CN1316317C - 用来从基质表面剥离光阻材料和有机材料的组合物 - Google Patents

用来从基质表面剥离光阻材料和有机材料的组合物 Download PDF

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Publication number
CN1316317C
CN1316317C CNB998084689A CN99808468A CN1316317C CN 1316317 C CN1316317 C CN 1316317C CN B998084689 A CNB998084689 A CN B998084689A CN 99808468 A CN99808468 A CN 99808468A CN 1316317 C CN1316317 C CN 1316317C
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CN
China
Prior art keywords
weight
composition
stripping composition
photoresist
evaluated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB998084689A
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English (en)
Chinese (zh)
Other versions
CN1308737A (zh
Inventor
J·E·欧波兰德
M·S·斯莱加克
D·N·坎纳
D·L·德汉姆
L·斯皮尼塞利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Clariant International Ltd
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant International Ltd, AZ Electronic Materials Japan Co Ltd filed Critical Clariant International Ltd
Publication of CN1308737A publication Critical patent/CN1308737A/zh
Application granted granted Critical
Publication of CN1316317C publication Critical patent/CN1316317C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB998084689A 1998-07-10 1999-06-30 用来从基质表面剥离光阻材料和有机材料的组合物 Expired - Lifetime CN1316317C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/113,892 US6368421B1 (en) 1998-07-10 1998-07-10 Composition for stripping photoresist and organic materials from substrate surfaces
US09/113,892 1998-07-10

Publications (2)

Publication Number Publication Date
CN1308737A CN1308737A (zh) 2001-08-15
CN1316317C true CN1316317C (zh) 2007-05-16

Family

ID=22352158

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB998084689A Expired - Lifetime CN1316317C (zh) 1998-07-10 1999-06-30 用来从基质表面剥离光阻材料和有机材料的组合物

Country Status (9)

Country Link
US (1) US6368421B1 (https=)
EP (1) EP1097405B1 (https=)
JP (1) JP2002520659A (https=)
KR (1) KR100602463B1 (https=)
CN (1) CN1316317C (https=)
DE (1) DE69934229T2 (https=)
MY (1) MY117049A (https=)
TW (1) TW544551B (https=)
WO (1) WO2000003306A1 (https=)

Families Citing this family (40)

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US20090127253A1 (en) * 1997-06-06 2009-05-21 Philip Stark Temperature-controlled induction heating of polymeric materials
US6939477B2 (en) 1997-06-06 2005-09-06 Ashland, Inc. Temperature-controlled induction heating of polymeric materials
US7348300B2 (en) 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US7521405B2 (en) 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US6319835B1 (en) * 2000-02-25 2001-11-20 Shipley Company, L.L.C. Stripping method
KR100360985B1 (ko) * 2000-04-26 2002-11-18 주식회사 동진쎄미켐 레지스트 스트리퍼 조성물
CA2446140C (en) * 2000-05-02 2008-11-18 Tribond, Inc. Temperature-controlled induction heating of polymeric materials
KR20020072595A (ko) * 2001-03-12 2002-09-18 (주)에스티디 동판의 산화막 형성방법 및 이에 의해 제조된 동판
KR100429455B1 (ko) * 2001-06-11 2004-05-04 동우 화인켐 주식회사 포토레지스트의 에지 비드를 제거하는 세정용액 및 이를이용한 세정방법
KR100772810B1 (ko) * 2001-12-18 2007-11-01 주식회사 하이닉스반도체 포토레지스트 세정액 조성물
KR100772809B1 (ko) * 2001-12-18 2007-11-01 주식회사 하이닉스반도체 포토레지스트 세정액 조성물
US7563753B2 (en) 2001-12-12 2009-07-21 Hynix Semiconductor Inc. Cleaning solution for removing photoresist
US20030196685A1 (en) * 2001-12-18 2003-10-23 Shipley Company, L.L.C. Cleaning composition and method
EP1468335A4 (en) * 2002-01-11 2006-05-17 Az Electronic Materials Usa CLEANER COMPOSITION FOR A POSITIVE OR NEGATIVE PHOTOGRAPHIST
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
US20040259746A1 (en) * 2003-06-20 2004-12-23 Warren Jonathan N. Concentrate composition and process for removing coatings from surfaces such as paint application equipment
US7018939B2 (en) * 2003-07-11 2006-03-28 Motorola, Inc. Micellar technology for post-etch residues
WO2005045895A2 (en) 2003-10-28 2005-05-19 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US7867696B2 (en) * 2004-04-15 2011-01-11 The Boeing Company Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes
KR20050101458A (ko) * 2004-04-19 2005-10-24 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법
TWI253888B (en) * 2004-12-09 2006-04-21 Advanced Semiconductor Eng Method of packaging flip chip and method of forming pre-solders on substrate thereof
KR100690347B1 (ko) * 2005-04-09 2007-03-09 주식회사 엘지화학 박리액 조성물, 이를 이용한 박리 방법 및 그 박리 장치
US20070099810A1 (en) * 2005-10-27 2007-05-03 Hiroshi Matsunaga Cleaning liquid and cleaning method
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP2009014938A (ja) * 2007-07-03 2009-01-22 Toagosei Co Ltd レジスト剥離剤組成物
JP5306755B2 (ja) * 2008-09-16 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 基板処理液およびそれを用いたレジスト基板処理方法
KR101579846B1 (ko) * 2008-12-24 2015-12-24 주식회사 이엔에프테크놀로지 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법
CN102334069B (zh) 2009-02-25 2013-07-10 安万托特性材料股份有限公司 基于多用途酸性有机溶剂的微电子清洗组合物
US8614053B2 (en) * 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
JP6165442B2 (ja) * 2009-07-30 2017-07-19 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
WO2012161790A1 (en) * 2011-02-24 2012-11-29 John Moore Concentrated chemical composition and method for removing photoresist during microelectric fabrication
CN102436153B (zh) * 2011-10-28 2013-06-19 绍兴文理学院 印花网版感光胶剥离剂
CN102427039A (zh) * 2011-11-02 2012-04-25 上海宏力半导体制造有限公司 光阻去除方法
ES2564426B2 (es) 2014-09-19 2016-09-12 Universidad De Oviedo Marcador de patologías oculares
US10073351B2 (en) * 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
TWI692679B (zh) * 2017-12-22 2020-05-01 美商慧盛材料美國責任有限公司 光阻剝除劑
KR102391389B1 (ko) * 2021-09-15 2022-04-28 (주)네프코 세정 용이성 및 내마모성이 우수한 친환경 포토마스크 및 이의 제조방법
CN113832471B (zh) * 2021-09-26 2024-03-08 苏州至绒新能源科技有限公司 一种用于快速剥离聚酰亚胺薄膜的清洗剂及其应用

