JP2002520812A - デュアルダマシン系用のエッチング後洗浄組成物及び方法 - Google Patents

デュアルダマシン系用のエッチング後洗浄組成物及び方法

Info

Publication number
JP2002520812A
JP2002520812A JP2000558545A JP2000558545A JP2002520812A JP 2002520812 A JP2002520812 A JP 2002520812A JP 2000558545 A JP2000558545 A JP 2000558545A JP 2000558545 A JP2000558545 A JP 2000558545A JP 2002520812 A JP2002520812 A JP 2002520812A
Authority
JP
Japan
Prior art keywords
choline
composition
integrated circuit
compound
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000558545A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002520812A5 (https=
Inventor
キャサリン エム ペイン
デイビッド ジェイ マロニー
シハイング リー
ワイ ムン リー
レスリー ダブリュ アークレス
Original Assignee
イーケイシー テクノロジー インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーケイシー テクノロジー インコーポレーテッド filed Critical イーケイシー テクノロジー インコーポレーテッド
Publication of JP2002520812A publication Critical patent/JP2002520812A/ja
Publication of JP2002520812A5 publication Critical patent/JP2002520812A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • C23G1/18—Organic inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000558545A 1998-07-06 1999-07-02 デュアルダマシン系用のエッチング後洗浄組成物及び方法 Pending JP2002520812A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9202498P 1998-07-06 1998-07-06
US60/092,024 1998-07-06
PCT/US1999/015157 WO2000002238A1 (en) 1998-07-06 1999-07-02 Post etch cleaning composition and process for dual damascene system

Publications (2)

Publication Number Publication Date
JP2002520812A true JP2002520812A (ja) 2002-07-09
JP2002520812A5 JP2002520812A5 (https=) 2006-08-31

Family

ID=22230935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000558545A Pending JP2002520812A (ja) 1998-07-06 1999-07-02 デュアルダマシン系用のエッチング後洗浄組成物及び方法

Country Status (7)

Country Link
US (1) US6417112B1 (https=)
EP (1) EP1127370A4 (https=)
JP (1) JP2002520812A (https=)
KR (1) KR100645619B1 (https=)
AU (1) AU4969099A (https=)
TW (1) TW428241B (https=)
WO (1) WO2000002238A1 (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007510173A (ja) * 2003-10-22 2007-04-19 イーケーシー テクノロジー，インコーポレイティド 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程
JP2008519295A (ja) * 2004-10-29 2008-06-05 イーケイシー テクノロジー インコーポレーテッド ウェーハレベルパッケージングにおけるフォトレジストストリッピングと残渣除去のための組成物及び方法
WO2009096480A1 (ja) * 2008-01-30 2009-08-06 Nissan Chemical Industries, Ltd. ハードマスク用除去組成物および除去方法
JP2011040722A (ja) * 2009-07-07 2011-02-24 Air Products & Chemicals Inc Ｃｍｐ後洗浄のための配合物及び方法
JP2012526374A (ja) * 2009-05-07 2012-10-25 ビーエーエスエフ ソシエタス・ヨーロピア レジストストリッピング組成物及び電気装置を製造するための方法
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物
JP2016516759A (ja) * 2013-04-11 2016-06-09 タミンコ コリン水酸化物を製造するための改良した方法
JP2022043812A (ja) * 2020-09-04 2022-03-16 花王株式会社 樹脂マスク剥離用洗浄剤組成物

