KR100595862B1 - 전이금속 함유층 에칭방법 - Google Patents

전이금속 함유층 에칭방법 Download PDF

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Publication number
KR100595862B1
KR100595862B1 KR1020007006465A KR20007006465A KR100595862B1 KR 100595862 B1 KR100595862 B1 KR 100595862B1 KR 1020007006465 A KR1020007006465 A KR 1020007006465A KR 20007006465 A KR20007006465 A KR 20007006465A KR 100595862 B1 KR100595862 B1 KR 100595862B1
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South Korea
Prior art keywords
transition metal
plasma processing
containing layer
processing chamber
etching
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KR1020007006465A
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English (en)
Korean (ko)
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KR20010033102A (ko
Inventor
로버트제이. 오도넬
그레고리제이. 골드스프링
Original Assignee
램 리서치 코포레이션
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Publication of KR20010033102A publication Critical patent/KR20010033102A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1020007006465A 1997-12-19 1998-12-11 전이금속 함유층 에칭방법 Expired - Lifetime KR100595862B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/994,797 1997-12-19
US8/994,797 1997-12-19
US08/994,797 US6069035A (en) 1997-12-19 1997-12-19 Techniques for etching a transition metal-containing layer
PCT/US1998/026410 WO1999033086A1 (en) 1997-12-19 1998-12-11 Techniques for etching a transition metal-containing layer

Publications (2)

Publication Number Publication Date
KR20010033102A KR20010033102A (ko) 2001-04-25
KR100595862B1 true KR100595862B1 (ko) 2006-07-03

Family

ID=25541061

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007006465A Expired - Lifetime KR100595862B1 (ko) 1997-12-19 1998-12-11 전이금속 함유층 에칭방법

Country Status (4)

Country Link
US (1) US6069035A (https=)
JP (1) JP2001527160A (https=)
KR (1) KR100595862B1 (https=)
WO (1) WO1999033086A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849153B2 (en) * 1998-04-16 2005-02-01 Siemens Aktiengesellschaft Removal of post-rie polymer on A1/CU metal line
US6821907B2 (en) * 2002-03-06 2004-11-23 Applied Materials Inc Etching methods for a magnetic memory cell stack
US6972265B1 (en) * 2002-04-15 2005-12-06 Silicon Magnetic Systems Metal etch process selective to metallic insulating materials
US20050164504A1 (en) * 2004-01-26 2005-07-28 Mirkarimi Laura W. Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices
JP4849881B2 (ja) * 2005-12-08 2012-01-11 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP5694022B2 (ja) * 2011-03-22 2015-04-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658820A (en) * 1995-03-20 1997-08-19 Samsung Electronics Co., Ltd. Method for manufacturing ferroelectric thin-film capacitor
US5674357A (en) * 1995-08-30 1997-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor substrate cleaning process

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4838994A (en) * 1987-06-26 1989-06-13 Siemens Aktiengesellschaft Method for structuring a copper and/or permalloy layer by means of dry etching
JPH0814032B2 (ja) * 1988-06-28 1996-02-14 日電アネルバ株式会社 ドライエッチング装置
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
EP0386518B1 (en) * 1989-02-23 1999-06-09 Seiko Epson Corporation Etching method for compound semiconductors
US4923828A (en) * 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
US5318664A (en) * 1990-06-25 1994-06-07 General Electric Company Patterning of indium-tin oxide via selective reactive ion etching
JP2757546B2 (ja) * 1990-08-27 1998-05-25 日本電気株式会社 Ｆｅを含む物質のエッチング方法およびエッチング装置
US5304775A (en) * 1991-06-06 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
US5300187A (en) * 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
US5269878A (en) * 1992-12-10 1993-12-14 Vlsi Technology, Inc. Metal patterning with dechlorinization in integrated circuit manufacture
JPH08222549A (ja) * 1995-02-16 1996-08-30 Sony Corp プラズマ処理装置およびプラズマ処理方法
US5753567A (en) * 1995-08-28 1998-05-19 Memc Electronic Materials, Inc. Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma
DE19631622A1 (de) * 1996-08-05 1998-02-12 Siemens Ag Verfahren zum plasmaunterstützten anisotropen Ätzen von Metallen, Metalloxiden und deren Gemische

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658820A (en) * 1995-03-20 1997-08-19 Samsung Electronics Co., Ltd. Method for manufacturing ferroelectric thin-film capacitor
US5674357A (en) * 1995-08-30 1997-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor substrate cleaning process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. of the electrochemical society(vol.136, no.5, 5월 1989, pp.1474-1476 *

Also Published As

Publication number Publication date
JP2001527160A (ja) 2001-12-25
US6069035A (en) 2000-05-30
WO1999033086A1 (en) 1999-07-01
KR20010033102A (ko) 2001-04-25

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