Citations (7)

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Publication number Priority date Publication date Assignee Title
GB1487737A (en) * 1973-11-05 1977-10-05 Nat Res Dev Paint removers
US4395348A (en) * 1981-11-23 1983-07-26 Ekc Technology, Inc. Photoresist stripping composition and method
US4491530A (en) * 1983-05-20 1985-01-01 Allied Corporation Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper
JPS63163457A (ja) * 1986-12-26 1988-07-06 Asahi Chem Ind Co Ltd フオトレジスト用剥離剤組成物
US4781804A (en) * 1988-03-02 1988-11-01 Delco Electronics Corporation Electrolytic organic mold flash removal
US5102573A (en) * 1987-04-10 1992-04-07 Colgate Palmolive Co. Detergent composition
JPH09169998A (ja) * 1995-12-19 1997-06-30 Hakuribaa:Kk 清浄剤および清浄法

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JP2553872B2 (ja) 1987-07-21 1996-11-13 東京応化工業株式会社 ホトレジスト用剥離液
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US5185235A (en) 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
JP2591626B2 (ja) 1987-09-16 1997-03-19 東京応化工業株式会社 レジスト用剥離液
US4853315A (en) 1988-01-15 1989-08-01 International Business Machines Corporation O-quinone diazide sulfonic acid monoesters useful as sensitizers for positive resists
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JPH07199455A (ja) 1993-12-28 1995-08-04 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
US5545353A (en) 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5597678A (en) 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5554312A (en) 1995-01-13 1996-09-10 Ashland Photoresist stripping composition
US5563119A (en) 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US5541033A (en) 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1487737A (en) * 1973-11-05 1977-10-05 Nat Res Dev Paint removers
US4395348A (en) * 1981-11-23 1983-07-26 Ekc Technology, Inc. Photoresist stripping composition and method
US4491530A (en) * 1983-05-20 1985-01-01 Allied Corporation Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper
JPS63163457A (ja) * 1986-12-26 1988-07-06 Asahi Chem Ind Co Ltd フオトレジスト用剥離剤組成物
US5102573A (en) * 1987-04-10 1992-04-07 Colgate Palmolive Co. Detergent composition
US4781804A (en) * 1988-03-02 1988-11-01 Delco Electronics Corporation Electrolytic organic mold flash removal
JPH09169998A (ja) * 1995-12-19 1997-06-30 Hakuribaa:Kk 清浄剤および清浄法

Also Published As

Publication number Publication date
WO2000003306A1 (en) 2000-01-20
TW544551B (en) 2003-08-01
DE69934229D1 (de) 2007-01-11
JP2002520659A (ja) 2002-07-09
EP1097405A1 (en) 2001-05-09
CN1308737A (zh) 2001-08-15
MY117049A (en) 2004-04-30
KR20010053454A (ko) 2001-06-25
EP1097405B1 (en) 2006-11-29
KR100602463B1 (ko) 2006-07-19
DE69934229T2 (de) 2007-10-25
US6368421B1 (en) 2002-04-09

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