JP2002520659A - フォトレジストおよび有機物質を基体表面から取り除くための組成物 - Google Patents

フォトレジストおよび有機物質を基体表面から取り除くための組成物

Info

Publication number
JP2002520659A
JP2002520659A JP2000559485A JP2000559485A JP2002520659A JP 2002520659 A JP2002520659 A JP 2002520659A JP 2000559485 A JP2000559485 A JP 2000559485A JP 2000559485 A JP2000559485 A JP 2000559485A JP 2002520659 A JP2002520659 A JP 2002520659A
Authority
JP
Japan
Prior art keywords
stripping
weight
composition
surfactant
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000559485A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002520659A5 (https=
Inventor
オーバーランダー・ジョーゼフ・イー
スレザック・マーク・エス
カンナ・ディネッシュ・エヌ
ダラム・デイナ・エル
スピニチェリ・ローレンス
Original Assignee
クラリアント・インターナシヨナル・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クラリアント・インターナシヨナル・リミテッド filed Critical クラリアント・インターナシヨナル・リミテッド
Publication of JP2002520659A publication Critical patent/JP2002520659A/ja
Publication of JP2002520659A5 publication Critical patent/JP2002520659A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/264Aldehydes; Ketones; Acetals or ketals
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000559485A 1998-07-10 1999-06-30 フォトレジストおよび有機物質を基体表面から取り除くための組成物 Pending JP2002520659A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/113,892 US6368421B1 (en) 1998-07-10 1998-07-10 Composition for stripping photoresist and organic materials from substrate surfaces
US09/113,892 1998-07-10
PCT/EP1999/004498 WO2000003306A1 (en) 1998-07-10 1999-06-30 Composition for stripping photoresist and organic materials from substrate surfaces

Publications (2)

Publication Number Publication Date
JP2002520659A true JP2002520659A (ja) 2002-07-09
JP2002520659A5 JP2002520659A5 (https=) 2006-06-29

Family

ID=22352158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000559485A Pending JP2002520659A (ja) 1998-07-10 1999-06-30 フォトレジストおよび有機物質を基体表面から取り除くための組成物

Country Status (9)

Country Link
US (1) US6368421B1 (https=)
EP (1) EP1097405B1 (https=)
JP (1) JP2002520659A (https=)
KR (1) KR100602463B1 (https=)
CN (1) CN1316317C (https=)
DE (1) DE69934229T2 (https=)
MY (1) MY117049A (https=)
TW (1) TW544551B (https=)
WO (1) WO2000003306A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009005014A1 (ja) * 2007-07-03 2009-01-08 Toagosei Co., Ltd. レジスト剥離剤組成物
JP2012522264A (ja) * 2009-03-27 2012-09-20 イーストマン ケミカル カンパニー 有機物質を除去するための組成物及び方法
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
JP2013540171A (ja) * 2010-09-27 2013-10-31 イーストマン ケミカル カンパニー 基材から物質を除去するための方法および組成物

