JP2002185085A - 窒化物系半導体レーザ素子及びチップ分割方法 - Google Patents

窒化物系半導体レーザ素子及びチップ分割方法

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Publication number
JP2002185085A
JP2002185085A JP2000376846A JP2000376846A JP2002185085A JP 2002185085 A JP2002185085 A JP 2002185085A JP 2000376846 A JP2000376846 A JP 2000376846A JP 2000376846 A JP2000376846 A JP 2000376846A JP 2002185085 A JP2002185085 A JP 2002185085A
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Japan
Prior art keywords
substrate
wafer
gan
chip
epi
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Pending
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JP2000376846A
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English (en)
Japanese (ja)
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JP2002185085A5 (https=
Inventor
Takeshi Kamikawa
剛 神川
Shigetoshi Ito
茂稔 伊藤
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Sharp Corp
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Sharp Corp
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Priority to JP2000376846A priority Critical patent/JP2002185085A/ja
Publication of JP2002185085A publication Critical patent/JP2002185085A/ja
Publication of JP2002185085A5 publication Critical patent/JP2002185085A5/ja
Pending legal-status Critical Current

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JP2000376846A 2000-12-12 2000-12-12 窒化物系半導体レーザ素子及びチップ分割方法 Pending JP2002185085A (ja)

Priority Applications (1)

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JP2000376846A JP2002185085A (ja) 2000-12-12 2000-12-12 窒化物系半導体レーザ素子及びチップ分割方法

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JP2000376846A JP2002185085A (ja) 2000-12-12 2000-12-12 窒化物系半導体レーザ素子及びチップ分割方法

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JP2002185085A true JP2002185085A (ja) 2002-06-28
JP2002185085A5 JP2002185085A5 (https=) 2004-12-16

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004051759A1 (ja) * 2002-12-03 2004-06-17 Nec Corporation 量子井戸構造を有する半導体光素子およびその製造方法
US7183585B2 (en) 2003-10-29 2007-02-27 Nec Corporation Semiconductor device and a method for the manufacture thereof
JP2007335667A (ja) * 2006-06-15 2007-12-27 Toyoda Gosei Co Ltd 窒化物半導体ウエハの分割方法
JP2009027018A (ja) * 2007-07-20 2009-02-05 Sharp Corp 窒化物半導体レーザ素子およびその製造方法
JP2013505586A (ja) * 2009-09-17 2013-02-14 ソラア インコーポレーテッド ｛２０−２１｝ガリウム及び窒素含有基板上の低電圧レーザダイオード
JP2013093619A (ja) * 2013-02-05 2013-05-16 Sharp Corp 窒化物半導体ウェハ
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9076926B2 (en) 2011-08-22 2015-07-07 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9105806B2 (en) 2009-03-09 2015-08-11 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10283938B1 (en) 2010-11-05 2019-05-07 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7479448B2 (en) 2002-12-03 2009-01-20 Nec Corporation Method of manufacturing a light emitting device with a doped active layer
WO2004051759A1 (ja) * 2002-12-03 2004-06-17 Nec Corporation 量子井戸構造を有する半導体光素子およびその製造方法
US7183585B2 (en) 2003-10-29 2007-02-27 Nec Corporation Semiconductor device and a method for the manufacture thereof
JP2007335667A (ja) * 2006-06-15 2007-12-27 Toyoda Gosei Co Ltd 窒化物半導体ウエハの分割方法
JP2009027018A (ja) * 2007-07-20 2009-02-05 Sharp Corp 窒化物半導体レーザ素子およびその製造方法
US9105806B2 (en) 2009-03-09 2015-08-11 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US12327984B2 (en) 2009-09-17 2025-06-10 Kyocera Sld Laser, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
US11070031B2 (en) 2009-09-17 2021-07-20 Kyocera Sld Laser, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
US10424900B2 (en) 2009-09-17 2019-09-24 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US10090644B2 (en) 2009-09-17 2018-10-02 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US9543738B2 (en) 2009-09-17 2017-01-10 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
US9853420B2 (en) 2009-09-17 2017-12-26 Soraa Laser Diode, Inc. Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
JP2013505586A (ja) * 2009-09-17 2013-02-14 ソラア インコーポレーテッド ｛２０−２１｝ガリウム及び窒素含有基板上の低電圧レーザダイオード
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US10693041B2 (en) 2009-09-18 2020-06-23 Soraa, Inc. High-performance LED fabrication
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US12369438B2 (en) 2010-02-03 2025-07-22 Korrus, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US11715931B1 (en) 2010-11-05 2023-08-01 Kyocera Sld Laser, Inc. Strained and strain control regions in optical devices
US10283938B1 (en) 2010-11-05 2019-05-07 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US11152765B1 (en) 2010-11-05 2021-10-19 Kyocera Sld Laser, Inc. Strained and strain control regions in optical devices
US10637210B1 (en) 2010-11-05 2020-04-28 Soraa Laser Diode, Inc. Strained and strain control regions in optical devices
US9786810B2 (en) 2010-11-09 2017-10-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9076926B2 (en) 2011-08-22 2015-07-07 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
JP2013093619A (ja) * 2013-02-05 2013-05-16 Sharp Corp 窒化物半導体ウェハ
US10529902B2 (en) 2013-11-04 2020-01-07 Soraa, Inc. Small LED source with high brightness and high efficiency
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency

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