JP2002110544A - レーザアニールによる薄膜結晶成長 - Google Patents

レーザアニールによる薄膜結晶成長

Info

Publication number
JP2002110544A
JP2002110544A JP2001241661A JP2001241661A JP2002110544A JP 2002110544 A JP2002110544 A JP 2002110544A JP 2001241661 A JP2001241661 A JP 2001241661A JP 2001241661 A JP2001241661 A JP 2001241661A JP 2002110544 A JP2002110544 A JP 2002110544A
Authority
JP
Japan
Prior art keywords
time
energy
energy beam
laser
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001241661A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002110544A5 (enExample
Inventor
P Grigoropoulos Costas
ピー、グリゴロポウロス コスタス
Mutsuko Hatano
睦子 波多野
Lee Min-Hon
− ホン リー ミン
Jae Muun Seun
− ジャエ ムーン セウン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
University of California
University of California Berkeley
Original Assignee
Hitachi Ltd
University of California
University of California Berkeley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, University of California, University of California Berkeley filed Critical Hitachi Ltd
Publication of JP2002110544A publication Critical patent/JP2002110544A/ja
Publication of JP2002110544A5 publication Critical patent/JP2002110544A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2001241661A 2000-08-10 2001-08-09 レーザアニールによる薄膜結晶成長 Pending JP2002110544A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US637325 2000-08-10
US09/637,325 US6451631B1 (en) 2000-08-10 2000-08-10 Thin film crystal growth by laser annealing

Publications (2)

Publication Number Publication Date
JP2002110544A true JP2002110544A (ja) 2002-04-12
JP2002110544A5 JP2002110544A5 (enExample) 2008-03-06

Family

ID=24555457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001241661A Pending JP2002110544A (ja) 2000-08-10 2001-08-09 レーザアニールによる薄膜結晶成長

Country Status (4)

Country Link
US (2) US6451631B1 (enExample)
JP (1) JP2002110544A (enExample)
KR (1) KR100844242B1 (enExample)
TW (1) TW548748B (enExample)

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WO2003015117A1 (en) * 2001-08-11 2003-02-20 The University Court Of The University Of Dundee Field emission backplate
JP2004172569A (ja) * 2002-11-19 2004-06-17 Samsung Sdi Co Ltd 均一性に優れた薄膜トランジスタ及びこれを用いる有機電界発光素子
JP2012064954A (ja) * 2004-01-06 2012-03-29 Samsung Electronics Co Ltd 結晶化用光マスク及びこれを利用した薄膜トランジスタ表示板の製造方法
US8314428B2 (en) 2002-12-16 2012-11-20 Samsung Display Co., Ltd. Thin film transistor with LDD/offset structure
JP2015015471A (ja) * 2013-07-04 2015-01-22 上海和輝光電有限公司Ｅｖｅｒｄｉｓｐｌａｙ Ｏｐｔｒｏｎｉｃｓ （Ｓｈａｎｇｈａｉ） Ｌｉｍｉｔｅｄ 多結晶シリコン製造方法
CN107004604A (zh) * 2014-11-25 2017-08-01 株式会社V技术 薄膜晶体管、薄膜晶体管的制造方法以及激光退火装置

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US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
WO2002031869A2 (en) 2000-10-10 2002-04-18 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
KR100672628B1 (ko) * 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
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US6645454B2 (en) * 2001-06-28 2003-11-11 Sharp Laboratories Of America, Inc. System and method for regulating lateral growth in laser irradiated silicon films
JP2003059858A (ja) * 2001-08-09 2003-02-28 Sony Corp レーザアニール装置及び薄膜トランジスタの製造方法
US6847006B2 (en) * 2001-08-10 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Laser annealing apparatus and semiconductor device manufacturing method
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US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
KR100493156B1 (ko) * 2002-06-05 2005-06-03 삼성전자주식회사 나노입자를 이용한 비정질 실리콘의 결정화 방법
KR101131040B1 (ko) 2002-08-19 2012-03-30 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에지 영역을 최소화하도록 기판 상의 박막 영역을 레이저결정화 처리하는 방법 및 시스템, 그리고 그러한 박막 영역의 구조
KR20050047103A (ko) 2002-08-19 2005-05-19 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 다양한 조사 패턴을 포함하는 원 샷 반도체 가공 시스템 및방법
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7332431B2 (en) * 2002-10-17 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2004207616A (ja) * 2002-12-26 2004-07-22 Hitachi Displays Ltd 表示装置
KR101191837B1 (ko) 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
EP1468774B1 (en) * 2003-02-28 2009-04-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2004266022A (ja) * 2003-02-28 2004-09-24 Sharp Corp 半導体薄膜の結晶成長装置および結晶成長方法
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
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WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
KR100971951B1 (ko) * 2003-09-17 2010-07-23 엘지디스플레이 주식회사 엑시머 레이저를 이용한 비정질 실리콘 박막 결정화 방법
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
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KR101041066B1 (ko) * 2004-02-13 2011-06-13 삼성전자주식회사 실리콘 결정화 방법, 이를 이용한 실리콘 결정화 장치,이를 이용한 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 이용한 표시장치
KR100603330B1 (ko) * 2004-02-16 2006-07-20 삼성에스디아이 주식회사 레이저 결정화 장치
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