JP2002216483A5 - - Google Patents

Download PDF

Info

Publication number
JP2002216483A5
JP2002216483A5 JP2001010242A JP2001010242A JP2002216483A5 JP 2002216483 A5 JP2002216483 A5 JP 2002216483A5 JP 2001010242 A JP2001010242 A JP 2001010242A JP 2001010242 A JP2001010242 A JP 2001010242A JP 2002216483 A5 JP2002216483 A5 JP 2002216483A5
Authority
JP
Japan
Prior art keywords
data
column
column selection
sense amplifier
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001010242A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002216483A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001010242A priority Critical patent/JP2002216483A/ja
Priority claimed from JP2001010242A external-priority patent/JP2002216483A/ja
Priority to US10/052,303 priority patent/US6552936B2/en
Publication of JP2002216483A publication Critical patent/JP2002216483A/ja
Priority to US10/376,848 priority patent/US6693818B2/en
Priority to US10/654,463 priority patent/US6826068B1/en
Publication of JP2002216483A5 publication Critical patent/JP2002216483A5/ja
Pending legal-status Critical Current

Links

JP2001010242A 2001-01-18 2001-01-18 半導体記憶装置 Pending JP2002216483A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001010242A JP2002216483A (ja) 2001-01-18 2001-01-18 半導体記憶装置
US10/052,303 US6552936B2 (en) 2001-01-18 2002-01-18 Semiconductor storage apparatus
US10/376,848 US6693818B2 (en) 2001-01-18 2003-02-28 Semiconductor storage apparatus
US10/654,463 US6826068B1 (en) 2001-01-18 2003-09-03 Fast data readout semiconductor storage apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001010242A JP2002216483A (ja) 2001-01-18 2001-01-18 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2002216483A JP2002216483A (ja) 2002-08-02
JP2002216483A5 true JP2002216483A5 (https=) 2005-08-25

Family

ID=18877588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001010242A Pending JP2002216483A (ja) 2001-01-18 2001-01-18 半導体記憶装置

Country Status (2)

