JP2001527160A - 遷移金属含有層をエッチングするための技術 - Google Patents

遷移金属含有層をエッチングするための技術

Info

Publication number
JP2001527160A
JP2001527160A JP2000525905A JP2000525905A JP2001527160A JP 2001527160 A JP2001527160 A JP 2001527160A JP 2000525905 A JP2000525905 A JP 2000525905A JP 2000525905 A JP2000525905 A JP 2000525905A JP 2001527160 A JP2001527160 A JP 2001527160A
Authority
JP
Japan
Prior art keywords
plasma processing
transition metal
processing chamber
containing layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000525905A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001527160A5 (https=
Inventor
オドネル・ロバート・ジェイ．
ゴールドスプリング・グレゴリー・ジェイ．
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2001527160A publication Critical patent/JP2001527160A/ja
Publication of JP2001527160A5 publication Critical patent/JP2001527160A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2000525905A 1997-12-19 1998-12-11 遷移金属含有層をエッチングするための技術 Pending JP2001527160A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/994,797 1997-12-19
US08/994,797 US6069035A (en) 1997-12-19 1997-12-19 Techniques for etching a transition metal-containing layer
PCT/US1998/026410 WO1999033086A1 (en) 1997-12-19 1998-12-11 Techniques for etching a transition metal-containing layer

Publications (2)

Publication Number Publication Date
JP2001527160A true JP2001527160A (ja) 2001-12-25
JP2001527160A5 JP2001527160A5 (https=) 2006-04-27

Family

ID=25541061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000525905A Pending JP2001527160A (ja) 1997-12-19 1998-12-11 遷移金属含有層をエッチングするための技術

Country Status (4)

Country Link
US (1) US6069035A (https=)
JP (1) JP2001527160A (https=)
KR (1) KR100595862B1 (https=)
WO (1) WO1999033086A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849153B2 (en) * 1998-04-16 2005-02-01 Siemens Aktiengesellschaft Removal of post-rie polymer on A1/CU metal line
US6821907B2 (en) * 2002-03-06 2004-11-23 Applied Materials Inc Etching methods for a magnetic memory cell stack
US6972265B1 (en) * 2002-04-15 2005-12-06 Silicon Magnetic Systems Metal etch process selective to metallic insulating materials
US20050164504A1 (en) * 2004-01-26 2005-07-28 Mirkarimi Laura W. Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices
JP4849881B2 (ja) * 2005-12-08 2012-01-11 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5694022B2 (ja) * 2011-03-22 2015-04-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028379A (ja) * 1988-06-28 1990-01-11 Anelva Corp ドライエッチング装置
JPH04107281A (ja) * 1990-08-27 1992-04-08 Nec Corp Ｆｅを含む物質のエッチング方法およびエッチング装置
JPH08222549A (ja) * 1995-02-16 1996-08-30 Sony Corp プラズマ処理装置およびプラズマ処理方法
JPH1088373A (ja) * 1996-08-05 1998-04-07 Siemens Ag 金属、金属酸化物及びそれらの混合物のプラズマ補助異方性エッチング方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4838994A (en) * 1987-06-26 1989-06-13 Siemens Aktiengesellschaft Method for structuring a copper and/or permalloy layer by means of dry etching
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
EP0386518B1 (en) * 1989-02-23 1999-06-09 Seiko Epson Corporation Etching method for compound semiconductors
US4923828A (en) * 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
US5318664A (en) * 1990-06-25 1994-06-07 General Electric Company Patterning of indium-tin oxide via selective reactive ion etching
US5304775A (en) * 1991-06-06 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
US5300187A (en) * 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
US5269878A (en) * 1992-12-10 1993-12-14 Vlsi Technology, Inc. Metal patterning with dechlorinization in integrated circuit manufacture
KR100322695B1 (ko) * 1995-03-20 2002-05-13 윤종용 강유전성캐패시터의제조방법
US5753567A (en) * 1995-08-28 1998-05-19 Memc Electronic Materials, Inc. Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma
US5674357A (en) * 1995-08-30 1997-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor substrate cleaning process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028379A (ja) * 1988-06-28 1990-01-11 Anelva Corp ドライエッチング装置
JPH04107281A (ja) * 1990-08-27 1992-04-08 Nec Corp Ｆｅを含む物質のエッチング方法およびエッチング装置
JPH08222549A (ja) * 1995-02-16 1996-08-30 Sony Corp プラズマ処理装置およびプラズマ処理方法
JPH1088373A (ja) * 1996-08-05 1998-04-07 Siemens Ag 金属、金属酸化物及びそれらの混合物のプラズマ補助異方性エッチング方法

Also Published As

Publication number Publication date
KR100595862B1 (ko) 2006-07-03
US6069035A (en) 2000-05-30
WO1999033086A1 (en) 1999-07-01
KR20010033102A (ko) 2001-04-25

Similar Documents

Publication Publication Date Title
US6090717A (en) High density plasma etching of metallization layer using chlorine and nitrogen
CN109219867B (zh) 蚀刻方法
CN101826435B (zh) 等离子蚀刻方法及等离子蚀刻装置
KR101029947B1 (ko) 플라즈마 에칭 성능 강화를 위한 방법
TWI731101B (zh) 蝕刻處理方法
KR102035890B1 (ko) 에칭 처리 방법
US6893893B2 (en) Method of preventing short circuits in magnetic film stacks
TW546737B (en) Method of plasma etching organic antireflective coating
CN101606234B (zh) 蚀刻方法及存储介质
US5772906A (en) Mechanism for uniform etching by minimizing effects of etch rate loading
US20040072443A1 (en) Method for plasma etching performance enhancement
US5883007A (en) Methods and apparatuses for improving photoresist selectivity and reducing etch rate loading
CN109755123A (zh) 等离子体蚀刻方法
KR101075045B1 (ko) 플라즈마 에칭 성능 강화를 위한 방법
TW201705265A (zh) 蝕刻方法
JP2001526461A (ja) 酸化窒化珪素と無機反射防止皮膜をエッチングするための方法
TWI722187B (zh) 蝕刻方法
JP6749749B2 (ja) 銅バリア膜をエッチングするための新規方法
TW201724252A (zh) 蝕刻方法
JP4351806B2 (ja) フォトレジストマスクを使用してエッチングするための改良技術
US5849641A (en) Methods and apparatus for etching a conductive layer to improve yield
US5952244A (en) Methods for reducing etch rate loading while etching through a titanium nitride anti-reflective layer and an aluminum-based metallization layer
JP2001160549A (ja) ドライエッチング方法
CN111223775A (zh) 蚀刻方法和基板处理装置
Pu Plasma etch equipment

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060306

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080311

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080610

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080715

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081111