JP2001527160A5 - - Google Patents
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- Publication number
- JP2001527160A5 JP2001527160A5 JP2000525905A JP2000525905A JP2001527160A5 JP 2001527160 A5 JP2001527160 A5 JP 2001527160A5 JP 2000525905 A JP2000525905 A JP 2000525905A JP 2000525905 A JP2000525905 A JP 2000525905A JP 2001527160 A5 JP2001527160 A5 JP 2001527160A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- transition metal
- processing chamber
- containing layer
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 description 60
- 229910052723 transition metal Inorganic materials 0.000 description 24
- 150000003624 transition metals Chemical class 0.000 description 24
- 238000005530 etching Methods 0.000 description 19
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/994,797 | 1997-12-19 | ||
| US08/994,797 US6069035A (en) | 1997-12-19 | 1997-12-19 | Techniques for etching a transition metal-containing layer |
| PCT/US1998/026410 WO1999033086A1 (en) | 1997-12-19 | 1998-12-11 | Techniques for etching a transition metal-containing layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001527160A JP2001527160A (ja) | 2001-12-25 |
| JP2001527160A5 true JP2001527160A5 (https=) | 2006-04-27 |
Family
ID=25541061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000525905A Pending JP2001527160A (ja) | 1997-12-19 | 1998-12-11 | 遷移金属含有層をエッチングするための技術 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6069035A (https=) |
| JP (1) | JP2001527160A (https=) |
| KR (1) | KR100595862B1 (https=) |
| WO (1) | WO1999033086A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849153B2 (en) * | 1998-04-16 | 2005-02-01 | Siemens Aktiengesellschaft | Removal of post-rie polymer on A1/CU metal line |
| US6821907B2 (en) * | 2002-03-06 | 2004-11-23 | Applied Materials Inc | Etching methods for a magnetic memory cell stack |
| US6972265B1 (en) * | 2002-04-15 | 2005-12-06 | Silicon Magnetic Systems | Metal etch process selective to metallic insulating materials |
| US20050164504A1 (en) * | 2004-01-26 | 2005-07-28 | Mirkarimi Laura W. | Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices |
| JP4849881B2 (ja) * | 2005-12-08 | 2012-01-11 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
| JP5694022B2 (ja) * | 2011-03-22 | 2015-04-01 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4838994A (en) * | 1987-06-26 | 1989-06-13 | Siemens Aktiengesellschaft | Method for structuring a copper and/or permalloy layer by means of dry etching |
| JPH0814032B2 (ja) * | 1988-06-28 | 1996-02-14 | 日電アネルバ株式会社 | ドライエッチング装置 |
| US5145554A (en) * | 1989-02-23 | 1992-09-08 | Seiko Epson Corporation | Method of anisotropic dry etching of thin film semiconductors |
| EP0386518B1 (en) * | 1989-02-23 | 1999-06-09 | Seiko Epson Corporation | Etching method for compound semiconductors |
| US4923828A (en) * | 1989-07-07 | 1990-05-08 | Eastman Kodak Company | Gaseous cleaning method for silicon devices |
| US5318664A (en) * | 1990-06-25 | 1994-06-07 | General Electric Company | Patterning of indium-tin oxide via selective reactive ion etching |
| JP2757546B2 (ja) * | 1990-08-27 | 1998-05-25 | 日本電気株式会社 | Ｆｅを含む物質のエッチング方法およびエッチング装置 |
| US5304775A (en) * | 1991-06-06 | 1994-04-19 | Mitsubishi Denki Kabushiki Kaisha | Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element |
| US5300187A (en) * | 1992-09-03 | 1994-04-05 | Motorola, Inc. | Method of removing contaminants |
| US5269878A (en) * | 1992-12-10 | 1993-12-14 | Vlsi Technology, Inc. | Metal patterning with dechlorinization in integrated circuit manufacture |
| JPH08222549A (ja) * | 1995-02-16 | 1996-08-30 | Sony Corp | プラズマ処理装置およびプラズマ処理方法 |
| KR100322695B1 (ko) * | 1995-03-20 | 2002-05-13 | 윤종용 | 강유전성캐패시터의제조방법 |
| US5753567A (en) * | 1995-08-28 | 1998-05-19 | Memc Electronic Materials, Inc. | Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma |
| US5674357A (en) * | 1995-08-30 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor substrate cleaning process |
| DE19631622A1 (de) * | 1996-08-05 | 1998-02-12 | Siemens Ag | Verfahren zum plasmaunterstützten anisotropen Ätzen von Metallen, Metalloxiden und deren Gemische |
-
1997
- 1997-12-19 US US08/994,797 patent/US6069035A/en not_active Expired - Lifetime
-
1998
- 1998-12-11 KR KR1020007006465A patent/KR100595862B1/ko not_active Expired - Lifetime
- 1998-12-11 JP JP2000525905A patent/JP2001527160A/ja active Pending
- 1998-12-11 WO PCT/US1998/026410 patent/WO1999033086A1/en not_active Ceased
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