JP2002043458A - 集積回路パッケージの製造方法 - Google Patents

集積回路パッケージの製造方法

Info

Publication number
JP2002043458A
JP2002043458A JP2001218961A JP2001218961A JP2002043458A JP 2002043458 A JP2002043458 A JP 2002043458A JP 2001218961 A JP2001218961 A JP 2001218961A JP 2001218961 A JP2001218961 A JP 2001218961A JP 2002043458 A JP2002043458 A JP 2002043458A
Authority
JP
Japan
Prior art keywords
integrated circuit
conductive layer
substrate
providing
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001218961A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002043458A5 (https=
Inventor
Cohn Charles
コーン チャールズ
R Hawk Donald Jr
アール ホーク，ジュニヤ ドナルド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of JP2002043458A publication Critical patent/JP2002043458A/ja
Publication of JP2002043458A5 publication Critical patent/JP2002043458A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)
JP2001218961A 2000-07-21 2001-07-19 集積回路パッケージの製造方法 Pending JP2002043458A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/621,110 US6790760B1 (en) 2000-07-21 2000-07-21 Method of manufacturing an integrated circuit package
US09/621110 2000-07-21

Publications (2)

Publication Number Publication Date
JP2002043458A true JP2002043458A (ja) 2002-02-08
JP2002043458A5 JP2002043458A5 (https=) 2004-09-09

Family

ID=24488766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001218961A Pending JP2002043458A (ja) 2000-07-21 2001-07-19 集積回路パッケージの製造方法

Country Status (5)

Country Link
US (1) US6790760B1 (https=)
JP (1) JP2002043458A (https=)
KR (1) KR100803643B1 (https=)
GB (1) GB2370414B (https=)
TW (1) TW546767B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100803643B1 (ko) * 2000-07-21 2008-02-19 에이저 시스템즈 가디언 코포레이션 집적 회로 패키지의 제조 방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770963B1 (en) * 2001-01-04 2004-08-03 Broadcom Corporation Multi-power ring chip scale package for system level integration
US7423340B2 (en) * 2003-01-21 2008-09-09 Siliconware Precision Industries Co., Ltd. Semiconductor package free of substrate and fabrication method thereof
TWI241000B (en) * 2003-01-21 2005-10-01 Siliconware Precision Industries Co Ltd Semiconductor package and fabricating method thereof
US20040145874A1 (en) * 2003-01-23 2004-07-29 Stephane Pinel Method, system, and apparatus for embedding circuits
US7183786B2 (en) * 2003-03-04 2007-02-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Modifying a semiconductor device to provide electrical parameter monitoring
US20040183167A1 (en) * 2003-03-21 2004-09-23 Texas Instruments Incorporated Recessed-bond semiconductor package substrate
US7219242B2 (en) * 2003-03-31 2007-05-15 Intel Corporation Direct plane access power delivery
US6956286B2 (en) * 2003-08-05 2005-10-18 International Business Machines Corporation Integrated circuit package with overlapping bond fingers
JP4703300B2 (ja) * 2005-07-20 2011-06-15 富士通セミコンダクター株式会社 中継基板及び当該中継基板を備えた半導体装置
JP4474431B2 (ja) * 2007-03-26 2010-06-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体パッケージおよび該製造方法
US8415785B1 (en) 2010-01-27 2013-04-09 Marvell International Ltd. Metal ring techniques and configurations
US9204561B2 (en) * 2012-04-17 2015-12-01 Advanced Flexible Circuits Co., Ltd. Method of manufacturing a structure of via hole of electrical circuit board
US9814142B1 (en) * 2015-06-24 2017-11-07 Automated Assembly Corporation Electronic devices wire bonded to substrate through an adhesive layer and method of making the same
CN111443440B (zh) * 2020-05-09 2025-03-04 菲尼萨光电通讯(上海)有限公司 光器件结构及其制作方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320438A (en) 1980-05-15 1982-03-16 Cts Corporation Multi-layer ceramic package
US5063175A (en) * 1986-09-30 1991-11-05 North American Philips Corp., Signetics Division Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material
US5008734A (en) * 1989-12-20 1991-04-16 National Semiconductor Corporation Stadium-stepped package for an integrated circuit with air dielectric
JPH06342853A (ja) * 1993-04-06 1994-12-13 Tokuyama Soda Co Ltd 半導体素子用パッケージ
WO1994023448A1 (fr) * 1993-04-06 1994-10-13 Tokuyama Corporation Boitier pour puce de semiconducteur
US5490324A (en) 1993-09-15 1996-02-13 Lsi Logic Corporation Method of making integrated circuit package having multiple bonding tiers
JP2931741B2 (ja) 1993-09-24 1999-08-09 株式会社東芝 半導体装置
JP3094069B2 (ja) * 1993-12-24 2000-10-03 日本特殊陶業株式会社 セラミックパッケージ本体の製造方法
EP1213754A3 (en) * 1994-03-18 2005-05-25 Hitachi Chemical Co., Ltd. Fabrication process of semiconductor package and semiconductor package
JPH07288385A (ja) 1994-04-19 1995-10-31 Hitachi Chem Co Ltd 多層配線板及びその製造法
US5622588A (en) 1995-02-02 1997-04-22 Hestia Technologies, Inc. Methods of making multi-tier laminate substrates for electronic device packaging
FR2736206B1 (fr) * 1995-06-30 1997-08-08 Commissariat Energie Atomique Procede de realisation d'un substrat d'interconnexion permettant de connecter une puce sur un substrat de reception
JP3292798B2 (ja) * 1995-10-04 2002-06-17 三菱電機株式会社 半導体装置
US6060378A (en) * 1995-11-03 2000-05-09 Micron Technology, Inc. Semiconductor bonding pad for better reliability
US5796170A (en) * 1996-02-15 1998-08-18 Northern Telecom Limited Ball grid array (BGA) integrated circuit packages
US5729047A (en) * 1996-03-25 1998-03-17 Micron Technology, Inc. Method and structure for providing signal isolation and decoupling in an integrated circuit device
US6043559A (en) * 1996-09-09 2000-03-28 Intel Corporation Integrated circuit package which contains two in plane voltage busses and a wrap around conductive strip that connects a bond finger to one of the busses
US5689091A (en) * 1996-09-19 1997-11-18 Vlsi Technology, Inc. Multi-layer substrate structure
US5854512A (en) * 1996-09-20 1998-12-29 Vlsi Technology, Inc. High density leaded ball-grid array package
JPH10163635A (ja) * 1996-11-28 1998-06-19 Sony Corp プリント配線板
US6054758A (en) 1996-12-18 2000-04-25 Texas Instruments Incorporated Differential pair geometry for integrated circuit chip packages
JPH1174651A (ja) 1997-03-13 1999-03-16 Ibiden Co Ltd プリント配線板及びその製造方法
JPH11176976A (ja) * 1997-12-08 1999-07-02 Sumitomo Metal Smi Electron Devices Inc 電子部品用パッケージの製造方法
US6140707A (en) * 1998-05-07 2000-10-31 3M Innovative Properties Co. Laminated integrated circuit package
JPH11354566A (ja) * 1998-06-08 1999-12-24 Hitachi Ltd 半導体装置およびその製造方法
JP3420703B2 (ja) * 1998-07-16 2003-06-30 株式会社東芝 半導体装置の製造方法
US6027999A (en) * 1998-09-10 2000-02-22 Chartered Semiconductor Manufacturing, Ltd. Pad definition to achieve highly reflective plate without affecting bondability
TW399309B (en) * 1998-09-30 2000-07-21 World Wiser Electronics Inc Cavity-down package structure with thermal via
US6329228B1 (en) * 1999-04-28 2001-12-11 Citizen Watch Co., Ltd. Semiconductor device and method of fabricating the same
TW439147B (en) * 1999-12-20 2001-06-07 United Microelectronics Corp Manufacturing method to form air gap using hardmask to improve isolation effect
US6790760B1 (en) * 2000-07-21 2004-09-14 Agere Systems Inc. Method of manufacturing an integrated circuit package
US6465882B1 (en) * 2000-07-21 2002-10-15 Agere Systems Guardian Corp. Integrated circuit package having partially exposed conductive layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100803643B1 (ko) * 2000-07-21 2008-02-19 에이저 시스템즈 가디언 코포레이션 집적 회로 패키지의 제조 방법