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US6939477B2 (en) 1997-06-06 2005-09-06 Ashland, Inc. Temperature-controlled induction heating of polymeric materials
US7348300B2 (en) 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US7521405B2 (en) 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US6319835B1 (en) * 2000-02-25 2001-11-20 Shipley Company, L.L.C. Stripping method
KR100360985B1 (ko) * 2000-04-26 2002-11-18 주식회사 동진쎄미켐 레지스트 스트리퍼 조성물
CA2446140C (en) * 2000-05-02 2008-11-18 Tribond, Inc. Temperature-controlled induction heating of polymeric materials
KR20020072595A (ko) * 2001-03-12 2002-09-18 (주)에스티디 동판의 산화막 형성방법 및 이에 의해 제조된 동판
KR100429455B1 (ko) * 2001-06-11 2004-05-04 동우 화인켐 주식회사 포토레지스트의 에지 비드를 제거하는 세정용액 및 이를이용한 세정방법
KR100772810B1 (ko) * 2001-12-18 2007-11-01 주식회사 하이닉스반도체 포토레지스트 세정액 조성물
KR100772809B1 (ko) * 2001-12-18 2007-11-01 주식회사 하이닉스반도체 포토레지스트 세정액 조성물
US7563753B2 (en) 2001-12-12 2009-07-21 Hynix Semiconductor Inc. Cleaning solution for removing photoresist
US20030196685A1 (en) * 2001-12-18 2003-10-23 Shipley Company, L.L.C. Cleaning composition and method
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JP4045180B2 (ja) * 2002-12-03 2008-02-13 Azエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
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KR20050101458A (ko) * 2004-04-19 2005-10-24 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법
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KR100690347B1 (ko) * 2005-04-09 2007-03-09 주식회사 엘지화학 박리액 조성물, 이를 이용한 박리 방법 및 그 박리 장치
US20070099810A1 (en) * 2005-10-27 2007-05-03 Hiroshi Matsunaga Cleaning liquid and cleaning method
JP5000260B2 (ja) * 2006-10-19 2012-08-15 AzエレクトロニックマテリアルズIp株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP5306755B2 (ja) * 2008-09-16 2013-10-02 AzエレクトロニックマテリアルズIp株式会社 基板処理液およびそれを用いたレジスト基板処理方法
KR101579846B1 (ko) * 2008-12-24 2015-12-24 주식회사 이엔에프테크놀로지 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법
CN102334069B (zh) 2009-02-25 2013-07-10 安万托特性材料股份有限公司 基于多用途酸性有机溶剂的微电子清洗组合物
WO2012161790A1 (en) * 2011-02-24 2012-11-29 John Moore Concentrated chemical composition and method for removing photoresist during microelectric fabrication
CN102436153B (zh) * 2011-10-28 2013-06-19 绍兴文理学院 印花网版感光胶剥离剂
CN102427039A (zh) * 2011-11-02 2012-04-25 上海宏力半导体制造有限公司 光阻去除方法
ES2564426B2 (es) 2014-09-19 2016-09-12 Universidad De Oviedo Marcador de patologías oculares
US10073351B2 (en) * 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
TWI692679B (zh) * 2017-12-22 2020-05-01 美商慧盛材料美國責任有限公司 光阻剝除劑
KR102391389B1 (ko) * 2021-09-15 2022-04-28 (주)네프코 세정 용이성 및 내마모성이 우수한 친환경 포토마스크 및 이의 제조방법
CN113832471B (zh) * 2021-09-26 2024-03-08 苏州至绒新能源科技有限公司 一种用于快速剥离聚酰亚胺薄膜的清洗剂及其应用

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009005014A1 (ja) * 2007-07-03 2009-01-08 Toagosei Co., Ltd. レジスト剥離剤組成物
JP2009014938A (ja) * 2007-07-03 2009-01-22 Toagosei Co Ltd レジスト剥離剤組成物
JP2012522264A (ja) * 2009-03-27 2012-09-20 イーストマン ケミカル カンパニー 有機物質を除去するための組成物及び方法
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
JP2013540171A (ja) * 2010-09-27 2013-10-31 イーストマン ケミカル カンパニー 基材から物質を除去するための方法および組成物

Also Published As

Publication number Publication date
CN1316317C (zh) 2007-05-16
WO2000003306A1 (en) 2000-01-20
TW544551B (en) 2003-08-01
DE69934229D1 (de) 2007-01-11
EP1097405A1 (en) 2001-05-09
CN1308737A (zh) 2001-08-15
MY117049A (en) 2004-04-30
KR20010053454A (ko) 2001-06-25
EP1097405B1 (en) 2006-11-29
KR100602463B1 (ko) 2006-07-19
DE69934229T2 (de) 2007-10-25
US6368421B1 (en) 2002-04-09

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