CN1316317C - 用来从基质表面剥离光阻材料和有机材料的组合物 - Google Patents
用来从基质表面剥离光阻材料和有机材料的组合物 Download PDFInfo
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- CN1316317C CN1316317C CNB998084689A CN99808468A CN1316317C CN 1316317 C CN1316317 C CN 1316317C CN B998084689 A CNB998084689 A CN B998084689A CN 99808468 A CN99808468 A CN 99808468A CN 1316317 C CN1316317 C CN 1316317C
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- 239000000203 mixture Substances 0.000 title claims abstract description 129
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 74
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- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 47
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- 239000004411 aluminium Substances 0.000 claims description 8
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- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 claims 1
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- 239000003795 chemical substances by application Substances 0.000 description 2
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
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- 238000010894 electron beam technology Methods 0.000 description 2
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- 238000005507 spraying Methods 0.000 description 2
- 150000003457 sulfones Chemical class 0.000 description 2
- 150000003462 sulfoxides Chemical class 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- UWQPDVZUOZVCBH-UHFFFAOYSA-N 2-diazonio-4-oxo-3h-naphthalen-1-olate Chemical class C1=CC=C2C(=O)C(=[N+]=[N-])CC(=O)C2=C1 UWQPDVZUOZVCBH-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
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- 241000167854 Bourreria succulenta Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 101100152661 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) TDA9 gene Proteins 0.000 description 1
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- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
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- 150000001298 alcohols Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
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- 150000003863 ammonium salts Chemical class 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
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- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
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- MHYFEEDKONKGEB-UHFFFAOYSA-N oxathiane 2,2-dioxide Chemical compound O=S1(=O)CCCCO1 MHYFEEDKONKGEB-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000006462 rearrangement reaction Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 150000008053 sultones Chemical class 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- ISXOBTBCNRIIQO-UHFFFAOYSA-N tetrahydrothiophene 1-oxide Chemical compound O=S1CCCC1 ISXOBTBCNRIIQO-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Emergency Medicine (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
剥离剂 | 清除时间@室温/AZP41102.5微米140℃ HB(分钟:秒) | 清除时间@90℃/AZP43304微米140℃ HB(分钟:秒) | 清除时间@90℃AZP43304微米150℃ HB(分钟:秒) | 清除时间@90℃AZP43304微米160℃ HB(分钟:秒) |
实施例1 | 2:30 | 0:20图案90%清除 | 15分钟后:图案60%清除 | 15分钟后:图案100%可见 |
实施例2 | 2:00 | 0:20 | 15分钟后:图案70%清除 | 15分钟后:图案100%可见 |
实施例3 | 2:00 | 0:20图案90%清除 | 15分钟后:图案清除 | 15分钟后:图案60%可见 |
实施例4 | 2:00 | 0:20 | 15分钟后:图案清除 | 15分钟后:图案100%可见 |
实施例5 | 3:15 | 0:30 | 剩余未曝光的光阻材料 | 未曝光的和图案化的光阻材料仍都可见 |
实施例6 | 2:00 | 0:30 | 剩余未曝光的光阻材料 | 未曝光的和图案化的光阻材料仍都可见 |
实施例7 | 3:00斑点可见 | |||
实施例8 | 1:45 | 0:30 | 10:30图案可见 | 在15分钟时清除,图案可见 |
实施例9 | 3:15 |
剥离剂 | 清除时间@室温AZP41102.5微米140℃HB(分钟:秒) | 清除时间@90℃AZP41102.5微米140℃HB(分钟:秒) | 清除时间@90℃AZP41102.5微米150℃HB(分钟:秒) | 清除时间@室温AZP46206微米150℃HB(分钟:秒) | 清除时间@90℃AZP46206微米150℃HB(分钟:秒) | 清除时间@90℃AZP46206微米150℃HB(分钟:秒) |
实施例10 | >15:0015%没有清除 | 0:45 | 3:30 | 4:00 | ||
实施例11 | 4:504:154:05 | 0:40 | 0:30 | 15:0未清除 | 2:30 | 5:00 |
实施例12 | 2:35 | |||||
实施例13 | 2:50 | |||||
实施例14 | 2:40 | 0:30白色薄雾 | 15:00白色薄雾 | 15:00薄雾和光阻材料都可见 | ||
实施例15 | 6:45 | 0:20 | 3:30 | |||
实施例16 | 2:45 |
实施例 | 剥离剂在室温且在90℃下硬化烘焙1分钟的清除时间(秒) | 剥离剂在60℃且在90℃下硬化烘焙1分钟的清除时间(秒) | 剥离剂在室温且在140℃下硬化烘焙30分钟的清除时间(秒) |
17 | l80 | 60 | 90 |
18 | 90 | 45 | 90 |
19 | 30 | 20 | 30 |
20 | 60 | 30 | 60 |
21 | 330 | 60 | 600+ |
实施例 | 剥离剂于室温且于90℃硬化烘焙1分钟的清除时间(秒) | 剥离剂于室温且于l40℃硬化烘焙30秒的清除时间(秒) |
22 | 45 | 150 |
23 | 105 | 270 |
24 | 60 | 120 |
25 | 45,胶片上有斑点 | 124,胶片上有斑点 |
26 | 60,胶片上有斑点 | 70,胶片上有斑点 |
27 | 150 | 300 |
28 | 600+ | --- |
29 | 600+ | 600+ |
30 | 600+ | |
31 | 400 | 600+ |
32 | 180 | 600+ |
33 | 600+ | --- |
34 | 200 | 400 |
35 | 300 | 600+ |
36 | 120 | 120 |
37 | 600+ | --- |
38 | 600+ | --- |
39 | 90 | 600+ |
40 | 90 | 600+ |
41 | 90 | 600+ |
42 | 600+ | --- |
43 | 540 | 600 |
实施例 | 剥离剂在室温且于140℃硬化烘焙30分钟的清除时间(分钟:秒) |
44 | 6:50 |
45 | 3:05 |
46 | 3:00 |
47 | 3:00 |
48 | 3:30 |
49 | 2:45 |
50 | 3:00 |
51 | 8:00 |
52 | 7:05 |
53 | 5:05 |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/113,892 | 1998-07-10 | ||
US09/113,892 US6368421B1 (en) | 1998-07-10 | 1998-07-10 | Composition for stripping photoresist and organic materials from substrate surfaces |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1308737A CN1308737A (zh) | 2001-08-15 |
CN1316317C true CN1316317C (zh) | 2007-05-16 |
Family
ID=22352158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998084689A Expired - Lifetime CN1316317C (zh) | 1998-07-10 | 1999-06-30 | 用来从基质表面剥离光阻材料和有机材料的组合物 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6368421B1 (zh) |
EP (1) | EP1097405B1 (zh) |
JP (1) | JP2002520659A (zh) |
KR (1) | KR100602463B1 (zh) |
CN (1) | CN1316317C (zh) |
DE (1) | DE69934229T2 (zh) |
MY (1) | MY117049A (zh) |
TW (1) | TW544551B (zh) |
WO (1) | WO2000003306A1 (zh) |
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Also Published As
Publication number | Publication date |
---|---|
DE69934229D1 (de) | 2007-01-11 |
EP1097405B1 (en) | 2006-11-29 |
WO2000003306A1 (en) | 2000-01-20 |
CN1308737A (zh) | 2001-08-15 |
DE69934229T2 (de) | 2007-10-25 |
KR20010053454A (ko) | 2001-06-25 |
US6368421B1 (en) | 2002-04-09 |
TW544551B (en) | 2003-08-01 |
EP1097405A1 (en) | 2001-05-09 |
KR100602463B1 (ko) | 2006-07-19 |
JP2002520659A (ja) | 2002-07-09 |
MY117049A (en) | 2004-04-30 |
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