TW544551B - Composition for stripping photoresist and organic materials from substrate surfaces - Google Patents
Composition for stripping photoresist and organic materials from substrate surfaces Download PDFInfo
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- TW544551B TW544551B TW088110333A TW88110333A TW544551B TW 544551 B TW544551 B TW 544551B TW 088110333 A TW088110333 A TW 088110333A TW 88110333 A TW88110333 A TW 88110333A TW 544551 B TW544551 B TW 544551B
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- UXTDFLRBGKNCQW-UHFFFAOYSA-N butane cyclobutane Chemical compound CCCC.C1CCC1 UXTDFLRBGKNCQW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 235000019693 cherries Nutrition 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical class CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 231100000584 environmental toxicity Toxicity 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- IWPRJTUCJJRGSK-GOTSBHOMSA-N n-[(2s)-3-methyl-1-oxo-1-[[(2s)-1-oxo-3-phenylpropan-2-yl]amino]butan-2-yl]naphthalene-2-carboxamide Chemical compound C([C@H](NC(=O)[C@@H](NC(=O)C=1C=C2C=CC=CC2=CC=1)C(C)C)C=O)C1=CC=CC=C1 IWPRJTUCJJRGSK-GOTSBHOMSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- CBFCDTFDPHXCNY-UHFFFAOYSA-N octyldodecane Natural products CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 1
- 230000021962 pH elevation Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- MBDNRNMVTZADMQ-UHFFFAOYSA-N sulfolene Chemical compound O=S1(=O)CC=CC1 MBDNRNMVTZADMQ-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- ISXOBTBCNRIIQO-UHFFFAOYSA-N tetrahydrothiophene 1-oxide Chemical compound O=S1CCCC1 ISXOBTBCNRIIQO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Emergency Medicine (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/113,892 US6368421B1 (en) | 1998-07-10 | 1998-07-10 | Composition for stripping photoresist and organic materials from substrate surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW544551B true TW544551B (en) | 2003-08-01 |
Family
ID=22352158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088110333A TW544551B (en) | 1998-07-10 | 1999-06-21 | Composition for stripping photoresist and organic materials from substrate surfaces |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6368421B1 (https=) |
| EP (1) | EP1097405B1 (https=) |
| JP (1) | JP2002520659A (https=) |
| KR (1) | KR100602463B1 (https=) |
| CN (1) | CN1316317C (https=) |
| DE (1) | DE69934229T2 (https=) |
| MY (1) | MY117049A (https=) |
| TW (1) | TW544551B (https=) |
| WO (1) | WO2000003306A1 (https=) |
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| US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| US6319835B1 (en) * | 2000-02-25 | 2001-11-20 | Shipley Company, L.L.C. | Stripping method |
| KR100360985B1 (ko) * | 2000-04-26 | 2002-11-18 | 주식회사 동진쎄미켐 | 레지스트 스트리퍼 조성물 |
| CA2446140C (en) * | 2000-05-02 | 2008-11-18 | Tribond, Inc. | Temperature-controlled induction heating of polymeric materials |
| KR20020072595A (ko) * | 2001-03-12 | 2002-09-18 | (주)에스티디 | 동판의 산화막 형성방법 및 이에 의해 제조된 동판 |
| KR100429455B1 (ko) * | 2001-06-11 | 2004-05-04 | 동우 화인켐 주식회사 | 포토레지스트의 에지 비드를 제거하는 세정용액 및 이를이용한 세정방법 |
| KR100772810B1 (ko) * | 2001-12-18 | 2007-11-01 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
| KR100772809B1 (ko) * | 2001-12-18 | 2007-11-01 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
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| US20030196685A1 (en) * | 2001-12-18 | 2003-10-23 | Shipley Company, L.L.C. | Cleaning composition and method |
| EP1468335A4 (en) * | 2002-01-11 | 2006-05-17 | Az Electronic Materials Usa | CLEANER COMPOSITION FOR A POSITIVE OR NEGATIVE PHOTOGRAPHIST |
