JP2002270616A - 薄いガリウム砒素アンチモン層をベースに用いた利得向上型ヘテロ接合バイポーラトランジスタ及びその製造方法 - Google Patents

薄いガリウム砒素アンチモン層をベースに用いた利得向上型ヘテロ接合バイポーラトランジスタ及びその製造方法

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Publication number
JP2002270616A
JP2002270616A JP2002050005A JP2002050005A JP2002270616A JP 2002270616 A JP2002270616 A JP 2002270616A JP 2002050005 A JP2002050005 A JP 2002050005A JP 2002050005 A JP2002050005 A JP 2002050005A JP 2002270616 A JP2002270616 A JP 2002270616A
Authority
JP
Japan
Prior art keywords
base
layer
emitter
gaassb
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002050005A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002270616A5 (enExample
Inventor
Nicolas J Moll
ニコラス・ジェイ・モール
Colombo R Bolognesi
コロンボ・アール・ボログネシ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2002270616A publication Critical patent/JP2002270616A/ja
Publication of JP2002270616A5 publication Critical patent/JP2002270616A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
JP2002050005A 2001-02-27 2002-02-26 薄いガリウム砒素アンチモン層をベースに用いた利得向上型ヘテロ接合バイポーラトランジスタ及びその製造方法 Pending JP2002270616A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US796299 1997-02-07
US09/796,299 US6762480B2 (en) 2001-02-27 2001-02-27 Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain

Publications (2)

Publication Number Publication Date
JP2002270616A true JP2002270616A (ja) 2002-09-20
JP2002270616A5 JP2002270616A5 (enExample) 2005-08-25

Family

ID=25167855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002050005A Pending JP2002270616A (ja) 2001-02-27 2002-02-26 薄いガリウム砒素アンチモン層をベースに用いた利得向上型ヘテロ接合バイポーラトランジスタ及びその製造方法

Country Status (3)

Country Link
US (2) US6762480B2 (enExample)
EP (1) EP1237199A3 (enExample)
JP (1) JP2002270616A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903387B2 (en) 2002-12-26 2005-06-07 Sony Corporation Semiconductor device
US7242038B2 (en) 2004-07-01 2007-07-10 Nippon Telegraph And Telephone Corporation Heterojunction bipolar transistor
JP2016122734A (ja) * 2014-12-25 2016-07-07 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法
WO2022130560A1 (ja) * 2020-12-17 2022-06-23 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784450B2 (en) * 2001-07-20 2004-08-31 Microlink Devices, Inc. Graded base GaAsSb for high speed GaAs HBT
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
FR2878078B1 (fr) * 2004-11-18 2007-01-19 Cit Alcatel Transistor bipolaire et procede de fabrication de ce transistor
US7038256B1 (en) * 2004-12-03 2006-05-02 Northrop Grumman Corp. Low turn-on voltage, non-electron blocking double HBT structure
US8575659B1 (en) * 2011-08-13 2013-11-05 Hrl Laboratories, Llc Carbon-beryllium combinationally doped semiconductor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136368A (ja) * 1987-10-30 1989-05-29 Internatl Business Mach Corp <Ibm> ヘテロ接合バイポーラ・トランジスタ
JPH03108725A (ja) * 1989-09-22 1991-05-08 Nec Corp 半導体結晶
JPH0637104A (ja) * 1992-05-28 1994-02-10 Hughes Aircraft Co 半絶縁性燐化インジュウム基体上に形成されたアンチモン化合物ベースを含むｎｐｎ型ヘテロ接合バイポーラトランジスタ
JPH08335588A (ja) * 1994-11-30 1996-12-17 Rockwell Internatl Corp ＩｎＰベースの半導体
JPH11354451A (ja) * 1998-06-05 1999-12-24 Hitachi Ltd 半導体装置
JP2000306920A (ja) * 1999-04-20 2000-11-02 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタ及びその作製方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US27232A (en) * 1860-02-21 Spring-skate
JP3210383B2 (ja) * 1992-01-22 2001-09-17 株式会社東芝 ヘテロ接合バイポーラトランジスタ
JPH0783032B2 (ja) * 1993-01-28 1995-09-06 日本電気株式会社 ２−６族化合物半導体ｐ形電極構造
US5770868A (en) * 1995-11-08 1998-06-23 Martin Marietta Corporation GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets
DE19640003B4 (de) * 1996-09-27 2005-07-07 Siemens Ag Halbleitervorrichtung und Verfahren zu dessen Herstellung
JP3628873B2 (ja) * 1998-04-28 2005-03-16 富士通株式会社 半導体装置及びその製造方法
JP3658745B2 (ja) * 1998-08-19 2005-06-08 株式会社ルネサステクノロジ バイポーラトランジスタ
US6670653B1 (en) 1999-07-30 2003-12-30 Hrl Laboratories, Llc InP collector InGaAsSb base DHBT device and method of forming same
US6251738B1 (en) * 2000-01-10 2001-06-26 International Business Machines Corporation Process for forming a silicon-germanium base of heterojunction bipolar transistor
US6316795B1 (en) * 2000-04-03 2001-11-13 Hrl Laboratories, Llc Silicon-carbon emitter for silicon-germanium heterojunction bipolar transistors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136368A (ja) * 1987-10-30 1989-05-29 Internatl Business Mach Corp <Ibm> ヘテロ接合バイポーラ・トランジスタ
JPH03108725A (ja) * 1989-09-22 1991-05-08 Nec Corp 半導体結晶
JPH0637104A (ja) * 1992-05-28 1994-02-10 Hughes Aircraft Co 半絶縁性燐化インジュウム基体上に形成されたアンチモン化合物ベースを含むｎｐｎ型ヘテロ接合バイポーラトランジスタ
JPH08335588A (ja) * 1994-11-30 1996-12-17 Rockwell Internatl Corp ＩｎＰベースの半導体
JPH11354451A (ja) * 1998-06-05 1999-12-24 Hitachi Ltd 半導体装置
JP2000306920A (ja) * 1999-04-20 2000-11-02 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタ及びその作製方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903387B2 (en) 2002-12-26 2005-06-07 Sony Corporation Semiconductor device
US7242038B2 (en) 2004-07-01 2007-07-10 Nippon Telegraph And Telephone Corporation Heterojunction bipolar transistor
JP2016122734A (ja) * 2014-12-25 2016-07-07 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法
WO2022130560A1 (ja) * 2020-12-17 2022-06-23 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ

Also Published As

Publication number Publication date
US20020145137A1 (en) 2002-10-10
US20040104403A1 (en) 2004-06-03
US6762480B2 (en) 2004-07-13
EP1237199A3 (en) 2003-01-15
EP1237199A2 (en) 2002-09-04

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