JP2002540294A5 - - Google Patents
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- JP2002540294A5 JP2002540294A5 JP2000607783A JP2000607783A JP2002540294A5 JP 2002540294 A5 JP2002540294 A5 JP 2002540294A5 JP 2000607783 A JP2000607783 A JP 2000607783A JP 2000607783 A JP2000607783 A JP 2000607783A JP 2002540294 A5 JP2002540294 A5 JP 2002540294A5
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- Prior art keywords
- alloy
- oxide
- metal
- atomic percent
- forming metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000956 alloy Substances 0.000 description 130
- 229910045601 alloy Inorganic materials 0.000 description 130
- 229910052751 metal Inorganic materials 0.000 description 116
- 239000002184 metal Substances 0.000 description 116
- 238000000034 method Methods 0.000 description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 30
- 239000000758 substrate Substances 0.000 description 26
- 239000011162 core material Substances 0.000 description 21
- 150000002739 metals Chemical class 0.000 description 21
- 239000000843 powder Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 239000011888 foil Substances 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- 238000005096 rolling process Methods 0.000 description 10
- 239000002887 superconductor Substances 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229910052684 Cerium Inorganic materials 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 229910052776 Thorium Inorganic materials 0.000 description 4
- 229910052769 Ytterbium Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910052689 Holmium Inorganic materials 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 235000015110 jellies Nutrition 0.000 description 2
- 239000008274 jelly Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003336 CuNi Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- -1 yttrium Chemical class 0.000 description 1
Images
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/283,777 US6458223B1 (en) | 1997-10-01 | 1999-03-31 | Alloy materials |
| US09/283,777 | 1999-03-31 | ||
| PCT/US2000/002435 WO2000058044A1 (en) | 1999-03-31 | 2000-01-31 | Alloy materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002540294A JP2002540294A (ja) | 2002-11-26 |
| JP2002540294A5 true JP2002540294A5 (enExample) | 2006-02-09 |
Family
ID=23087507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000607783A Pending JP2002540294A (ja) | 1999-03-31 | 2000-01-31 | 合金材料 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6458223B1 (enExample) |
| EP (1) | EP1181122A4 (enExample) |
| JP (1) | JP2002540294A (enExample) |
| AU (1) | AU764082B2 (enExample) |
| CA (1) | CA2365740A1 (enExample) |
| WO (1) | WO2000058044A1 (enExample) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475311B1 (en) * | 1999-03-31 | 2002-11-05 | American Superconductor Corporation | Alloy materials |
| US6331199B1 (en) * | 2000-05-15 | 2001-12-18 | Ut-Battelle, Llc | Biaxially textured articles formed by powder metallurgy |
| EP1341941B1 (de) * | 2000-12-07 | 2007-02-07 | Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. | Metallband für epitaktische beschichtungen und verfahren zu dessen herstellung |
| US6821338B2 (en) | 2000-12-15 | 2004-11-23 | The Regents Of The University Of California | Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
| US6617283B2 (en) * | 2001-06-22 | 2003-09-09 | Ut-Battelle, Llc | Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom |
| US6743531B2 (en) * | 2001-06-22 | 2004-06-01 | Fujikura Ltd. | Oxide superconducting conductor and its production method |
| US6809066B2 (en) | 2001-07-30 | 2004-10-26 | The Regents Of The University Of California | Ion texturing methods and articles |
| US6610414B2 (en) * | 2001-08-16 | 2003-08-26 | Ut-Battelle, Llc | Biaxially textured articles formed by power metallurgy |
| US6745059B2 (en) | 2001-11-28 | 2004-06-01 | American Superconductor Corporation | Superconductor cables and magnetic devices |
| DE10200445B4 (de) * | 2002-01-02 | 2005-12-08 | Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. | Metallband für epitaktische Beschichtungen und Verfahren zu dessen Herstellung |
| WO2003065467A1 (en) * | 2002-01-29 | 2003-08-07 | Jochen Dieter Mannhart | Superconductor with optimized microstructure and method for making such a superconductor |
| US6645313B2 (en) * | 2002-02-22 | 2003-11-11 | Ut-Battelle, Llc | Powder-in-tube and thick-film methods of fabricating high temperature superconductors having enhanced biaxial texture |
| JP2005056754A (ja) | 2003-08-06 | 2005-03-03 | Sumitomo Electric Ind Ltd | 超電導線材およびその製造方法 |
| DE10339867B4 (de) * | 2003-08-25 | 2007-12-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Verfahren zur Herstellung von metallischen Flachdrähten oder Bändern mit Würfeltextur |
| US7226894B2 (en) * | 2003-10-22 | 2007-06-05 | General Electric Company | Superconducting wire, method of manufacture thereof and the articles derived therefrom |
| US20050092253A1 (en) * | 2003-11-04 | 2005-05-05 | Venkat Selvamanickam | Tape-manufacturing system having extended operational capabilites |
| US7146034B2 (en) * | 2003-12-09 | 2006-12-05 | Superpower, Inc. | Tape manufacturing system |
