DE60212004T2 - Speicheranordnung - Google Patents

Speicheranordnung Download PDF

Info

Publication number
DE60212004T2
DE60212004T2 DE60212004T DE60212004T DE60212004T2 DE 60212004 T2 DE60212004 T2 DE 60212004T2 DE 60212004 T DE60212004 T DE 60212004T DE 60212004 T DE60212004 T DE 60212004T DE 60212004 T2 DE60212004 T2 DE 60212004T2
Authority
DE
Germany
Prior art keywords
memory
circuit
interface
array
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60212004T
Other languages
German (de)
English (en)
Other versions
DE60212004D1 (de
Inventor
Carl Woodside Taussig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Application granted granted Critical
Publication of DE60212004D1 publication Critical patent/DE60212004D1/de
Publication of DE60212004T2 publication Critical patent/DE60212004T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Semiconductor Memories (AREA)
DE60212004T 2001-06-29 2002-06-24 Speicheranordnung Expired - Fee Related DE60212004T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US894143 1986-08-07
US09/894,143 US6478231B1 (en) 2001-06-29 2001-06-29 Methods for reducing the number of interconnects to the PIRM memory module

Publications (2)

Publication Number Publication Date
DE60212004D1 DE60212004D1 (de) 2006-07-20
DE60212004T2 true DE60212004T2 (de) 2007-03-29

Family

ID=25402663

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212004T Expired - Fee Related DE60212004T2 (de) 2001-06-29 2002-06-24 Speicheranordnung

Country Status (7)

Country Link
US (1) US6478231B1 (enExample)
EP (1) EP1271539B1 (enExample)
JP (1) JP3953902B2 (enExample)
KR (1) KR20030003054A (enExample)
CN (1) CN1395252A (enExample)
DE (1) DE60212004T2 (enExample)
TW (1) TW556214B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) * 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US6586327B2 (en) * 2000-09-27 2003-07-01 Nup2 Incorporated Fabrication of semiconductor devices
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7139183B2 (en) * 2004-07-21 2006-11-21 Hewlett-Packard Development Company, L.P. Logical arrangement of memory arrays
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US7486537B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US20080025069A1 (en) * 2006-07-31 2008-01-31 Scheuerlein Roy E Mixed-use memory array with different data states
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
US7813157B2 (en) 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US8045416B2 (en) 2008-03-05 2011-10-25 Micron Technology, Inc. Method and memory device providing reduced quantity of interconnections
US8325556B2 (en) 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US8422324B2 (en) * 2011-08-26 2013-04-16 Nanya Technology Corp. Method and apparatus for sending test mode signals
WO2014113024A1 (en) 2013-01-18 2014-07-24 Hewlett-Packard Development Company, L.P. Interconnection architecture for multilayer circuits
KR102222445B1 (ko) 2015-01-26 2021-03-04 삼성전자주식회사 선택적으로 동작하는 복수의 디램 장치를 포함하는 메모리 시스템
CN109884613A (zh) * 2019-03-29 2019-06-14 湖南赛博诺格电子科技有限公司 一种基于fpga的二极管阵列在线同步控制系统及方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3828263A (en) * 1971-08-09 1974-08-06 Physics Int Co Demodulator for frequency-burst-duration modulated signals
US4415991A (en) * 1981-06-22 1983-11-15 The United States Of America As Represented By The Secretary Of The Navy Multiplexed MOS multiaccess memory system
JPS63128463A (ja) * 1986-11-18 1988-06-01 Nec Corp マイクロプロセツサ多重化システム構成
FR2629941B1 (fr) * 1988-04-12 1991-01-18 Commissariat Energie Atomique Memoire et cellule memoire statiques du type mis, procede de memorisation
JPH0935490A (ja) * 1995-07-17 1997-02-07 Yamaha Corp 半導体記憶装置
US5909617A (en) * 1995-11-07 1999-06-01 Micron Technology, Inc. Method of manufacturing self-aligned resistor and local interconnect
US5905670A (en) * 1997-05-13 1999-05-18 International Business Machines Corp. ROM storage cell and method of fabrication
US5952691A (en) * 1997-05-14 1999-09-14 Ricoh Company, Ltd. Non-volatile electrically alterable semiconductor memory device
KR100289813B1 (ko) * 1998-07-03 2001-10-26 윤종용 노아형플렛-셀마스크롬장치
JP3344331B2 (ja) * 1998-09-30 2002-11-11 日本電気株式会社 不揮発性半導体記憶装置
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6683372B1 (en) * 1999-11-18 2004-01-27 Sun Microsystems, Inc. Memory expansion module with stacked memory packages and a serial storage unit
US6603168B1 (en) * 2000-04-20 2003-08-05 Agere Systems Inc. Vertical DRAM device with channel access transistor and stacked storage capacitor and associated method
KR100372247B1 (ko) * 2000-05-22 2003-02-17 삼성전자주식회사 프리페치 동작모드를 가지는 반도체 메모리 장치 및 메인데이터 라인수를 줄이기 위한 데이터 전송방법
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays

Also Published As

Publication number Publication date
TW556214B (en) 2003-10-01
US6478231B1 (en) 2002-11-12
EP1271539B1 (en) 2006-06-07
EP1271539A3 (en) 2004-06-23
DE60212004D1 (de) 2006-07-20
JP2003022690A (ja) 2003-01-24
EP1271539A2 (en) 2003-01-02
CN1395252A (zh) 2003-02-05
JP3953902B2 (ja) 2007-08-08
KR20030003054A (ko) 2003-01-09

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., HOUSTON

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee