JP2002026153A5 - - Google Patents

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Publication number
JP2002026153A5
JP2002026153A5 JP2000208341A JP2000208341A JP2002026153A5 JP 2002026153 A5 JP2002026153 A5 JP 2002026153A5 JP 2000208341 A JP2000208341 A JP 2000208341A JP 2000208341 A JP2000208341 A JP 2000208341A JP 2002026153 A5 JP2002026153 A5 JP 2002026153A5
Authority
JP
Japan
Prior art keywords
switching element
charge storage
storage layer
semiconductor memory
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000208341A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002026153A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000208341A priority Critical patent/JP2002026153A/ja
Priority claimed from JP2000208341A external-priority patent/JP2002026153A/ja
Priority to US09/615,803 priority patent/US6411548B1/en
Priority to KR10-2000-0040174A priority patent/KR100391404B1/ko
Priority to TW089113982A priority patent/TW475267B/zh
Publication of JP2002026153A publication Critical patent/JP2002026153A/ja
Publication of JP2002026153A5 publication Critical patent/JP2002026153A5/ja
Pending legal-status Critical Current

Links

JP2000208341A 1999-07-13 2000-07-10 半導体メモリ Pending JP2002026153A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000208341A JP2002026153A (ja) 2000-07-10 2000-07-10 半導体メモリ
US09/615,803 US6411548B1 (en) 1999-07-13 2000-07-13 Semiconductor memory having transistors connected in series
KR10-2000-0040174A KR100391404B1 (ko) 1999-07-13 2000-07-13 반도체 메모리
TW089113982A TW475267B (en) 1999-07-13 2000-07-13 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000208341A JP2002026153A (ja) 2000-07-10 2000-07-10 半導体メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008217927A Division JP2008311679A (ja) 2008-08-27 2008-08-27 半導体メモリの閾値設定方法

Publications (2)

Publication Number Publication Date
JP2002026153A JP2002026153A (ja) 2002-01-25
JP2002026153A5 true JP2002026153A5 (enrdf_load_stackoverflow) 2005-07-07

Family

ID=18704936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000208341A Pending JP2002026153A (ja) 1999-07-13 2000-07-10 半導体メモリ

Country Status (1)

Country Link
JP (1) JP2002026153A (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100414211B1 (ko) * 2001-03-17 2004-01-07 삼성전자주식회사 모노스 게이트 구조를 갖는 비휘발성 메모리소자 및 그제조방법
KR100395755B1 (ko) * 2001-06-28 2003-08-21 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
JP2004039866A (ja) 2002-07-03 2004-02-05 Toshiba Corp 半導体装置及びその製造方法
KR100504691B1 (ko) * 2003-01-10 2005-08-03 삼성전자주식회사 전하저장절연막을 가지는 비휘발성 메모리 소자 및 그제조방법
JP2005116119A (ja) * 2003-10-10 2005-04-28 Toshiba Corp 不揮発性半導体記憶装置
KR100578131B1 (ko) * 2003-10-28 2006-05-10 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
JP4398750B2 (ja) 2004-02-17 2010-01-13 株式会社東芝 Ｎａｎｄ型フラッシュメモリ
US7075828B2 (en) * 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
JP4802040B2 (ja) 2006-01-23 2011-10-26 株式会社東芝 不揮発性半導体記憶装置
JP5161494B2 (ja) * 2007-02-01 2013-03-13 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2010118580A (ja) * 2008-11-14 2010-05-27 Toshiba Corp 不揮発性半導体記憶装置
JP2011029576A (ja) 2009-06-23 2011-02-10 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100279782B1 (ko) * 1992-07-06 2001-02-01 가나이 쓰도무 불휘발성 반도체기억장치
JP3450467B2 (ja) * 1993-12-27 2003-09-22 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JPH08316226A (ja) * 1995-05-17 1996-11-29 Sony Corp 素子分離領域の形成方法及び半導体装置の製造方法
JPH0974146A (ja) * 1995-09-04 1997-03-18 Sony Corp 不揮発性半導体記憶装置
JP3991383B2 (ja) * 1997-03-07 2007-10-17 ソニー株式会社 半導体記憶装置及びその製造方法
JPH11224940A (ja) * 1997-12-05 1999-08-17 Sony Corp 不揮発性半導体記憶装置及びその書き込み方法
JP3595691B2 (ja) * 1998-08-25 2004-12-02 株式会社東芝 不揮発性半導体記憶装置
JP3540640B2 (ja) * 1998-12-22 2004-07-07 株式会社東芝 不揮発性半導体記憶装置

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