| JP4045180B2 (ja) * | 2002-12-03 | 2008-02-13 | Ａｚエレクトロニックマテリアルズ株式会社 | リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法 |
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| US7867696B2 (en) * | 2004-04-15 | 2011-01-11 | The Boeing Company | Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes |
| KR20050101458A (ko) * | 2004-04-19 | 2005-10-24 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법 |
| TWI253888B (en) * | 2004-12-09 | 2006-04-21 | Advanced Semiconductor Eng | Method of packaging flip chip and method of forming pre-solders on substrate thereof |
| KR100690347B1 (ko) * | 2005-04-09 | 2007-03-09 | 주식회사 엘지화학 | 박리액 조성물, 이를 이용한 박리 방법 및 그 박리 장치 |
| US20070099810A1 (en) * | 2005-10-27 | 2007-05-03 | Hiroshi Matsunaga | Cleaning liquid and cleaning method |
| JP5000260B2 (ja) * | 2006-10-19 | 2012-08-15 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液 |
| JP2009014938A (ja) * | 2007-07-03 | 2009-01-22 | Toagosei Co Ltd | レジスト剥離剤組成物 |
| JP5306755B2 (ja) * | 2008-09-16 | 2013-10-02 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 基板処理液およびそれを用いたレジスト基板処理方法 |
| KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
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| JP6165442B2 (ja) * | 2009-07-30 | 2017-07-19 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 |
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| CN102436153B (zh) * | 2011-10-28 | 2013-06-19 | 绍兴文理学院 | 印花网版感光胶剥离剂 |
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| US5612303B1 (en) * | 1993-06-15 | 2000-07-18 | Nitto Chemical Industry Co Ltd | Solvent composition |
| JP3233379B2 (ja) | 1993-08-26 | 2001-11-26 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| US5419779A (en) | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
| JPH07199455A (ja) | 1993-12-28 | 1995-08-04 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
| US5545353A (en) | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
| US5597678A (en) | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
| US5554312A (en) | 1995-01-13 | 1996-09-10 | Ashland | Photoresist stripping composition |
| US5563119A (en) | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
| US5541033A (en) | 1995-02-01 | 1996-07-30 | Ocg Microelectronic Materials, Inc. | Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions |
| US5733948A (en) * | 1995-09-06 | 1998-03-31 | Mac Dermid, Imaging Technology, Inc. | Tack-free photopolymer printing plate |
| JP2802990B2 (ja) * | 1995-12-19 | 1998-09-24 | 株式会社ハクリバー | 清浄剤 |
-
1998
- 1998-07-10 US US09/113,892 patent/US6368421B1/en not_active Expired - Lifetime
-
1999
- 1999-06-21 TW TW088110333A patent/TW544551B/zh not_active IP Right Cessation
- 1999-06-30 JP JP2000559485A patent/JP2002520659A/ja active Pending
- 1999-06-30 EP EP99931215A patent/EP1097405B1/en not_active Expired - Lifetime
- 1999-06-30 CN CNB998084689A patent/CN1316317C/zh not_active Expired - Lifetime
- 1999-06-30 WO PCT/EP1999/004498 patent/WO2000003306A1/en not_active Ceased
- 1999-06-30 DE DE69934229T patent/DE69934229T2/de not_active Expired - Lifetime
- 1999-06-30 KR KR1020017000338A patent/KR100602463B1/ko not_active Expired - Lifetime
- 1999-07-09 MY MYPI99002913A patent/MY117049A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1316317C (zh) | 2007-05-16 |
| WO2000003306A1 (en) | 2000-01-20 |
| DE69934229D1 (de) | 2007-01-11 |
| JP2002520659A (ja) | 2002-07-09 |
| EP1097405A1 (en) | 2001-05-09 |
| CN1308737A (zh) | 2001-08-15 |
| MY117049A (en) | 2004-04-30 |
| KR20010053454A (ko) | 2001-06-25 |
| EP1097405B1 (en) | 2006-11-29 |
| KR100602463B1 (ko) | 2006-07-19 |
| DE69934229T2 (de) | 2007-10-25 |
| US6368421B1 (en) | 2002-04-09 |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |