JP2002505531A - 大領域ガラス基板のコーティング及びアニーリング方法 - Google Patents

大領域ガラス基板のコーティング及びアニーリング方法

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Publication number
JP2002505531A
JP2002505531A JP2000534694A JP2000534694A JP2002505531A JP 2002505531 A JP2002505531 A JP 2002505531A JP 2000534694 A JP2000534694 A JP 2000534694A JP 2000534694 A JP2000534694 A JP 2000534694A JP 2002505531 A JP2002505531 A JP 2002505531A
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JP
Japan
Prior art keywords
substrate
temperature
glass substrate
chamber
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000534694A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002505531A5 (US06294219-20010925-M00002.png
Inventor
チュアン−チュアン ツァイ，
タカコ タケハラ，
レジーナ キュー，
ユヴォンヌ レグリス，
ロバート， マコーミック ロバートソン，
Original Assignee
エーケーティー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーケーティー株式会社 filed Critical エーケーティー株式会社
Publication of JP2002505531A publication Critical patent/JP2002505531A/ja
Publication of JP2002505531A5 publication Critical patent/JP2002505531A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
JP2000534694A 1998-03-03 1999-03-01 大領域ガラス基板のコーティング及びアニーリング方法 Pending JP2002505531A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/033,868 US6294219B1 (en) 1998-03-03 1998-03-03 Method of annealing large area glass substrates
US09/033,868 1998-03-03
PCT/US1999/004399 WO1999045164A1 (en) 1998-03-03 1999-03-01 Method of coating and annealing large area glass substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010149762A Division JP2010272875A (ja) 1998-03-03 2010-06-30 大領域ガラス基板のコーティング及びアニーリング方法

Publications (2)

Publication Number Publication Date
JP2002505531A true JP2002505531A (ja) 2002-02-19
JP2002505531A5 JP2002505531A5 (US06294219-20010925-M00002.png) 2006-04-20

Family

ID=21872918

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2000534694A Pending JP2002505531A (ja) 1998-03-03 1999-03-01 大領域ガラス基板のコーティング及びアニーリング方法
JP2010149762A Pending JP2010272875A (ja) 1998-03-03 2010-06-30 大領域ガラス基板のコーティング及びアニーリング方法
JP2013012791A Pending JP2013140990A (ja) 1998-03-03 2013-01-28 大領域ガラス基板のコーティング及びアニーリング方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010149762A Pending JP2010272875A (ja) 1998-03-03 2010-06-30 大領域ガラス基板のコーティング及びアニーリング方法
JP2013012791A Pending JP2013140990A (ja) 1998-03-03 2013-01-28 大領域ガラス基板のコーティング及びアニーリング方法

Country Status (6)

Country Link
US (2) US6294219B1 (US06294219-20010925-M00002.png)
JP (3) JP2002505531A (US06294219-20010925-M00002.png)
KR (1) KR100658235B1 (US06294219-20010925-M00002.png)
CN (1) CN1149304C (US06294219-20010925-M00002.png)
TW (1) TW480245B (US06294219-20010925-M00002.png)
WO (1) WO1999045164A1 (US06294219-20010925-M00002.png)

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JP2013140990A (ja) * 1998-03-03 2013-07-18 Akt Kk 大領域ガラス基板のコーティング及びアニーリング方法
JP2016184740A (ja) * 2009-09-04 2016-10-20 株式会社半導体エネルギー研究所 表示装置の作製方法
JP2020528670A (ja) * 2017-07-24 2020-09-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 酸化ケイ素上の超薄型アモルファスシリコン膜の連続性を向上させるための前処理手法

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US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
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US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US7118784B1 (en) * 2005-06-27 2006-10-10 The Regents Of The University Of California Method and apparatus for controlling nucleation in self-assembled films
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
JP4951301B2 (ja) * 2006-09-25 2012-06-13 富士フイルム株式会社 光学フィルムの乾燥方法及び装置並びに光学フィルムの製造方法
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WO2012003139A1 (en) * 2010-06-30 2012-01-05 First Solar, Inc. High-temperature activation process
DE102011089884B4 (de) * 2011-08-19 2016-03-10 Von Ardenne Gmbh Niedrigemittierende Beschichtung und Verfahren zur Herstellung eines niedrigemittierenden Schichtsystems
CN102655089B (zh) 2011-11-18 2015-08-12 京东方科技集团股份有限公司 一种低温多晶硅薄膜的制作方法
CN103820767B (zh) * 2013-12-27 2016-04-06 中国科学院上海微系统与信息技术研究所 一种改善多晶硅薄膜质量的前处理工艺
CN106064845B (zh) * 2016-05-25 2019-02-22 安徽普氏生态环境工程有限公司 一种用于污水处理的稀土元素掺杂石墨稀电极的制备方法
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Publication number Priority date Publication date Assignee Title
JP2013140990A (ja) * 1998-03-03 2013-07-18 Akt Kk 大領域ガラス基板のコーティング及びアニーリング方法
JP2016184740A (ja) * 2009-09-04 2016-10-20 株式会社半導体エネルギー研究所 表示装置の作製方法
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JP2018026569A (ja) * 2009-09-04 2018-02-15 株式会社半導体エネルギー研究所 表示装置の作製方法
JP2020061559A (ja) * 2009-09-04 2020-04-16 株式会社半導体エネルギー研究所 表示装置の作製方法
JP2020528670A (ja) * 2017-07-24 2020-09-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 酸化ケイ素上の超薄型アモルファスシリコン膜の連続性を向上させるための前処理手法
JP7242631B2 (ja) 2017-07-24 2023-03-20 アプライド マテリアルズ インコーポレイテッド 酸化ケイ素上の超薄型アモルファスシリコン膜の連続性を向上させるための前処理手法

Also Published As

Publication number Publication date
US6610374B2 (en) 2003-08-26
TW480245B (en) 2002-03-21
US20020018862A1 (en) 2002-02-14
JP2013140990A (ja) 2013-07-18
US6294219B1 (en) 2001-09-25
KR20010041513A (ko) 2001-05-25
JP2010272875A (ja) 2010-12-02
KR100658235B1 (ko) 2006-12-14
WO1999045164A1 (en) 1999-09-10
CN1292040A (zh) 2001-04-18
CN1149304C (zh) 2004-05-12

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