JP4267242B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4267242B2
JP4267242B2 JP2002058532A JP2002058532A JP4267242B2 JP 4267242 B2 JP4267242 B2 JP 4267242B2 JP 2002058532 A JP2002058532 A JP 2002058532A JP 2002058532 A JP2002058532 A JP 2002058532A JP 4267242 B2 JP4267242 B2 JP 4267242B2
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Japan
Prior art keywords
amorphous semiconductor
semiconductor film
film
conductive film
forming
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Expired - Fee Related
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JP2002058532A
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English (en)
Japanese (ja)
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JP2002343811A5 (enExample
JP2002343811A (ja
Inventor
英臣 須沢
義弘 楠山
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002058532A priority Critical patent/JP4267242B2/ja
Publication of JP2002343811A publication Critical patent/JP2002343811A/ja
Publication of JP2002343811A5 publication Critical patent/JP2002343811A5/ja
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  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2002058532A 2001-03-06 2002-03-05 半導体装置及びその作製方法 Expired - Fee Related JP4267242B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002058532A JP4267242B2 (ja) 2001-03-06 2002-03-05 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001-62677 2001-03-06
JP2001062677 2001-03-06
JP2001-62690 2001-03-06
JP2001062690 2001-03-06
JP2002058532A JP4267242B2 (ja) 2001-03-06 2002-03-05 半導体装置及びその作製方法

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JP2002343811A JP2002343811A (ja) 2002-11-29
JP2002343811A5 JP2002343811A5 (enExample) 2005-09-02
JP4267242B2 true JP4267242B2 (ja) 2009-05-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150048508A (ko) * 2013-10-28 2015-05-07 삼성디스플레이 주식회사 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5080978B2 (ja) 2005-09-30 2012-11-21 シャープ株式会社 薄膜トランジスタアレイ基板の製造方法
US7615495B2 (en) * 2005-11-17 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR101251995B1 (ko) 2006-01-27 2013-04-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP2007212699A (ja) * 2006-02-09 2007-08-23 Idemitsu Kosan Co Ltd 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法
JP5063936B2 (ja) * 2006-06-08 2012-10-31 三菱電機株式会社 Ｔｆｔアレイ基板の製造方法
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101452204B1 (ko) * 2007-11-05 2014-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 상기 박막 트랜지스터를 구비하는 표시 장치
TWI500159B (zh) * 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
KR101667909B1 (ko) * 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP5308831B2 (ja) * 2009-01-08 2013-10-09 三菱電機株式会社 積層構造体及びその製造方法
US8741677B2 (en) * 2010-11-30 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
US9059219B2 (en) * 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6326752B2 (ja) * 2013-09-12 2018-05-23 三菱電機株式会社 薄膜トランジスタおよびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150048508A (ko) * 2013-10-28 2015-05-07 삼성디스플레이 주식회사 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치
KR102211967B1 (ko) 2013-10-28 2021-02-05 삼성디스플레이 주식회사 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치

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JP2002343811A (ja) 2002-11-29

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