Country Link
US (2) US6552936B2 (https=)
JP (1) JP2002216483A (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002216483A (ja) * 2001-01-18 2002-08-02 Toshiba Corp 半導体記憶装置
US6826068B1 (en) 2001-01-18 2004-11-30 Kabushiki Kaisha Toshiba Fast data readout semiconductor storage apparatus
JP2004071903A (ja) * 2002-08-07 2004-03-04 Matsushita Electric Ind Co Ltd 半導体装置
JP2004185134A (ja) * 2002-11-29 2004-07-02 Matsushita Electric Ind Co Ltd 記憶装置
JP2004281032A (ja) 2003-02-25 2004-10-07 Rohm Co Ltd 半導体記憶装置
US7418637B2 (en) 2003-08-07 2008-08-26 International Business Machines Corporation Methods and apparatus for testing integrated circuits
JP2005070673A (ja) * 2003-08-27 2005-03-17 Renesas Technology Corp 半導体回路
JP4582551B2 (ja) * 2004-09-30 2010-11-17 スパンション エルエルシー 半導体装置およびデータ書き込み方法
JP4547313B2 (ja) * 2005-08-01 2010-09-22 株式会社日立製作所 半導体記憶装置
JPWO2007023544A1 (ja) * 2005-08-25 2009-03-26 スパンション エルエルシー 記憶装置、記憶装置の制御方法、および記憶制御装置の制御方法
KR100719378B1 (ko) 2006-02-16 2007-05-17 삼성전자주식회사 빠른 랜덤 액세스 기능을 갖는 플래시 메모리 장치 및그것을 포함한 컴퓨팅 시스템
WO2007112202A2 (en) * 2006-03-24 2007-10-04 Sandisk Corporation Non-volatile memory and method with redundancy data buffered in remote buffer circuits
US7339846B2 (en) * 2006-07-14 2008-03-04 Macronix International Co., Ltd. Method and apparatus for reading data from nonvolatile memory
US7817470B2 (en) * 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture
KR100798792B1 (ko) * 2006-12-27 2008-01-28 주식회사 하이닉스반도체 반도체 메모리 장치
KR100903694B1 (ko) * 2007-03-30 2009-06-18 스펜션 엘엘씨 반도체 장치 및 데이터 써넣기 방법
JP5291437B2 (ja) * 2008-11-12 2013-09-18 セイコーインスツル株式会社 半導体記憶装置の読出回路及び半導体記憶装置
JP5266589B2 (ja) * 2009-05-14 2013-08-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR101187639B1 (ko) * 2011-02-28 2012-10-10 에스케이하이닉스 주식회사 집적회로
KR102168076B1 (ko) 2013-12-24 2020-10-20 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
US9536625B1 (en) * 2015-06-22 2017-01-03 Qualcomm Incorporated Circuitry and method for critical path timing speculation in RAMs
KR102491358B1 (ko) * 2016-11-22 2023-01-26 매그나칩 반도체 유한회사 센스 앰프 구동 장치
JP2019040646A (ja) * 2017-08-22 2019-03-14 東芝メモリ株式会社 半導体記憶装置
CN109147851B (zh) * 2018-08-31 2020-12-25 上海华力微电子有限公司 一种锁存电路
KR102949931B1 (ko) * 2020-06-15 2026-04-09 삼성전자주식회사 불휘발성 메모리 장치, 및 그것의 동작 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289413A (en) * 1990-06-08 1994-02-22 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device with high-speed serial-accessing column decoder
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3557022B2 (ja) * 1995-12-08 2004-08-25 株式会社東芝 半導体記憶装置
US6243797B1 (en) * 1997-02-18 2001-06-05 Micron Technlogy, Inc. Multiplexed semiconductor data transfer arrangement with timing signal generator
KR100274591B1 (ko) 1997-07-29 2001-01-15 윤종용 동기형 버스트 매스크 롬 및 그것의 데이터 독출 방법
US6038185A (en) * 1998-05-12 2000-03-14 Atmel Corporation Method and apparatus for a serial access memory
JP2000048586A (ja) 1998-07-30 2000-02-18 Fujitsu Ltd 不揮発性半導体記憶装置
US6240044B1 (en) * 1999-07-29 2001-05-29 Fujitsu Limited High speed address sequencer
JP3940544B2 (ja) * 2000-04-27 2007-07-04 株式会社東芝 不揮発性半導体メモリのベリファイ方法
JP2002216483A (ja) * 2001-01-18 2002-08-02 Toshiba Corp 半導体記憶装置

Similar Documents

Publication Publication Date Title
JP2002216483A5 (https=)
JPH10188588A (ja) パイプライン高速アクセス・フローティング・ゲート・メモリ・アーキテクチャおよび動作方法
KR101036720B1 (ko) 불휘발성 메모리 소자의 동작 방법
JP2006127749A5 (https=)
KR19980078156A (ko) 고속 동작용 싱크로노스 디램
JP2005032426A (ja) 高速データアクセスメモリアレイ
US11367473B2 (en) Wave pipeline
US6490206B2 (en) High-speed synchronous semiconductor memory having multi-stage pipeline structure and operating method
US7180783B2 (en) Non-volatile memory devices that include a programming verification function
US5574695A (en) Semiconductor memory device with bit line load circuit for high speed operation
US10714160B2 (en) Wave pipeline
US7006403B2 (en) Self timed bit and read/write pulse stretchers
JP5319572B2 (ja) メモリ装置
US20100329008A1 (en) Nonvolatile memory device
KR100524944B1 (ko) 고속의 기입 및 독출동작을 가능하게 하는 입출력 구조를갖는 반도체 메모리장치
US6678201B2 (en) Distributed FIFO in synchronous memory
KR100713983B1 (ko) 플래시 메모리 장치의 페이지 버퍼 및 그것을 이용한프로그램 방법
TW200614238A (en) Semiconductor memory device
US7079434B2 (en) Noise suppression in memory device sensing
US7929355B2 (en) Memory device performing write leveling operation
KR20070105141A (ko) 반도체 메모리 장치의 페이지 버퍼
CN100364011C (zh) 源信号线驱动器
US11544208B2 (en) Wave pipeline including synchronous stage
US7212451B2 (en) Column selection signal generator of semiconductor memory device
US7027348B2 (en) Power efficient read circuit for a serial output memory device and method