| US7261776B2 (en) * | 2004-03-30 | 2007-08-28 | American Superconductor Corporation | Deposition of buffer layers on textured metal surfaces |
| US20050223984A1 (en) * | 2004-04-08 | 2005-10-13 | Hee-Gyoun Lee | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
| US20050223983A1 (en) * | 2004-04-08 | 2005-10-13 | Venkat Selvamanickam | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
| US7794493B2 (en) * | 2004-06-30 | 2010-09-14 | Cordis Corporation | Magnetic resonance imaging compatibility alloy for implantable medical devices |
| JP2006027958A (ja) * | 2004-07-16 | 2006-02-02 | Sumitomo Electric Ind Ltd | 薄膜材料およびその製造方法 |
| US7496390B2 (en) | 2004-08-20 | 2009-02-24 | American Superconductor Corporation | Low ac loss filamentary coated superconductors |
| US7463915B2 (en) | 2004-08-20 | 2008-12-09 | American Superconductor Corporation | Stacked filamentary coated superconductors |
| US7582328B2 (en) | 2004-08-20 | 2009-09-01 | American Superconductor Corporation | Dropwise deposition of a patterned oxide superconductor |
| US7387811B2 (en) * | 2004-09-21 | 2008-06-17 | Superpower, Inc. | Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD) |
| US7816303B2 (en) | 2004-10-01 | 2010-10-19 | American Superconductor Corporation | Architecture for high temperature superconductor wire |
| EP1805817B1 (en) * | 2004-10-01 | 2016-11-16 | American Superconductor Corporation | Thick superconductor films with improved performance |
| US7411303B2 (en) * | 2004-11-09 | 2008-08-12 | Texas Instruments Incorporated | Semiconductor assembly having substrate with electroplated contact pads |
| DE102005013368B3 (de) * | 2005-03-16 | 2006-04-13 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Verfahren zur Herstellung und Verwendung von Halbzeug auf Nickelbasis mit Rekristallisationswürfeltextur |
| US7763343B2 (en) | 2005-03-31 | 2010-07-27 | American Superconductor Corporation | Mesh-type stabilizer for filamentary coated superconductors |
| CN100453257C (zh) * | 2005-05-13 | 2009-01-21 | 北京工业大学 | 强化双轴织构Ag基复合基带的制备方法 |
| KR100691061B1 (ko) * | 2005-08-30 | 2007-03-09 | 엘에스전선 주식회사 | 초전도 선재용 기판 및 그 제조방법과 초전도 선재 |
| US7674751B2 (en) | 2006-01-10 | 2010-03-09 | American Superconductor Corporation | Fabrication of sealed high temperature superconductor wires |
| JP2007200870A (ja) * | 2006-01-26 | 2007-08-09 | Ls Cable Ltd | 超伝導ケーブル用基板の製造方法 |
| US8030246B2 (en) | 2006-07-21 | 2011-10-04 | American Superconductor Corporation | Low resistance splice for high temperature superconductor wires |
| US7902120B2 (en) | 2006-07-24 | 2011-03-08 | American Superconductor Corporation | High temperature superconductors having planar magnetic flux pinning centers and methods for making the same |
| US7893006B2 (en) | 2007-03-23 | 2011-02-22 | American Superconductor Corporation | Systems and methods for solution-based deposition of metallic cap layers for high temperature superconductor wires |
| WO2008124436A1 (en) * | 2007-04-06 | 2008-10-16 | American Superconductor Corporation | Composite substrates for high temperature superconductors having improved properties |
| DE102007024166B4 (de) * | 2007-05-24 | 2011-01-05 | Zenergy Power Gmbh | Verfahren zum Bearbeiten eines Metallsubstrats und Verwendung dessen für einen Hochtemperatur-Supraleiter |
| US8195260B2 (en) | 2008-07-23 | 2012-06-05 | American Superconductor Corporation | Two-sided splice for high temperature superconductor laminated wires |
| US9165695B2 (en) | 2009-09-14 | 2015-10-20 | Ngk Insulators, Ltd. | Copper alloy wire and method for producing the same |
| WO2011030899A1 (ja) | 2009-09-14 | 2011-03-17 | 日本碍子株式会社 | 銅合金箔、それを用いたフレキシブルプリント基板および銅合金箔の製造方法 |
| CN104404306B (zh) * | 2014-09-03 | 2017-02-15 | 上海大学 | 涂层导体用高强度立方织构镍基合金基带及其制备方法 |
| DE102018220222A1 (de) * | 2018-11-26 | 2020-05-28 | Thyssenkrupp Ag | Verfahren zur Herstellung eines Werkstoffverbundes, Werkstoffverbund und seine Verwendung |
| CN109355519B (zh) * | 2018-12-17 | 2020-06-12 | 河南师范大学 | 一种提高无铁磁性立方织构铜基合金基带强度的制备方法 |
| EP4193006A1 (en) * | 2020-08-06 | 2023-06-14 | American Superconductor Corporation | Electro-formed metal foils |
| RU2759146C1 (ru) * | 2020-11-16 | 2021-11-09 | Федеральное государственное бюджетное учреждение науки Институт физики металлов имени М.Н. Михеева Уральского отделения Российской академии наук (ИФМ УрО РАН) | Способ изготовления биаксиально текстурированной подложки в виде ленты из тройного сплава на медно-никелевой основе для эпитаксиального нанесения на нее буферных и высокотемпературного сверхпроводящего слоев |
| CN117403096B (zh) * | 2023-12-13 | 2024-03-12 | 宁波兴业盛泰集团有限公司 | 高强高导耐高温铜锆系合金材料及其制备方法 |
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-
1999
- 1999-03-31 US US09/283,777 patent/US6458223B1/en not_active Expired - Fee Related
-
2000
- 2000-01-31 JP JP2000607783A patent/JP2002540294A/ja active Pending
- 2000-01-31 EP EP00921315A patent/EP1181122A4/en not_active Ceased
- 2000-01-31 CA CA002365740A patent/CA2365740A1/en not_active Abandoned
- 2000-01-31 WO PCT/US2000/002435 patent/WO2000058044A1/en not_active Ceased
- 2000-01-31 AU AU41659/00A patent/AU764082B2/en not_active Ceased
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