6690053B2 (ja)
JP (1) JP4911838B2 (ja)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3863391B2 (ja) * 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2003007854A (ja) * 2001-06-22 2003-01-10 Nec Corp 半導体記憶装置及びその製造方法
TWI225671B (en) * 2003-04-07 2004-12-21 Nanya Technology Corp Method of forming bit line contact via
JP4744788B2 (ja) * 2003-05-22 2011-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7309742B2 (en) * 2003-11-14 2007-12-18 Fina Technology, Inc. Impact copolymer with optimized melt flow, stiffness, and low-temperature impact resistance
KR100615085B1 (ko) * 2004-01-12 2006-08-22 삼성전자주식회사 노드 콘택 구조체들, 이를 채택하는 반도체소자들, 이를채택하는 에스램 셀들 및 이를 제조하는 방법들
US6914338B1 (en) * 2004-04-06 2005-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell having conductive sill
KR100618833B1 (ko) * 2004-06-12 2006-08-31 삼성전자주식회사 비대칭 ｓｒａｍ 소자 및 그 제조방법
JP4646595B2 (ja) * 2004-10-27 2011-03-09 パナソニック株式会社 半導体記憶装置
KR100648205B1 (ko) 2005-06-13 2006-11-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US8405216B2 (en) * 2005-06-29 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for integrated circuits
KR100698101B1 (ko) * 2005-10-05 2007-03-23 동부일렉트로닉스 주식회사 반도체 소자의 텅스텐 플러그의 구조 및 그 형성방법
JP2007287959A (ja) * 2006-04-18 2007-11-01 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4205734B2 (ja) * 2006-05-25 2009-01-07 エルピーダメモリ株式会社 半導体装置の製造方法
US7960797B2 (en) * 2006-08-29 2011-06-14 Micron Technology, Inc. Semiconductor devices including fine pitch arrays with staggered contacts
US7936001B2 (en) 2006-09-07 2011-05-03 Renesas Electronics Corporation Semiconductor device
JP2008078518A (ja) * 2006-09-25 2008-04-03 Sony Corp 半導体装置の製造方法および半導体装置
US20080116496A1 (en) * 2006-11-21 2008-05-22 Kuo-Chyuan Tzeng Integrating a DRAM with an SRAM having butted contacts and resulting devices
CN100468695C (zh) * 2006-12-04 2009-03-11 中芯国际集成电路制造(上海)有限公司 改善多晶硅缺陷的方法
US7687343B2 (en) * 2006-12-04 2010-03-30 Qimonda Ag Storage capacitor, a memory device and a method of manufacturing the same
JP2009111200A (ja) * 2007-10-31 2009-05-21 Panasonic Corp 半導体装置及びその製造方法
KR101536562B1 (ko) * 2009-02-09 2015-07-14 삼성전자 주식회사 반도체 집적 회로 장치
US8004042B2 (en) * 2009-03-20 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Static random access memory (SRAM) cell and method for forming same
JP2009246374A (ja) * 2009-06-04 2009-10-22 Renesas Technology Corp 半導体装置
JP5626016B2 (ja) * 2011-02-28 2014-11-19 富士通セミコンダクター株式会社 半導体装置の製造方法
KR101883380B1 (ko) * 2011-12-26 2018-07-31 삼성전자주식회사 커패시터를 포함하는 반도체 소자
JP2015211108A (ja) * 2014-04-25 2015-11-24 ルネサスエレクトロニクス株式会社 半導体装置
US10008416B2 (en) * 2016-11-30 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Forming a protective layer to prevent formation of leakage paths
CN109904159A (zh) * 2017-12-08 2019-06-18 联华电子股份有限公司 半导体元件
CN110390119B (zh) 2018-04-20 2022-10-21 联华电子股份有限公司 感测放大器的布局图
CN110707038B (zh) * 2018-09-10 2022-03-22 联华电子股份有限公司 半导体装置及其形成方法
US11935929B2 (en) 2021-10-21 2024-03-19 International Business Machines Corporation High aspect ratio shared contacts

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242422A (ja) * 1997-02-28 1998-09-11 Toshiba Corp 半導体記憶装置およびその製造方法
JP3064999B2 (ja) 1997-11-13 2000-07-12 日本電気株式会社 半導体装置およびその製造方法
JPH11186386A (ja) * 1997-12-19 1999-07-09 Asahi Kasei Micro Syst Co Ltd 半導体装置およびその製造方法
JP3869128B2 (ja) * 1998-09-11 2007-01-17 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000156479A (ja) * 1998-11-20 2000-06-06 Sony Corp 半導体記憶装置およびその製造方法
JP4068746B2 (ja) * 1998-12-25 2008-03-26 株式会社ルネサステクノロジ 半導体集積回路装置
JP2001044294A (ja) * 1999-08-02 2001-02-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4057770B2 (ja) * 2000-10-11 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置

Similar Documents

Publication Publication Date Title
BE2022C531I2 (ja)
BE2022C502I2 (ja)
BE2022C547I2 (ja)
BE2017C056I2 (ja)
BE2017C051I2 (ja)
BE2017C032I2 (ja)
BE2016C051I2 (ja)
BE2015C046I2 (ja)
BE2014C052I2 (ja)
BE2014C036I2 (ja)
BE2014C026I2 (ja)
BE2014C004I2 (ja)
BE2014C006I2 (ja)
BE2017C050I2 (ja)
BE2011C034I2 (ja)
BE2007C047I2 (ja)
AU2002307149A8 (ja)
JP2001259041A5 (ja)
BRPI0209186B1 (ja)
BE2014C008I2 (ja)
CH1379220H1 (ja)
BRPI0204884B1 (ja)
BE2016C021I2 (ja)
BE2017C059I2 (ja)
BE2012C051I2 (ja)