KR100772809B1 - 포토레지스트 세정액 조성물 - Google Patents
포토레지스트 세정액 조성물 Download PDFInfo
- Publication number
- KR100772809B1 KR100772809B1 KR1020010080572A KR20010080572A KR100772809B1 KR 100772809 B1 KR100772809 B1 KR 100772809B1 KR 1020010080572 A KR1020010080572 A KR 1020010080572A KR 20010080572 A KR20010080572 A KR 20010080572A KR 100772809 B1 KR100772809 B1 KR 100772809B1
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- liquid composition
- cleaning liquid
- present
- photoresist pattern
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 67
- 238000004140 cleaning Methods 0.000 title claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 12
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- -1 alcohol compound Chemical class 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 6
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 4
- 125000005233 alkylalcohol group Chemical group 0.000 claims description 4
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 4
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 claims description 4
- AQIXEPGDORPWBJ-UHFFFAOYSA-N pentan-3-ol Chemical compound CCC(O)CC AQIXEPGDORPWBJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 2
- OEYNWAWWSZUGDU-UHFFFAOYSA-N 1-methoxypropane-1,2-diol Chemical compound COC(O)C(C)O OEYNWAWWSZUGDU-UHFFFAOYSA-N 0.000 claims 1
- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 7
- 239000012153 distilled water Substances 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- PSJBSUHYCGQTHZ-UHFFFAOYSA-N 3-Methoxy-1,2-propanediol Chemical compound COCC(O)CO PSJBSUHYCGQTHZ-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C11D2111/22—
Abstract
Description
Claims (8)
- 삭제
- 제 1 항에 있어서,상기 알코올 화합물은 C1-C10의 알킬 알코올 및 C1-C10의 알콕시알코올로 이루어진 군으로부터 선택된 것을 단독으로 또는 혼합하여 사용하는 것을 특징으로 하는 포토레지스트 세정액 조성물.
- 제 3 항에 있어서,상기 C1-C10의 알킬 알코올은 메탄올, 에탄올, 프로판올, 이소프로판올, n-부탄올, sec-부탄올, t-부탄올, 1-펜탄올, 2-펜탄올, 3-펜탄올 및 2,2-디메틸-1-프로판올로 이루어진 군으로부터 선택되고, 상기 C1-C10의 알콕시알코올은 2-메톡시에탄올, 2-(2-메톡시에톡시)에탄올, 1-메톡시-2-프로판올 및 3-메톡시-1,2-프로판디올로 이루어진 군으로부터 선택되는 것을 특징으로 하는 포토레지스트 세정액 조성물.
- (a) 반도체 기판에 형성된 피식각층 상부에 포토레지스트를 도포하고, 소프트 베이크하여 포토레지스트 막을 형성하는 단계;(b) 상기 포토레지스트 막을 노광원으로 노광하는 단계;(c) 상기 노광된 포토레지스트 막을 베이크하는 단계;(d) 상기 포토레지스트막을 현상하여 포토레지스트 패턴을 형성하는 단계; 및(e) 상기 결과물을 제 1 항에 기재된 세정액 조성물로 세정하는 단계를 포함하는 것을 특징으로 하는 포토레지스트 패턴 형성방법.
- 삭제
- 제 5 항에 있어서,상기 노광원은 VUV, ArF, KrF, EUV, E-빔, X-선 및 이온빔으로 이루어진 군으로부터 선택된 것을 특징으로 하는 포토레지스트 패턴 형성방법.
- 제 5 항 기재의 방법을 이용하여 제조된 반도체 소자.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010080572A KR100772809B1 (ko) | 2001-12-18 | 2001-12-18 | 포토레지스트 세정액 조성물 |
US10/317,578 US7563753B2 (en) | 2001-12-12 | 2002-12-12 | Cleaning solution for removing photoresist |
CNB021518629A CN1240816C (zh) | 2001-12-12 | 2002-12-12 | 除去光致抗蚀剂的洗涤液 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010080572A KR100772809B1 (ko) | 2001-12-18 | 2001-12-18 | 포토레지스트 세정액 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030050173A KR20030050173A (ko) | 2003-06-25 |
KR100772809B1 true KR100772809B1 (ko) | 2007-11-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010080572A KR100772809B1 (ko) | 2001-12-12 | 2001-12-18 | 포토레지스트 세정액 조성물 |
Country Status (1)
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KR (1) | KR100772809B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017187609A (ja) | 2016-04-05 | 2017-10-12 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ギャップフィリング組成物および低分子化合物を用いたパターン形成方法 |
JP2017215561A (ja) | 2016-05-30 | 2017-12-07 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ギャップフィリング組成物、およびポリマーを含んでなる組成物を用いたパターン形成方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000003306A1 (en) * | 1998-07-10 | 2000-01-20 | Clariant International, Ltd. | Composition for stripping photoresist and organic materials from substrate surfaces |
-
2001
- 2001-12-18 KR KR1020010080572A patent/KR100772809B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000003306A1 (en) * | 1998-07-10 | 2000-01-20 | Clariant International, Ltd. | Composition for stripping photoresist and organic materials from substrate surfaces |
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KR20030050173A (ko) | 2003-06-25 |
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