JP2002026153A - 半導体メモリ - Google Patents

半導体メモリ

Info

Publication number
JP2002026153A
JP2002026153A JP2000208341A JP2000208341A JP2002026153A JP 2002026153 A JP2002026153 A JP 2002026153A JP 2000208341 A JP2000208341 A JP 2000208341A JP 2000208341 A JP2000208341 A JP 2000208341A JP 2002026153 A JP2002026153 A JP 2002026153A
Authority
JP
Japan
Prior art keywords
select gate
charge storage
gsl
ssl
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000208341A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002026153A5 (enrdf_load_stackoverflow
Inventor
Mitsuhiro Noguchi
充宏 野口
Yasushi Sakui
康司 作井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000208341A priority Critical patent/JP2002026153A/ja
Priority to US09/615,803 priority patent/US6411548B1/en
Priority to KR10-2000-0040174A priority patent/KR100391404B1/ko
Priority to TW089113982A priority patent/TW475267B/zh
Publication of JP2002026153A publication Critical patent/JP2002026153A/ja
Publication of JP2002026153A5 publication Critical patent/JP2002026153A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2000208341A 1999-07-13 2000-07-10 半導体メモリ Pending JP2002026153A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000208341A JP2002026153A (ja) 2000-07-10 2000-07-10 半導体メモリ
US09/615,803 US6411548B1 (en) 1999-07-13 2000-07-13 Semiconductor memory having transistors connected in series
KR10-2000-0040174A KR100391404B1 (ko) 1999-07-13 2000-07-13 반도체 메모리
TW089113982A TW475267B (en) 1999-07-13 2000-07-13 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000208341A JP2002026153A (ja) 2000-07-10 2000-07-10 半導体メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008217927A Division JP2008311679A (ja) 2008-08-27 2008-08-27 半導体メモリの閾値設定方法

Publications (2)

Publication Number Publication Date
JP2002026153A true JP2002026153A (ja) 2002-01-25
JP2002026153A5 JP2002026153A5 (enrdf_load_stackoverflow) 2005-07-07

Family

ID=18704936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000208341A Pending JP2002026153A (ja) 1999-07-13 2000-07-10 半導体メモリ

Country Status (1)

