JP2002343811A5 - - Google Patents
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- Publication number
- JP2002343811A5 JP2002343811A5 JP2002058532A JP2002058532A JP2002343811A5 JP 2002343811 A5 JP2002343811 A5 JP 2002343811A5 JP 2002058532 A JP2002058532 A JP 2002058532A JP 2002058532 A JP2002058532 A JP 2002058532A JP 2002343811 A5 JP2002343811 A5 JP 2002343811A5
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- semiconductor film
- film
- conductive film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 102
- 238000005530 etching Methods 0.000 claims 12
- 239000007789 gas Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000000460 chlorine Substances 0.000 claims 7
- 239000012535 impurity Substances 0.000 claims 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 claims 1
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002058532A JP4267242B2 (ja) | 2001-03-06 | 2002-03-05 | 半導体装置及びその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-62690 | 2001-03-06 | ||
| JP2001-62677 | 2001-03-06 | ||
| JP2001062677 | 2001-03-06 | ||
| JP2001062690 | 2001-03-06 | ||
| JP2002058532A JP4267242B2 (ja) | 2001-03-06 | 2002-03-05 | 半導体装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002343811A JP2002343811A (ja) | 2002-11-29 |
| JP2002343811A5 true JP2002343811A5 (enExample) | 2005-09-02 |
| JP4267242B2 JP4267242B2 (ja) | 2009-05-27 |
Family
ID=27346179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002058532A Expired - Fee Related JP4267242B2 (ja) | 2001-03-06 | 2002-03-05 | 半導体装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4267242B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101253611B (zh) | 2005-09-30 | 2013-06-19 | 夏普株式会社 | 薄膜晶体管阵列衬底的制造方法 |
| US7615495B2 (en) * | 2005-11-17 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| KR101251995B1 (ko) | 2006-01-27 | 2013-04-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP2007212699A (ja) * | 2006-02-09 | 2007-08-23 | Idemitsu Kosan Co Ltd | 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法 |
| JP5063936B2 (ja) * | 2006-06-08 | 2012-10-31 | 三菱電機株式会社 | Ｔｆｔアレイ基板の製造方法 |
| US7897971B2 (en) * | 2007-07-26 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101452204B1 (ko) * | 2007-11-05 | 2014-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 상기 박막 트랜지스터를 구비하는 표시 장치 |
| TWI491048B (zh) | 2008-07-31 | 2015-07-01 | Semiconductor Energy Lab | 半導體裝置 |
| KR101667909B1 (ko) * | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| JP5308831B2 (ja) * | 2009-01-08 | 2013-10-09 | 三菱電機株式会社 | 積層構造体及びその製造方法 |
| US8741677B2 (en) * | 2010-11-30 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| US9059219B2 (en) * | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP6326752B2 (ja) * | 2013-09-12 | 2018-05-23 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
| KR102211967B1 (ko) * | 2013-10-28 | 2021-02-05 | 삼성디스플레이 주식회사 | 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치 |
-
2002
- 2002-03-05 JP JP2002058532A patent/JP4267242B2/ja not_active Expired - Fee Related
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