JP2003022690A5 - - Google Patents

Download PDF

Info

Publication number
JP2003022690A5
JP2003022690A5 JP2002189456A JP2002189456A JP2003022690A5 JP 2003022690 A5 JP2003022690 A5 JP 2003022690A5 JP 2002189456 A JP2002189456 A JP 2002189456A JP 2002189456 A JP2002189456 A JP 2002189456A JP 2003022690 A5 JP2003022690 A5 JP 2003022690A5
Authority
JP
Japan
Prior art keywords
memory
circuit
memory device
filter
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002189456A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003022690A (ja
JP3953902B2 (ja
Filing date
Publication date
Priority claimed from US09/894,143 external-priority patent/US6478231B1/en
Application filed filed Critical
Publication of JP2003022690A publication Critical patent/JP2003022690A/ja
Publication of JP2003022690A5 publication Critical patent/JP2003022690A5/ja
Application granted granted Critical
Publication of JP3953902B2 publication Critical patent/JP3953902B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002189456A 2001-06-29 2002-06-28 Ｐｉｒｍメモリモジュールへの相互配線の数を低減するための方法と装置 Expired - Fee Related JP3953902B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/894,143 US6478231B1 (en) 2001-06-29 2001-06-29 Methods for reducing the number of interconnects to the PIRM memory module
US09/894143 2001-06-29

Publications (3)

Publication Number Publication Date
JP2003022690A JP2003022690A (ja) 2003-01-24
JP2003022690A5 true JP2003022690A5 (enExample) 2005-04-21
JP3953902B2 JP3953902B2 (ja) 2007-08-08

Family

ID=25402663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002189456A Expired - Fee Related JP3953902B2 (ja) 2001-06-29 2002-06-28 Ｐｉｒｍメモリモジュールへの相互配線の数を低減するための方法と装置

Country Status (7)

Country Link
US (1) US6478231B1 (enExample)
EP (1) EP1271539B1 (enExample)
JP (1) JP3953902B2 (enExample)
KR (1) KR20030003054A (enExample)
CN (1) CN1395252A (enExample)
DE (1) DE60212004T2 (enExample)
TW (1) TW556214B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
WO2002027768A2 (en) * 2000-09-27 2002-04-04 Nüp2 Incorporated Fabrication of semiconductor devices
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7139183B2 (en) * 2004-07-21 2006-11-21 Hewlett-Packard Development Company, L.P. Logical arrangement of memory arrays
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US20080025069A1 (en) * 2006-07-31 2008-01-31 Scheuerlein Roy E Mixed-use memory array with different data states
US7486537B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
US7813157B2 (en) 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US8045416B2 (en) * 2008-03-05 2011-10-25 Micron Technology, Inc. Method and memory device providing reduced quantity of interconnections
US8325556B2 (en) 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US8422324B2 (en) * 2011-08-26 2013-04-16 Nanya Technology Corp. Method and apparatus for sending test mode signals
EP2946385B1 (en) 2013-01-18 2020-01-08 Hewlett-Packard Enterprise Development LP Interconnection architecture for multilayer circuits
KR102222445B1 (ko) 2015-01-26 2021-03-04 삼성전자주식회사 선택적으로 동작하는 복수의 디램 장치를 포함하는 메모리 시스템
CN109884613A (zh) * 2019-03-29 2019-06-14 湖南赛博诺格电子科技有限公司 一种基于fpga的二极管阵列在线同步控制系统及方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3828263A (en) * 1971-08-09 1974-08-06 Physics Int Co Demodulator for frequency-burst-duration modulated signals
US4415991A (en) * 1981-06-22 1983-11-15 The United States Of America As Represented By The Secretary Of The Navy Multiplexed MOS multiaccess memory system
JPS63128463A (ja) * 1986-11-18 1988-06-01 Nec Corp マイクロプロセツサ多重化システム構成
FR2629941B1 (fr) * 1988-04-12 1991-01-18 Commissariat Energie Atomique Memoire et cellule memoire statiques du type mis, procede de memorisation
JPH0935490A (ja) * 1995-07-17 1997-02-07 Yamaha Corp 半導体記憶装置
US5909617A (en) * 1995-11-07 1999-06-01 Micron Technology, Inc. Method of manufacturing self-aligned resistor and local interconnect
US5905670A (en) * 1997-05-13 1999-05-18 International Business Machines Corp. ROM storage cell and method of fabrication
US5952691A (en) * 1997-05-14 1999-09-14 Ricoh Company, Ltd. Non-volatile electrically alterable semiconductor memory device
KR100289813B1 (ko) * 1998-07-03 2001-10-26 윤종용 노아형플렛-셀마스크롬장치
JP3344331B2 (ja) * 1998-09-30 2002-11-11 日本電気株式会社 不揮発性半導体記憶装置
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6683372B1 (en) * 1999-11-18 2004-01-27 Sun Microsystems, Inc. Memory expansion module with stacked memory packages and a serial storage unit
US6603168B1 (en) * 2000-04-20 2003-08-05 Agere Systems Inc. Vertical DRAM device with channel access transistor and stacked storage capacitor and associated method
KR100372247B1 (ko) * 2000-05-22 2003-02-17 삼성전자주식회사 프리페치 동작모드를 가지는 반도체 메모리 장치 및 메인데이터 라인수를 줄이기 위한 데이터 전송방법
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays

Similar Documents

Publication Publication Date Title
JP2003022690A5 (enExample)
CA2403231C (en) Vertical electrical interconnections in a stack
JP4828251B2 (ja) 積層型半導体記憶装置及びその制御方法
WO2022173700A1 (en) Memory interface with configurable high-speed serial data lanes for high bandwidth memory
US5652462A (en) Multilevel semiconductor integrated circuit device
JP2003059282A5 (enExample)
US20040221106A1 (en) Upgradable memory system with reconfigurable interconnect
JP2009524910A5 (enExample)
JP2002050782A (ja) 再構成可能なタイルを備えた太陽モジュールアレイ
JP2010530644A5 (enExample)
RU2012118036A (ru) Поперечное рассеивание тепла 3-d интегральной схемы
KR20170096102A (ko) 반도체 장치, 제조 방법, 전자 기기
CA2422677A1 (en) Technique for reducing the number of layers in a multilayer circuit board
TW200625709A (en) Vertical interconnect for organic electronic devices
JP2003124383A5 (enExample)
TWI672683B (zh) 顯示面板
EP1271539A3 (en) Memory device
CN115968493A (zh) 驱动器电路及其驱动方法、阵列基板和显示装置
JP2015232500A (ja) 半導体装置
CN102782849A (zh) 具有忆阻存储器的设备
ITMI20041760A1 (it) Condensatore di bypass su chip e procedimento di fabbricazione del medesimo
EP1651020A4 (en) CAPSULE ELECTRODE, CAPSULATION, DEVICE AND PROCESS FOR COMPONENT MANUFACTURING
JP2006502560A5 (enExample)
CN115461872A (zh) 阵列基板、发光基板和显示装置
EP1566838A3 (en) Organic electro-luminescence display device and fabricating method thereof