Also Published As

Publication number Publication date
GB2370414B (en) 2004-10-20
US6790760B1 (en) 2004-09-14
GB2370414A (en) 2002-06-26
KR20020009445A (ko) 2002-02-01
TW546767B (en) 2003-08-11
KR100803643B1 (ko) 2008-02-19
GB0117316D0 (en) 2001-09-05

Similar Documents

Publication Publication Date Title
JP5135493B2 (ja) 集積回路パッケージ
US8110909B1 (en) Semiconductor package including top-surface terminals for mounting another semiconductor package
JP3123638B2 (ja) 半導体装置
US7915726B2 (en) Interconnecting substrates for microelectronic dies, methods for forming vias in such substrates, and methods for packaging microelectronic devices
WO2005031805A2 (en) Multi-surface ic packaging structures and methods for their manufacture
TW201703210A (zh) 半導體封裝及其製造方法
JP2002043458A (ja) 集積回路パッケージの製造方法
US12027485B2 (en) Semiconductor device assembly and method therefor
US6250606B1 (en) Substrate for semiconductor device, semiconductor device and manufacturing method thereof
JP3899059B2 (ja) 低抵抗高密度信号線をする電子パッケージおよびその製造方法
KR100826989B1 (ko) 반도체 패키지 및 그의 제조방법
CN201594536U (zh) 芯片堆栈电路结构
JP2803656B2 (ja) 半導体装置
CN215220719U (zh) 一种双面封装结构
JP2021019081A (ja) 半導体パッケージ
JPH11163217A (ja) 半導体装置
KR102929114B1 (ko) 반도체 패키지 및 벤트홀을 포함한 패키지 기판
US7176573B2 (en) Semiconductor device with a multi-level interconnect structure and method for making the same
JP3491606B2 (ja) 半導体デバイスとその製造方法
JPH08330472A (ja) 半導体装置とその製造方法
JP4819398B2 (ja) 電子モジュール
CN120021012A (zh) 包括散热构件的半导体封装及其制造方法
KR19980044592A (ko) 반도체 패키지의 구조

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050829

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20051129

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20051202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060228

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20061004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070129

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20070327

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20070727