JP2002185085A5 - - Google Patents
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- Publication number
- JP2002185085A5 JP2002185085A5 JP2000376846A JP2000376846A JP2002185085A5 JP 2002185085 A5 JP2002185085 A5 JP 2002185085A5 JP 2000376846 A JP2000376846 A JP 2000376846A JP 2000376846 A JP2000376846 A JP 2000376846A JP 2002185085 A5 JP2002185085 A5 JP 2002185085A5
- Authority
- JP
- Japan
- Prior art keywords
- based semiconductor
- semiconductor substrate
- gallium nitride
- substrate
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 29
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 3
- 238000006748 scratching Methods 0.000 claims description 3
- 230000002393 scratching effect Effects 0.000 claims description 3
- 231100000241 scar Toxicity 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000376846A JP2002185085A (ja) | 2000-12-12 | 2000-12-12 | 窒化物系半導体レーザ素子及びチップ分割方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000376846A JP2002185085A (ja) | 2000-12-12 | 2000-12-12 | 窒化物系半導体レーザ素子及びチップ分割方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002185085A JP2002185085A (ja) | 2002-06-28 |
| JP2002185085A5 true JP2002185085A5 (https=) | 2004-12-16 |
Family
ID=18845655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000376846A Pending JP2002185085A (ja) | 2000-12-12 | 2000-12-12 | 窒化物系半導体レーザ素子及びチップ分割方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002185085A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004051759A1 (ja) * | 2002-12-03 | 2004-06-17 | Nec Corporation | 量子井戸構造を有する半導体光素子およびその製造方法 |
| JP4539077B2 (ja) | 2003-10-29 | 2010-09-08 | 日本電気株式会社 | 半導体素子の製造方法 |
| JP4910492B2 (ja) * | 2006-06-15 | 2012-04-04 | 豊田合成株式会社 | 窒化物半導体ウエハの分割方法 |
| JP4979011B2 (ja) * | 2007-07-20 | 2012-07-18 | シャープ株式会社 | 窒化物半導体レーザ素子およびその製造方法 |
| US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
| US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
| US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
| US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
| US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
| US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
| JP5624166B2 (ja) * | 2013-02-05 | 2014-11-12 | シャープ株式会社 | 窒化物半導体ウェハ |
| US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
-
2000
- 2000-12-12 JP JP2000376846A patent/JP2002185085A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
| US9379522B1 (en) | 2010-11-05 | 2016-06-28 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
| US9570888B1 (en) | 2010-11-05 | 2017-02-14 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
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