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US7547669B2 (en) * 1998-07-06 2009-06-16 Ekc Technology, Inc. Remover compositions for dual damascene system
US7579308B2 (en) 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US6858540B2 (en) 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
US6753258B1 (en) * 2000-11-03 2004-06-22 Applied Materials Inc. Integration scheme for dual damascene structure
WO2002045148A2 (de) * 2000-11-29 2002-06-06 Infineon Technologies Ag Reinigungslösung für halbleiterscheiben im beol-bereich
US7012025B2 (en) 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
JP2002252222A (ja) * 2001-02-22 2002-09-06 Nec Corp 半導体装置の製造方法、及び半導体装置
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7008554B2 (en) 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6821881B2 (en) 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
KR20030023204A (ko) * 2001-09-12 2003-03-19 삼성전자주식회사 포토레지스트용 스트리퍼 조성물
US6573175B1 (en) 2001-11-30 2003-06-03 Micron Technology, Inc. Dry low k film application for interlevel dielectric and method of cleaning etched features
US6943142B2 (en) * 2002-01-09 2005-09-13 Air Products And Chemicals, Inc. Aqueous stripping and cleaning composition
US20030171239A1 (en) 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
WO2003064581A1 (en) * 2002-01-28 2003-08-07 Ekc Technology, Inc. Methods and compositions for chemically treating a substrate using foam technology
JP3516446B2 (ja) * 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
JP4282054B2 (ja) * 2002-09-09 2009-06-17 東京応化工業株式会社 デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法
US6934032B1 (en) * 2002-09-30 2005-08-23 Advanced Micro Devices, Inc. Copper oxide monitoring by scatterometry/ellipsometry during nitride or BLOK removal in damascene process
TWI295950B (en) 2002-10-03 2008-04-21 Applied Materials Inc Method for reducing delamination during chemical mechanical polishing
KR100581279B1 (ko) 2003-06-02 2006-05-17 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 반도체소자의 범프 형성방법
US7205235B2 (en) 2003-12-15 2007-04-17 Freescale Semiconductor, Inc. Method for reducing corrosion of metal surfaces during semiconductor processing
KR100562302B1 (ko) * 2003-12-27 2006-03-22 동부아남반도체 주식회사 멀티 화학액 처리 단계를 이용한 랜덤 폴리머 제거 방법
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
JP2005277375A (ja) * 2004-02-27 2005-10-06 Nec Electronics Corp 半導体装置の製造方法
JP2007531992A (ja) * 2004-03-30 2007-11-08 ビーエーエスエフ　アクチェンゲゼルシャフト エッチング残渣を除去するための水溶液
US20060003910A1 (en) * 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US7456093B2 (en) * 2004-07-03 2008-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving a semiconductor device delamination resistance
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
JP2006054251A (ja) * 2004-08-10 2006-02-23 Toshiba Corp 半導体装置の製造方法
US20070054482A1 (en) * 2004-08-10 2007-03-08 Takahito Nakajima Semiconductor device fabrication method
JP3994992B2 (ja) * 2004-08-13 2007-10-24 三菱瓦斯化学株式会社 シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法
US7166543B2 (en) * 2004-08-30 2007-01-23 Micron Technology, Inc. Methods for forming an enriched metal oxide surface for use in a semiconductor device
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
KR100628215B1 (ko) * 2004-12-24 2006-09-26 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
US7879782B2 (en) * 2005-10-13 2011-02-01 Air Products And Chemicals, Inc. Aqueous cleaning composition and method for using same
DE102005057061B3 (de) 2005-11-30 2007-06-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Entfernen einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfer-metallisierungsschicht
KR100679822B1 (ko) * 2005-12-14 2007-02-06 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US20080174015A1 (en) * 2007-01-23 2008-07-24 Russell Thomas Herrin Removal of etching process residual in semiconductor fabrication
JP6105490B2 (ja) * 2012-01-27 2017-03-29 旭化成株式会社 ドライエッチング用熱反応型レジスト材料、及びモールドの製造方法
US8871639B2 (en) 2013-01-04 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
WO2019109329A1 (en) * 2017-12-08 2019-06-13 Henkel Ag & Co. Kgaa Photoresist stripper compostion
ES2912801T3 (es) * 2018-04-26 2022-05-27 Kurita Water Ind Ltd Estabilización de composiciones que comprenden hidróxido de trialquilalcanolamina cuaternaria
WO2021121552A1 (en) * 2019-12-17 2021-06-24 Henkel Ag & Co. Kgaa Photoresist stripping composition
US12046476B2 (en) * 2022-03-25 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wet etching chemistry and method of forming semiconductor device using the same

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007510173A (ja) * 2003-10-22 2007-04-19 イーケーシー テクノロジー，インコーポレイティド 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程
JP2008519295A (ja) * 2004-10-29 2008-06-05 イーケイシー テクノロジー インコーポレーテッド ウェーハレベルパッケージングにおけるフォトレジストストリッピングと残渣除去のための組成物及び方法
WO2009096480A1 (ja) * 2008-01-30 2009-08-06 Nissan Chemical Industries, Ltd. ハードマスク用除去組成物および除去方法
JP2012526374A (ja) * 2009-05-07 2012-10-25 ビーエーエスエフ ソシエタス・ヨーロピア レジストストリッピング組成物及び電気装置を製造するための方法
JP2011040722A (ja) * 2009-07-07 2011-02-24 Air Products & Chemicals Inc Ｃｍｐ後洗浄のための配合物及び方法
US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物
JP2016516759A (ja) * 2013-04-11 2016-06-09 タミンコ コリン水酸化物を製造するための改良した方法
JP2022043812A (ja) * 2020-09-04 2022-03-16 花王株式会社 樹脂マスク剥離用洗浄剤組成物
JP7629284B2 (ja) 2020-09-04 2025-02-13 花王株式会社 樹脂マスク剥離用洗浄剤組成物

Also Published As

Publication number Publication date
AU4969099A (en) 2000-01-24
TW428241B (en) 2001-04-01
WO2000002238A1 (en) 2000-01-13
US6417112B1 (en) 2002-07-09
KR100645619B1 (ko) 2006-11-13
KR20010080865A (ko) 2001-08-25
EP1127370A1 (en) 2001-08-29
EP1127370A4 (en) 2001-08-29

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