JP2002198311A - 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 - Google Patents

多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置

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Publication number
JP2002198311A
JP2002198311A JP2000391778A JP2000391778A JP2002198311A JP 2002198311 A JP2002198311 A JP 2002198311A JP 2000391778 A JP2000391778 A JP 2000391778A JP 2000391778 A JP2000391778 A JP 2000391778A JP 2002198311 A JP2002198311 A JP 2002198311A
Authority
JP
Japan
Prior art keywords
film
thin film
hydrogen
semiconductor thin
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000391778A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002198311A5 (enExample
Inventor
Hideo Yamanaka
英雄 山中
Hisayoshi Yamoto
久良 矢元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000391778A priority Critical patent/JP2002198311A/ja
Publication of JP2002198311A publication Critical patent/JP2002198311A/ja
Publication of JP2002198311A5 publication Critical patent/JP2002198311A5/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Liquid Crystal (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000391778A 2000-12-25 2000-12-25 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 Pending JP2002198311A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000391778A JP2002198311A (ja) 2000-12-25 2000-12-25 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000391778A JP2002198311A (ja) 2000-12-25 2000-12-25 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置

Publications (2)

Publication Number Publication Date
JP2002198311A true JP2002198311A (ja) 2002-07-12
JP2002198311A5 JP2002198311A5 (enExample) 2007-05-17

Family

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JP2000391778A Pending JP2002198311A (ja) 2000-12-25 2000-12-25 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置

Country Status (1)

Country Link
JP (1) JP2002198311A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002294451A (ja) * 2001-03-30 2002-10-09 Sony Corp 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置
JP2010056560A (ja) * 2007-08-10 2010-03-11 Mitsubishi Electric Corp カーボン膜成膜装置
US7807495B2 (en) 2007-04-23 2010-10-05 Sanyo Electric Co., Ltd. Method of manufacturing semiconductor film and method of manufacturing photovoltaic element
JP2013033998A (ja) * 2009-09-04 2013-02-14 Semiconductor Energy Lab Co Ltd 発光装置
US8570456B2 (en) 2005-08-12 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device equipped with the semiconductor device
JP2019145806A (ja) * 2008-09-19 2019-08-29 株式会社半導体エネルギー研究所 表示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574713A (ja) * 1991-09-17 1993-03-26 Nippondenso Co Ltd 非晶質半導体薄膜の製造方法
JP2000101088A (ja) * 1998-09-22 2000-04-07 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000243712A (ja) * 1999-02-24 2000-09-08 Sony Corp 成膜方法及びその装置
JP2000269139A (ja) * 1999-03-16 2000-09-29 Sony Corp 多結晶シリコン膜の形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574713A (ja) * 1991-09-17 1993-03-26 Nippondenso Co Ltd 非晶質半導体薄膜の製造方法
JP2000101088A (ja) * 1998-09-22 2000-04-07 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000243712A (ja) * 1999-02-24 2000-09-08 Sony Corp 成膜方法及びその装置
JP2000269139A (ja) * 1999-03-16 2000-09-29 Sony Corp 多結晶シリコン膜の形成方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002294451A (ja) * 2001-03-30 2002-10-09 Sony Corp 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置
US8570456B2 (en) 2005-08-12 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device equipped with the semiconductor device
US7807495B2 (en) 2007-04-23 2010-10-05 Sanyo Electric Co., Ltd. Method of manufacturing semiconductor film and method of manufacturing photovoltaic element
JP2010056560A (ja) * 2007-08-10 2010-03-11 Mitsubishi Electric Corp カーボン膜成膜装置
JP2019145806A (ja) * 2008-09-19 2019-08-29 株式会社半導体エネルギー研究所 表示装置
US10559599B2 (en) 2008-09-19 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI714063B (zh) * 2008-09-19 2020-12-21 日商半導體能源研究所股份有限公司 顯示裝置
US11610918B2 (en) 2008-09-19 2023-03-21 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2013033998A (ja) * 2009-09-04 2013-02-14 Semiconductor Energy Lab Co Ltd 発光装置
US8890166B2 (en) 2009-09-04 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same

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