Country Link
JP (1) JP2002026153A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324860A (ja) * 2001-03-17 2002-11-08 Samsung Electronics Co Ltd モノスゲート構造を有する不揮発性メモリ素子及びその製造方法
JP2003060096A (ja) * 2001-06-28 2003-02-28 Samsung Electronics Co Ltd 不揮発性メモリ素子及びその製造方法
JP2004221589A (ja) * 2003-01-10 2004-08-05 Samsung Electronics Co Ltd 電荷貯蔵絶縁膜を有する不揮発性メモリ素子及びその製造方法
US6850439B1 (en) * 2003-10-10 2005-02-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with NAND string memory transistor controlled as block separation transistor
JP2005136416A (ja) * 2003-10-28 2005-05-26 Samsung Electronics Co Ltd 不揮発性記憶素子およびその形成方法
US6903422B2 (en) 2002-07-03 2005-06-07 Kabushiki Kaisha Toshiba Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems
JP2005317965A (ja) * 2004-04-26 2005-11-10 Micronics Internatl Co Ltd 電荷捕獲型不揮発性メモリのための電荷平衡消去による動作スキーム
KR100801391B1 (ko) 2006-01-23 2008-02-05 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치
JP2008211162A (ja) * 2007-02-01 2008-09-11 Renesas Technology Corp 半導体記憶装置およびその製造方法
US7630261B2 (en) 2004-02-17 2009-12-08 Kabushiki Kaisha Toshiba Nand-structured flash memory
JP2010118580A (ja) * 2008-11-14 2010-05-27 Toshiba Corp 不揮発性半導体記憶装置
JP2011029576A (ja) * 2009-06-23 2011-02-10 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878551A (ja) * 1993-12-27 1996-03-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JPH08316226A (ja) * 1995-05-17 1996-11-29 Sony Corp 素子分離領域の形成方法及び半導体装置の製造方法
JPH0974146A (ja) * 1995-09-04 1997-03-18 Sony Corp 不揮発性半導体記憶装置
JPH10256399A (ja) * 1997-03-07 1998-09-25 Sony Corp 半導体記憶装置及びその製造方法
JPH11224940A (ja) * 1997-12-05 1999-08-17 Sony Corp 不揮発性半導体記憶装置及びその書き込み方法
JP2000076878A (ja) * 1998-08-25 2000-03-14 Toshiba Corp 不揮発性半導体記憶装置
JP2000163982A (ja) * 1992-07-06 2000-06-16 Hitachi Ltd 不揮発性半導体記憶装置
JP2000188384A (ja) * 1998-12-22 2000-07-04 Toshiba Corp 不揮発性半導体記憶装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000163982A (ja) * 1992-07-06 2000-06-16 Hitachi Ltd 不揮発性半導体記憶装置
JPH0878551A (ja) * 1993-12-27 1996-03-22 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JPH08316226A (ja) * 1995-05-17 1996-11-29 Sony Corp 素子分離領域の形成方法及び半導体装置の製造方法
JPH0974146A (ja) * 1995-09-04 1997-03-18 Sony Corp 不揮発性半導体記憶装置
JPH10256399A (ja) * 1997-03-07 1998-09-25 Sony Corp 半導体記憶装置及びその製造方法
JPH11224940A (ja) * 1997-12-05 1999-08-17 Sony Corp 不揮発性半導体記憶装置及びその書き込み方法
JP2000076878A (ja) * 1998-08-25 2000-03-14 Toshiba Corp 不揮発性半導体記憶装置
JP2000188384A (ja) * 1998-12-22 2000-07-04 Toshiba Corp 不揮発性半導体記憶装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324860A (ja) * 2001-03-17 2002-11-08 Samsung Electronics Co Ltd モノスゲート構造を有する不揮発性メモリ素子及びその製造方法
JP2003060096A (ja) * 2001-06-28 2003-02-28 Samsung Electronics Co Ltd 不揮発性メモリ素子及びその製造方法
US6903422B2 (en) 2002-07-03 2005-06-07 Kabushiki Kaisha Toshiba Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems
JP2004221589A (ja) * 2003-01-10 2004-08-05 Samsung Electronics Co Ltd 電荷貯蔵絶縁膜を有する不揮発性メモリ素子及びその製造方法
US6850439B1 (en) * 2003-10-10 2005-02-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with NAND string memory transistor controlled as block separation transistor
JP2005136416A (ja) * 2003-10-28 2005-05-26 Samsung Electronics Co Ltd 不揮発性記憶素子およびその形成方法
US7630261B2 (en) 2004-02-17 2009-12-08 Kabushiki Kaisha Toshiba Nand-structured flash memory
JP2005317965A (ja) * 2004-04-26 2005-11-10 Micronics Internatl Co Ltd 電荷捕獲型不揮発性メモリのための電荷平衡消去による動作スキーム
KR100801391B1 (ko) 2006-01-23 2008-02-05 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치
JP2008211162A (ja) * 2007-02-01 2008-09-11 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2010118580A (ja) * 2008-11-14 2010-05-27 Toshiba Corp 不揮発性半導体記憶装置
JP2011029576A (ja) * 2009-06-23 2011-02-10 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US8598649B2 (en) 2009-06-23 2013-12-03 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacturing same

Similar Documents

Publication Publication Date Title
KR100391404B1 (ko) 반도체 메모리
JP4822841B2 (ja) 半導体記憶装置及びその製造方法
JP3317459B2 (ja) 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
KR100604960B1 (ko) 불휘발성 반도체 기억장치 및 그 제조방법 및 반도체 장치 및 그 제조방법
JP4282248B2 (ja) 半導体記憶装置
JP3829088B2 (ja) 半導体記憶装置
JP3450467B2 (ja) 不揮発性半導体記憶装置及びその製造方法
JP4102112B2 (ja) 半導体装置及びその製造方法
US7643346B2 (en) NAND type nonvolatile semiconductor memory device having sideface electrode shared by memory cells
US7471563B2 (en) Semiconductor memory device
JPH11163303A (ja) 不揮発性半導体記憶装置
JP2002026153A (ja) 半導体メモリ
JP2825407B2 (ja) 不揮発性半導体記憶装置
JP4065671B2 (ja) 不揮発性半導体記憶装置、その製造方法及びその動作方法
TW202114167A (zh) 記憶體裝置
JP3107442B2 (ja) 不揮発性メモリ、その使用方法及びその製造方法
JP4810330B2 (ja) 半導体記憶装置
JP2003188287A (ja) 不揮発性半導体記憶装置及びその製造方法
JP3251699B2 (ja) 不揮発性記憶装置
JP2008311679A (ja) 半導体メモリの閾値設定方法
JP3405567B2 (ja) 不揮発性半導体記憶装置
JP4970402B2 (ja) 半導体記憶装置
JP3469606B2 (ja) 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
JP2006114925A (ja) 半導体装置の製造方法および半導体装置
JP3426641B2 (ja) 不揮発性記憶素子およびこれを利用した不揮発性記憶装置ならびにこの記憶装置の駆動方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041101

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041101

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080430

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080827

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20080911

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20081114